Reactive ions

Janes J 1993 Mass seiected ion anguiar impact energy distributions at the powered eiectrode in CF reactive-ion etching J. Appl. Phys. 74 659-67... 

Figure C2.18.2. Schematic representations of various experimentai configurations for piasma etching, (a) Reactive ion etching (RIE). (b) Eiectron cyciotron resonance etching (ECR). (c) Chemicaiiy assisted ion beam etching (CAIBE). The configurations are described in tire text.

Barone M E and Graves D B 1995 Molecular dynamics simulations of direct reactive ion etching of silicon by fluorine and chlorine J. Appi. Phys. 78 6604-15... 

Hanson D E, Voter A F and Kress J D 1997 Molecular dynamics simulation of reactive Ion etching of SI by energetic Cl Ions J. Appl. Phys. 82 3552-9... 

Formation of reactive ions (CH," ) from methane (CH4) reagent gas and their reaction with sample molecules (M) to form protonated molecular ions [M + Hp. 

Some types of reagent gases and their reactive ions. 

Reactive extrusion Reactive groups Reactive ion etching (RIE)... 

Finally, the metallisation layer usually requires patterning, which can be done by reactive ion etching (RIE) or back-sputtering. The two processes are similar. In both techniques accelerated ions hit the substrate and forcibly detach atoms or molecules from the surface. RIE uses reactive gases such as chlorine, Cl or trichlorofluoromethane [75-69-4] CCl E. Inert gases such as argon or neon are used in back-sputtering. 

Fig. 5. Reactive-ion plating using auxiUary electrode for low pressure operation in deposition of compounds (6).

RIE = reactive ion etching ECR = electron cyclotron resonance etching. 

Concurrent bombardment during film growth affects film properties such as the film—substrate adhesion, density, surface area, porosity, surface coverage, residual film stress, index of refraction, and electrical resistivity. In reactive ion plating, the use of concurrent bombardment allows the deposition of stoichiometric, high density films of compounds such as TiN, ZrN, and Zr02 at low substrate temperatures. 

Modulation Spectroscopy can be very usefiil in evaluating strains induced by growth (lattice-mismatched systems) or processing procedures, such as reactive-ion etching or oxide formation. The size and magnitude of the strain can be evaluated from the shifrs and splitdngs of various spectral lines, such as. ) or... 

Non-reactive ion-exchange resin. Commonly employed at a specific intermediate density to separate cation and anion resins in a mixed-bed demineralization plant, in order to limit contaminant leakage, especially from regenerants. 

Reactive ion plating is similar to reactive sputtering and evaporation with applications in optical, wear, abrasion, lubrication, and decorative coatings. 

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