Semiconductor contaminants

Certain materials, most notably semiconductors, can be mechanically cleaved along a low-mdex crystal plane in situ in a UFIV chamber to produce an ordered surface without contamination. This is done using a sharp blade to slice tire sample along its preferred cleavage direction. For example. Si cleaves along the (111) plane, while III-V semiconductors cleave along the (110) plane. Note that the atomic structure of a cleaved surface is not necessarily the same as that of the same crystal face following treatment by IBA. 

Dielectric constants of metals, semiconductors and insulators can be detennined from ellipsometry measurements [38, 39]. Since the dielectric constant can vary depending on the way in which a fihn is grown, the measurement of accurate film thicknesses relies on having accurate values of the dielectric constant. One connnon procedure for detennining dielectric constants is by using a Kramers-Kronig analysis of spectroscopic reflectance data [39]. This method suffers from the series-tennination error as well as the difficulty of making corrections for the presence of overlayer contaminants. The ellipsometry method is for the most part free of both these sources of error and thus yields the most accurate values to date [39]. 

Trace contaminants in the phosphoms may be deterrnined by oxidation of the phosphoms by various techniques. The metals are then deterrnined by an inductively coupled plasma spectrophotometer or by atomic absorption. The most important trace metal is arsenic, which must be reduced in concentration for food-grade products. Numerous other trace metals have become important in recent years owing to the specifications for electronic-grade phosphoric acid requited by the semiconductor industry (see Electronic materials Semiconductors). Some trace elements must be reduced to the low ppb range in phosphoric acid to comply. 

Electrically Functional. Refractory coatings are used in semiconductor devices, capacitors, resistors, magnetic tape, disk memories, superconductors, solar ceUs, and diffusion barriers to impurity contamination from the substrate to the active layer. 

For example, chloride and duoride ions, even in trace amounts (ppm), could cause the dissolution of aluminum metallization of complimentary metal oxide semiconductor (CMOS) devices. CMOS is likely to be the trend of VLSI technology and sodium chloride is a common contaminant. The protection of these devices from the effects of these mobile ions is an absolute requirement. The use of an ultrahigh purity encapsulant to encapsulate the passivated IC is the answer to some mobile ion contaminant problems. 

The degree of surface cleanliness or even ordering can be determined by REELS, especially from the intense VEELS signals. The relative intensity of the surface and bulk plasmon peaks is often more sensitive to surface contamination than AES, especially for elements like Al, which have intense plasmon peaks. Semiconductor surfaces often have surface states due to dangling bonds that are unique to each crystal orientation, which have been used in the case of Si and GaAs to follow in situ the formation of metal contacts and to resolve such issues as Fermi-level pinning and its role in Schottky barrier heights. 

Three common uses of RBS analysis exist quantitative depth profiling, areal concentration measurements (atoms/cm ), and crystal quality and impurity lattice site analysis. Its primary application is quantitative depth profiling of semiconductor thin films and multilayered structures. It is also used to measure contaminants and to study crystal structures, also primarily in semiconductor materials. Other applications include depth profilii of polymers, high-T superconductors, optical coatings, and catalyst particles. ... 

Most of the transition elements that are of primary interest in the semiconductor industry such as Fe, Cr, Mn, Co, and Ni, can be analyzed with very low detection limits. Second to its sensitivity, the most important advantage of NAA is the minimal sample preparation that is required, eliminating the likelihood of contamination due to handling. Quantitative values can be obtained and a precision of 1-5% relative is regularly achieved. Since the technique measures many elements simultaneously, NAA is used to scan for impurities conveniently. 

A SSIMS spectrum, like any other mass spectrum, consists of a series of peaks of dif ferent intensity (i. e. ion current) occurring at certain mass numbers. The masses can be allocated on the basis of atomic or molecular mass-to-charge ratio. Many of the more prominent secondary ions from metal and semiconductor surfaces are singly charged atomic ions, which makes allocation of mass numbers slightly easier. Masses can be identified as arising either from the substrate material itself from deliberately introduced molecular or other species on the surface, or from contaminations and impurities on the surface. Complications in allocation often arise from isotopic effects. Although some elements have only one principal isotope, for many others the natural isotopic abundance can make identification difficult. 

Metrology and contamination analysis in particular have been decisive factors for profitable semiconductor production [4.47]. Semiconductor applications of TXRF go back to the late nineteen-eighties and were introduced by Eichinger et al. [4.48, 4.49]. Because of its high sensitivity, wide linear range, facile spectrum deconvolution, and... 

In some cases, the parts to be coated (such as semiconductor silicon wafers) are stacked vertically. This minimizes particle contamination and considerably increases the loading capacity (as opposed to horizontal loading). 

The Cluster Tool Concept. A recent trend in semiconductor equipment is the integration of two or more functions, such as CVD, PVD, etching, stripping, or rapid thermal processing, in one piece of equipment the so-called cluster tool. A continuous vacuum can be maintained, a feature which reduces the handling and contamination problems, increases the overall throughput, improves the process control, and generally lowers the cost. 

Elements dissolved in boron influence its crystal structure. Dissolved impurities also influenee the physical and chemical properties of boron, especially the electrical properties, because boron is a semiconductor. Preparation of solid solutions in jS-rh boron requires a careful choice of crucible material. To avoid contamination, boron nitride or a cold, coinage-metal crucible should be used or the levitation or floating-zone melting techniques applied. 

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