Radical-surface interactions deposition

Dimitrios Maroudas, Modeling of Radical-Surface Interactions in the Plasma-Enhanced Chemical Vapor Deposition of Silicon Thin Films Sanat Kumar, M. Antonio Floriano, and Athanassiors Z. Panagiotopoulos, Nanostructured Formation and Phase Separation in Surfactant Solutions Stanley I. Sandler, Amadeu K. Sum, and Shiang-Tai Lin, Some Chemical Engineering Applications of Quantum Chemical Calculations... 

Dimitries Maroudas, Modeling of Radical-Surface Interactions in the Plasma-Enhanced Chemical Vapor Deposition of Silicon Thin Films... 

Maroudas, D., Modeling of radical-surface interactions in the plasma-enhanced chemical vapor deposition of silicon thin films, in (A.K. Chakraborty, Ed.), Molecular Modeling and Theory in Chemical Engineering , vol. 28, p. 252. Academic Press, New York (2001). Maroudas, D. Multiscale modeling, Challenges for the chemical sciences in the 21st century Information and communications report , National Academies, Washington, DC. p. 133. 

Maroudas, D. Modeling of radical-surface interactions in the plasma-enhanced chemical vapor deposition of silicon thin films. In Molecular Modeling and Theory in Chemical Engineering Chakraborty, A.K., Ed. Academic Press New York, 2001 252-296. 

MODELING OF RADICAL-SURFACE INTERACTIONS IN THE PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION OF SILICON THIN FILMS... 

Ramalingam, S., Maroudas, D., and Aydil, E. S., Visualizing radical-surface interactions in plasma deposition processes Reactivity of SiHs radicals with Si surfaces. IEEE Trans. Plasma Sci. 27,104-105 (1999a). 

Assuming a dominant precursor for deposition simplifies tremendously the study of plasma-surface interactions. In spite of the oversimplification, it is worth examining the effects on the film structure and composition of growth simulations solely from a given chemically reactive radical. First, direct comparison with experimental data provides an assessment for the... 

A sticking model is used for the plasma-wall interaction [137]. In this model each neutral particle has a certain surface reaction coefficient, which specifies the probability that the neutral reacts at the surface when hitting it. In case of a surface reaction two events may occur. The first event is sticking, which in the case of a silicon-containing neutral leads to deposition. The second event is recombination, in which the radical recombines with a hydrogen atom at the wall and is reflected back into the discharge. 

Some of the materials highlighted in this review offer novel redox-active cavities, which are candidates for studies on chemistry within cavities, especially processes which involve molecular recognition by donor-acceptor ii-Jt interactions, or by electron transfer mechanisms, e.g. coordination of a lone pair to a metal center, or formation of radical cation/radical anion pairs by charge transfer. The attachment of redox-active dendrimers to electrode surfaces (by chemical bonding, physical deposition, or screen printing) to form modified electrodes should provide interesting novel electron relay systems. 

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