N-type silicon

Semiconductor-electrolyte interface, photo generation and loss mechanism, 458 Semiconductor-oxide junctions, 472 Semiconductor-solution interface, and the space charge region, 484 Sensitivity, of electrodes, under photo irradiation, 491 Silicon, n-type... 

Sanyo s HIT heterojunction with intrinsic thin-layer) technology combines crystalline and amorphous silicon. n-Type crystalline silicon wafers have layers of intrinsic and doped amorphous silicon applied to the front and rear. Contacts are made via transparent conducting oxide (TCO). 

IBAD experiments were performed using a resonance vacuum arc ion source. This type of ion source with desirable metal (Me) electrodes was used to produce a mixture of neutral Me and Me+ ion species. Substrate plates (silicon and rubber) were floated to a negative potential with respect to the source of 3 keV to accelerate the ion species. The deposition and irradiation of Ti, Zr and Mo coatings have been accomplished simultaneously on silicon (n-type, 200 Q cm) and on rubber (GOST V-14) samples. The base pressure of the target chamber was 10 2 Pa. The relative ratio of ions/neutral atoms and deposition rates were found to be 0.2-0.4 and 0.3-0.4 nm/min in different sets of experiment. 

B.5.2 Macroporous Silicon n-Type silicon (low, medium, and high) [67, 69-71, 99, 100] and very low-doped p-type (<5 cm) are made macroporous... 

The target of a silicon vidicon tube is shown in Figure 6-14. It is composed of an array of p-type semiconductor areas insulated from one another and formed over an n-type silicon base. The spaces between the p-type areas are coated with silicon dioxide to shield the silicon n-type base from the electron beam. 

An electron beam is focused on the surface of the mosaic of p-type semiconductors and, by proper electronic control, scans the vidicon tube target. The electron beam charges each p-type cell to a negative potential. A positive voltage is applied to the silicon n-type base to create a depletion zone. Each diode thus acts as a capacitor, storing electrical energy. 

Chamard V, Dolino G, Lerondel G, Setzu S, Physica B (1998) X-ray diffraction and reflectometry studies of porous silicon n-type layers and holographic gratings 248 101-103... 

Silicon n-type Doped with 5x10 Sb 9.81 Diagonals along... 

Using this temperature difference method, we can obtain semiconducting crystals by adding a small amount of a suitable impurity to the solvent (184,201). To make a pn-junction crystal, two compressions were carried out. In the first compression, a p-type crystal was made by adding a small amount of beryllium (p-type dopant) to the solvent. In the second compression, the p-type crystal was located at the low-temperature end of the growth cell as a seed crystal. By adding silicon (n-type dopant) to the solvent, an n-type crystal was grown on top of the p-type seed. A functional pn crystal was thus fabricated (184,199). 

FigMre 18.17 Electron concentration versus teii rera-tnre for silicon (n-type) that has been doped with of a donor impurity and for intrinsic silicon (dashed Une). Freeze-out, extrinsic, and intrinsic temperature regimes are noted on this plot. 

The deposition of amoriDhous hydrogenated silicon (a-Si H) from a silane plasma doped witli diborane (B2 Hg) or phosphine (PH ) to produce p-type or n-type silicon is important in tlie semiconductor industry. The plasma process produces films witli a much lower defect density in comparison witli deposition by sputtering or evaporation. 

The heart of the energy-dispersive spectrometer is a diode made from a silicon crystal with lithium atoms diffiised, or drifted, from one end into the matrix. The lithium atoms are used to compensate the relatively low concentration of grown-in impurity atoms by neutralizing them. In the diffusion process, the central core of the silicon will become intrinsic, but the end away from the lithium will remain p-type and the lithium end will be n-type. The result is a p-i-n diode. (Both lithium-... 

A photovoltaic cell (often called a solar cell) consists of layers of semiconductor materials with different electronic properties. In most of today s solar cells the semiconductor is silicon, an abundant element in the earth s crust. By doping (i.e., chemically introducing impurity elements) most of the silicon with boron to give it a positive or p-type electrical character, and doping a thin layer on the front of the cell with phosphorus to give it a negative or n-type character, a transition region between the two types... 

The silicon diode (photodiode) detector consists of a strip of p-type silicon on the surface of a silicon chip (n-type silicon). By application of a biasing potential with the silicon chip connected to the positive pole of the biasing source, electrons and holes are caused to move away from the p-n junction. This creates a depletion region in the neighbourhood of the junction which in effect becomes a capacitor. When light strikes the surface of the chip, free... 

Figure 34. PMC lifetime map of n-type silicon/polymer (poly(epichlorhydrine-co-ethylenoxide-co-allyl-glycylether plus iodide) junction at -10 V potential (mostly dropping across the polymer layer), after Li+ insertion has changed the silicon interface. The statistical evaluation shows the drastic drop in the PMC lifetime. For color version please see color plates opposite p. 453.

Figure 35. Dynamic change of lifetime in an n-type silicon/polymer (poly(epichlorhydrine-co-elhylenoxide-co-allyl-glycylether plus iodide) junction during a potential sweep. The arrows show the direction of sweep (0.25 V s" ). A shoulder in the accumulation region and a peak in the depletion region of silicon are clearly seen.

Figure 36. Microwave conductivity transients of an n-type silicon/polymer (poly(epichlorhydrine-co-ethylenoxide-co-allyl-glycylether plus iodide) junction at 0 and -5V.

Intensity-modulated photocurrent spectroscopy has been used in combination with microwave reflectivity measurements to investigate hydrogen evolution at a p-type silicon45 and an n-type silicon.46 The measurement of amplitude and phase under harmonic generation of excess carriers, performed by Otaredian47 on silicon wafers in an attempt to separate bulk and surface recombination, should also be mentioned here. 

Polymer lifetime, mapped for n-type silicon in contact with the polymer electrolyte, 497... 

Gallium arsenide is a semiconducting material. If we wish to modify the sample by replacing a small amount of the arsenic with an element to produce an n-type semiconductor, which element would we choose selenium, phosphorus, or silicon Why ... 

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