Resist development methods

The single-wafer puddle process, operating in an automatic continuous mode in a track system, is now the most commonly used method for resist development. It involves an initial dispense of the developer on each wafer, forming a puddle that covers the entire wafer surface for a period of time on the order of 30-75 seconds, following which the developer is rinsed off with deionized water. Additional 

Physics of Semiconductor Devices, 2nd ed.. Chapter 7, John Wiley Sons, Hoboken, NJ (1981). 

Dammel, Diazonaphthoquinone based Resists, p. 112, SPIE Press, Belhngham, WA (1993). ibid. 

---

A layman s explanation of what chemical engineers do includes, construct synthetic fibers that make our clothes more comfortable and water resistant ... develop methods to mass produce drugs, making them more affordable ... create safer, more efficient methods of refining petroleum products, making energy and chemical sources more productive and cost effective (AIChE). 

It should be also mentioned that an increase of activated carbon s specific surface (over activation) always leads to increase of its specific resistance. Different methods of obtaining activated carbon with an optimized volumetric structure were developed [2, 3], but they have not yet found industrial application. 

IQiowledge of parameters such as reactivity ratios, is necessary for synthesis of polymer based resists, and an accurate method of analysis should be useful in various areas associated with resist development such as quality control. Raman spectroscopy provides a convenient, absolute, nondestructive method for compositional analysis of polymer systems which, if an internal standard is present, does not require standards of known composition or ancillary calibration curves. The accuracy, with appropriate selection of experimental conditions such as slit width and integration time, is limited only by the instrumentation. 

The criterion used at TCC-RMD to detect the detonation is to measure the velocity of the detonation wave. The constant current resistance wire method, originally developed at the U.S. Naval Ordnance Laboratory (7), is the technique used. This method depends on the high degree of ionization existing in the reaction zone of a detonation. The advancing detonation front completes the circuit between a central resistance wire and another conductor, which may be the metal test container or a separate wire, maintained at ground potential. The method provides a permanent record of a complete and accurate history of a detonation as it passes through a container of any size or shape. Needless... 

Development. Resist development is a critical step in lithography, because it exerts great influence on pattern quality. The traditional development method uses a liquid developer solution that preferentially dissolves either the exposed region (positive resists) or the unexposed region (negative resists). Development can be carried out by either spray or immersion tech-... 

The micro mixer was fabricated by UV lithography of SU-8 [54], Two lithography masks were employed, one for the inlet and outlet channels and sidewalls and the other for making the array of micro nozzles. A non-conventional tilted lithographic method was used. A thick layer of SU-8 was exposed at 45° and -45° as well as other angles. A special resist development technique for the small and deep nozzle structures also had to be explored. 

Menon and Landau [52] developed a model to describe transient diffusion and migration in stagnant binary electrolytes. Nonuniformity at a partially masked cathode was found to increase during electrolysis as the diffusion resistance develops. The calculations were done using an alternating-direction implicit (ADI) finite difference method. 

The third class of dry-developable resists involves heating the exposed resist films in a development step. This development method does not require expensive etching tools, is therefore economical, and could alleviate the potential problem of exposure tool contamination associated with the self-developing resist systems. Many of the plasma-developable resist systems involving a relief-bake step, as discussed in Section 3.2.4.1, have the thermal development characteristics to a certain extent. In the thermally developable resist scheme, development is minimal during irradiation but completed to the substrate upon postbaking. 

One way of measuring the solids concentration, similar to that used by previous workers, is to relate the field circuit current change to the solids concentration. This method has a serious disadvantage because the field circuit current depends on both the slurry resistivity and the polarization resistance developed on the surfaces of the field electrodes. This polarization resistance is velocity dependent. This method yields calibration curves that are functions of velocity (59). 

The one perspective field of researches for a probe nanotechnology is a development of carbon-based electronic elements. Carbon has found wide application in electronics and nuclear technology because of high thermal and radiation resistance. The methods of conventional planar microelectronics can be combined with probe technology for production of totally integrated carbon devices. 

---