Silicon dioxide enhancement

The other platform is dielectrics, for example, silicon dioxide, silicon nitride, silicon oxynitride, tantalum pentoxide, and titanium dioxide. They can be deposited by various methods, such as plasma-enhanced chemical vapor deposition, thermal evaporation, electron-beam evaporation, and sputtering. There are a number of dielectrics with refractive indices ranging from 1.45 to 2.4, facilitating diverse waveguide designs to satisfy different specification. Dielectrics have two other... 

According to Coimbra et solvents play a central role in the majority of chemical and pharmaceutical industrial processes. The most used method to obtain artemisinin (1) from A. annua is through the use of organic solvents such as toluene, hexane, cyclohexane, ethanol, chloroform and petroleum ether. Rodrigues et al described a low-cost and industrial scaled procedure that enables artemisinin (1) enhanced yields by using inexpensive and easy steps. Serial extraction techniques allowed a reduction of 65% in solvent consumption. Moreover, the use of ethanol for compound extraction is safer when compared to other solvents. Flash column pre-purification employing silicon dioxide (Zeosil ) as stationary phase provided an enriched artemisinin (1) fraction that precipitated in hexane/ethyl acetate (85/15, v/v) solution. These results indicate the feasibility of producing artemisinin (1) at final cost lowered by almost threefold when compared to classical procedures. 

Dielectric Deposition Systems. The most common techniques used for dielectric deposition include chemical vapor deposition (CVD), sputtering, and spin-on films. In a CVD system thermal or plasma energy is used to decompose source molecules on the semiconductor surface (189). In plasma-enhanced CVD (PECVD), typical source gases include silane, SiH4, and nitrous oxide, N20, for deposition of silicon nitride. The most common CVD films used are silicon dioxide, silicon nitride, and silicon oxynitrides. 

Silicon Dioxide. Si02 layers produced by PECVD are useful for intermetal dielectric layers and mechanical or chemical protection and as diffusion masks and gate oxides on compound-semiconductor devices. The films are generally formed by the plasma-enhanced reaction of SiH4 at 200-300 °C with nitrous oxide (N20), but CO, C02, or 02 have also been used (238-241). Other silicon sources including tetramethoxysilane, methyl dimethoxysilane, and tetramethylsilane have also been investigated (202). Diborane or phosphine can be added to the deposition atmosphere to form doped oxide layers. 

The properties of silicon dioxide films also depend upon all plasma deposition parameters. Temperature is the critical parameter (240), although the compressive stress level varies with rf frequency (237, 240). Film topography can be varied during deposition by altering ion bombardment conditions (242, 243). In particular, the incorporation of Ar in the deposition atmosphere enhances sputtering and thus promotes conformal step coverage during film formation (243). 

A new solid state chemical sensor for sulfur dioxide utilizing a sodium sulfate/rare earth sulfates/silicon dioxide electrolyte has been developed. The addition of rare earth sulfates and silicon dioxide to the sodium sulfate electrolyte was found to enhance the durability and electrical conductivity of the electrolyte. The electrolyte exhibits a Nernstian response in the range of SC gas concentrations from 30 ppm to 1 %. 

In the present chapter, we will review the nature of plasma-enhanced CVD (PECVD) films for a variety of applications. We will look at dielectrics (silicon nitride, silicon dioxide), semiconductors (polysilicon, epi silicon) and metals (refractory metals, refractory metal silicides, aluminum). There are many other important films (i.e., amorphous silicon for solar cells and TiN for tool harden-... 

Earlier, we reviewed silicon dioxide (thermal) films deposited with added phosphorus to serve as a getter for mobile ion impurities, as a final passivation film. Plasma-enhanced silicon nitride can also be doped with phosphorus.6 Some of the film characteristics have been reviewed, and it was found that the films with 2 to 3% P had the best electrical quality. No measurements of stress or H2 content were reported, so it is not clear that these would be use-able films. 

The next three chapters review the deposition of thermally-induced dielectric films (Chapter 3) and metallic conducting films (Chapter 4), as well as plasma-enhanced films of either type (Chapter 5). The many chemical systems employed to create these films are considered, and the nature of the resulting films is presented. Films studied are silicon dioxide, silicon nitride, polysilicon, epitaxial silicon, the refractory metal silicides, tungsten and aluminum. 

Deposition of a metallic film onto the silicon dioxide surface requires a good adhesion between the two layers. An enhancement of the adhesion can be accomplished by first depositing a very thin layer of titanium or chromium, 50-100 A in thickness, then the desired metallic film. 

In the following, a silicon nitride layer was deposited as the gate dielectric on a thermally oxidised silicon wafer. The nitride layer was re-oxidised to enhance the electrical stability. The silicon dioxide below the nitride film adopted the function of a buffer layer to reduce mechanical stress between the silicon and silicon nitride due to different thermal coefficients of expansion. To deposit the dielectric film, ammonia gas and triethylsilane were put into the process tube in a ratio of 1 5, at 800 °C and at a process pressure of 0.3 mbar. The thickness of the deposited dielectric film was about 75 nm in total. 

A method for enhancing adhesion of resist materials onto surfaces of silicon dioxide and other semiconducting substrates was invented by Collins and Deverse, and involves subjecting the surface to an atmosphere containing the... 

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