Semiconducting composite materials

Recent developments in rotary atomization include the use of semiconductive composites (qv) for the rotary cup permitting the constmction of a unit that does not produce an ignition spark when brought close to a grounded workpiece yet has the transfer efficiencies associated with a rotary atomizer. In addition, the use of the semiconductive material softens the electrostatic field and results in less edge buildup and better penetration into recess areas. Other systems use electronic means to effectively prevent arcing to grounded surfaces. 

The surface of a material exposed to the environment experiences wear, corrosion, radiation, electrical, or magnetic fields and other phenomena. It must have the properties needed to withstand the environment or to provide certain desirable properties, such as reflectivity, semiconductivity, high thermal conductivity, or erosion resistance. Depositing a coating on a substrate produces a composite material and, as such, allows it to have surface property, which can be entirely different from those of the bulk material. 

A fiber or textile fabric prepared from insulating fiber materials is coated with an ICP polymer from a dilute solution or through interfacial polymerization techniques to yield a composite material with semiconducting surface conductivity. 

Electrical and Electronic Applications. Silver neodecanoate [62804-19-7] has been used in the preparation of a capacitor-end termination composition (110), lead and stannous neodecanoate have been used in circuit-board fabrication (111), and stannous neodecanoate has been used to form patterned semiconductive tin oxide films (112). The silver salt has also been used in the preparation of ceramic superconductors (113). Neodecanoate salts of barium, copper, yttrium, and europium have been used to prepare superconducting films and patterned thin-fHm superconductors. To prepare these materials, the metal salts are deposited on a substrate, then decomposed by heat to give the thin film (114—116) or by a focused beam (electron, ion, or laser) to give the patterned thin film (117,118). The resulting films exhibit superconductivity above Hquid nitrogen temperatures. 

The majority of important semiconducting materials are isoelectronic with elemental silicon. Important semiconductor materials include the III-V (13-15) materials such as GaAs or InP, and II-VI (12-16) materials such as CdS or ZnSe (Table 1). These compound semiconductors are most often formed by combining elements displaced on either side of silicon by one place (i.e., Ill = Ga or In and V = N or As for a III-V material) or two places (i.e., II = Zn or Cd and VI = S or Se for a II-VI material) in the periodic table. Other materials are of specialist importance, especially ternary materials such as CuInE2 (E = S and Se), which find applications in solar cell technologies, as do materials of III-VI composition such as InxS, although their properties are often complicated by the potential for the formation of a wide range of similar phases. 

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