Semiconductors, organometallic vapor phase

G. B. Stringfellow, Organometallic Vapor-Phase Epitaxial Growth of III-V Semiconductors... 

The development of the neutron depth profiling technique has been motivated by the importance of boron in both optical and microelectronic materials. Boron is widely used as a p-type dopant in semiconductor device fabrication and in the insulating oxide barriers applied as an organometallic or in vapor phase deposition glasses. 

Zinc oxide, ZnO, is a p-type semiconductor and shows piezoelectric properties which make this material useful for microsensor devices and micromachined actuators [69, 70]. The Al-doped material is used as a transparent electrode [71]. Other applications of ZnO include gas sensors [72], solar cell windows [73] and surface acoustic devices [74]. The organometallic compounds diethylzinc, ZnEt2 [75-77], and dimethylzinc, ZnMe2 [78], are frequently used as precursors for the deposition of zinc oxide. However, these reagents are highly pyrophoric and tend to react prematurely in the presence of water or oxygen. If ZnEt2 is combined with an alcohol in the reaction chamber, stable intermediates, presumably zinc alkoxides and/or alcohol adducts, are formed in the vapor-phase [79]. These compounds are more stable than dialkyl zinc rea-... 

The cryochemical vapor deposition synthesis of metal-polymer films (from the gaseous state to the solid polymer one, bypassing the liquid phase) allows the production of both new organometallic structures and new valuable composites with high concentrations of nano-sized metal or semiconductor particles. 

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