Silicon-based negative resist

Preparation and Resolution Characteristics of a Novel Silicone-Based Negative Resist... 

We have developed a new silicone based negative resist (SNR) by introducing the chloromethyl group into polydiphenylsiloxane. SNR has a high Tg (170 C), good electron beam sensitivity and excellent durability to 02 RIE (9). In this paper we describe the SNR preparation and characteristics, and demonstrate a high resolution of 2LR system using this resist. 

Figure 1. Structure of silicone based negative resist (SNR).

A new silicone-based negative resist (SNR) for two layer resist systems was designed and prepared. It showed excellent dry etching durability to 02 RIE, high sensitivity to electron beam, X-ray and deep UV, and high resolution. Two layer resist with SNR/AZ resist is very effective to achieve submicron patterns with high aspect ratio, and will be used for the fabrication of submicron patterns over topography such as the metallization of electrode patterns in the last step of VLSI fabrication process. 

Characteristics of a l vo-Layer Resist System Using Silicone-Based Negative Resist for Electron-Beam Litht raphy... 

Acid-catalyzed silanol condensation to form insoluble networks has been also utilized in the design of aqueous base developable negative resist systems [419]. An aqueous base soluble silicone polymer was synthesized by a sol-gel reaction of a mixture of phenyltrimethoxysilane and 2-(3,4-epoxycyclohexyl)-ethyltrimethoxysilane. This polymer contained a high concentration of silanol OH groups and thus was soluble in aqueous base. 

Although the silicon micromachining process is well developed, extensive use of costly clean-room instrumentation is required. Thus, alternative and simpler template construction approaches are being pursued. One such method utilizes SU-8, an epoxy-based negative photoresist, which has excellent chemical resistance and mechanical properties. Patterned SU-8 is being applied increasingly in making microstructures for templates in microchip production... 

The first step involving the preparation of master is spin coating of silicon wafer with SU-8 negative resist. Subsequently, UV exposure is carried out with a clear field mask. This is followed by the development of SU-8 master. Glass posts are placed on SU-8 master to define the inlets and reservoirs. PDMS is mixed with prepolymers having weight ratio of the base and... 

BN films were deposited on silicon (100) wafer with resistivity (5-8Q cm) by a magnetron sputtering system. Sputtering target used here was a hot-pressed h-BN with 4N purity. The substrate was applied with a negative bias at 180V and 300V, respectively. Deposition was carried out with a base pressure of 2x 1 O Pa and mixed... 

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