Silicon carbide thin films

Daves, W., Krauss, A., Behnel, N., Haublein, V., Bauer, A., Frey, L., 2011. Amorphous silicon carbide thin films (a-SiC H) deposited by plasma-enhanced chemical vapor deposition as protective coatings for harsh environment applications. Thin Solid Films 519,5892—5898. http //dx.doi.Org/10.1016/j.tsf.2011.02.089. 

SR Nutt, DJ Smith, HJ Kim, RE Davis. Interface structures in beta-silicon carbide thin films. Appl Phys Lett 50 203, 1987. 

TETRA(SILYL)METHANE, (H3Si)4C, A VOLATILE CARBOSILANE FOR THE CHEMICAL VAPOR DEPOSITION OF AMORPHOUS SILICON CARBIDE THIN FILMS... 

This work reports the development of a polymeric/sol-gel route for the deposition of silicon carbide and silicon oxycarbide thin films for applications such as heat-, corrosion-, and wear-resistant coatings, coatings on fibers for controlling the interaction with the matrix in ceramic matrix composites, or films in electronic and optoelectronic devices. This method, in which the pre-ceramic films are converted to a ceramic coating either by a conventional high temperature annealing or by ion irradiation, is alternative to conventional methods such as chemical or physical vapor deposition (CVD, PVD), molecular beam epitaxy, sputtering, plasma spray, or laser ablation, which are not always practical or cost efficient. 

It is thus clear that the processing atmosphere strongly affects the resulting composition and microstructure of both SiOC and SiC coatings, and that vacuum is the only environment which allows the synthesis of both silicon carbide and silicon oxycarbide thin films [51],... 

P. Colombo, T. E. Paulson, and C. G. Pantano, Atmosphere effects in the processing of silicon carbide and silicon oxycarbide thin films and coatings, J. Sol-Gel. Sci. Technol. 1994,2,601-604. 

T. E. Paulson, Polymer processing of silicon (oxy)carbide thin films and microcomposite coatings, M.Sc. Thesis, The Pennsylvania State University, University Park, PA, 1994. 

Davis, R., Silicon Carbide and Diamond Semiconductor Thin Films, M/w. Ceram. Soc. Bull, 72(7) 99-106(July 1993)... 

CVD is a maj or process in the production of thin films of all three categories of electronic materials semiconductors, conductors, and insulators. In this chapter, the role of CVD in the fabrication of semiconductors is reviewed. The CVD production of insulators, conductors, and diffusion barriers is reviewed in the following chapter. The major semiconductor materials in production or development are silicon, germanium, ni-V and II-VI compounds, silicon carbide, and diamond. 

Apart from the reactions described above for the formation of thin films of metals and compounds by the use of a solid source of the material, a very important industrial application of vapour phase transport involves the preparation of gas mixtures at room temperature which are then submitted to thermal decomposition in a high temperature furnace to produce a thin film at this temperature. Many of the molecular species and reactions which were considered earlier are used in this procedure, and so the conclusions which were drawn regarding choice and optimal performance apply again. For example, instead of using a solid source to prepare refractory compounds, as in the case of silicon carbide discussed above, a similar reaction has been used to prepare titanium boride coatings on silicon carbide and hafnium diboride coatings on carbon by means of a gaseous input to the deposition furnace (Choy and Derby, 1993) (Shinavski and Diefendorf, 1993). 

The adsorption of hydrocarbon molecules on Si surfaces is an interesting topic of study under various viewpoints. For example, a thin hydrocarbon film coating Si may be applied as a low dielectric in microelectronics and may passivate the surface if covalent bonds are formed between Si atoms and the adsorbate species. Further, unsaturated hydrocarbons play an important role as precursor species for chemical vapor deposition (CVD) of diamond - like films on the Si surface, and of silicon carbide (SiC). 

Finally, it can he added that very thin nickel films are used as seed layers for the growth of fullerenes and of silicon carbide SiC whiskers, and that C/Ni multilayers are used as x-ray mirrors. ... 

Numerous ceramics are deposited via chemical vapor deposition. Oxide, carbide, nitride, and boride films can all be produced from gas phase precursors. This section gives details on the production-scale reactions for materials that are widely produced. In addition, a survey of the latest research including novel precursors and chemical reactions is provided. The discussion begins with the mature technologies of silicon dioxide, aluminum oxide, and silicon nitride CVD. Then the focus turns to the deposition of thin films having characteristics that are attractive for future applications in microelectronics, micromachinery, and hard coatings for tools and parts. These materials include aluminum nitride, boron nitride, titanium nitride, titanium dioxide, silicon carbide, and mixed-metal oxides such as those of the perovskite structure and those used as high To superconductors. 

Bulk silicon carbide has the zincblende crystal structure and has been studied, not in single crystal form, but as a micron depth thin film created by chemical vapor deposition on a Si(100) substrate (Powers et al., 1992). I vo C-terminated c(2x2) structures have been studied by LEED, one with, and one without exposure, to C2II4 following cleaning. In both cases, the surface is terminated with coplanar C-C dimers which bridge the second layer Si sites. The Si rich surface terminates with an asymmetric Si dimer (Powers ct al., 1992). 

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