Photocurrent semiconductor

The combination of electrochemistry and photochemistry is a fonn of dual-activation process. Evidence for a photochemical effect in addition to an electrochemical one is nonnally seen m the fonn of photocurrent, which is extra current that flows in the presence of light [, 89 and 90]. In photoelectrochemistry, light is absorbed into the electrode (typically a semiconductor) and this can induce changes in the electrode s conduction properties, thus altering its electrochemical activity. Alternatively, the light is absorbed in solution by electroactive molecules or their reduced/oxidized products inducing photochemical reactions or modifications of the electrode reaction. In the latter case electrochemical cells (RDE or chaimel-flow cells) are constmcted to allow irradiation of the electrode area with UV/VIS light to excite species involved in electrochemical processes and thus promote fiirther reactions. 

Band gaps in semiconductors can be investigated by other optical methods, such as photoluminescence, cathodoluminescence, photoluminescence excitation spectroscopy, absorption, spectral ellipsometry, photocurrent spectroscopy, and resonant Raman spectroscopy. Photoluminescence and cathodoluminescence involve an emission process and hence can be used to evaluate only features near the fundamental band gap. The other methods are related to the absorption process or its derivative (resonant Raman scattering). Most of these methods require cryogenic temperatures. 

These three equations (11), (12), and (13) contain three unknown variables, ApJt kn and sr The rest are known quantities, provided the potential-dependent photocurrent (/ph) and the potential-dependent photoinduced microwave conductivity are measured simultaneously. The problem, which these equations describe, is therefore fully determined. This means that the interfacial rate constants kr and sr are accessible to combined photocurrent-photoinduced microwave conductivity measurements. The precondition, however is that an analytical function for the potential-dependent microwave conductivity (12) can be found. This is a challenge since the mathematical solution of the differential equations dominating charge carrier behavior in semiconductor interfaces is quite complex, but it could be obtained,9 17 as will be outlined below. In this way an important expectation with respect to microwave (photo)electro-chemistry, obtaining more insight into photoelectrochemical processes... 

The Gartner model simulates charge collection by a potential-dependent space charge layer and considers diffusion into the space charge layer of charge carriers generated deep inside the semiconductor. The well-known Gartner formula for the photocurrent /ph is... 

As mentioned in the introduction, before an adequate theory was developed, it was difficult to understand the experimentally determined pho-toinduced PMC signals, especially the minority carrier accumulation near the onset of photocurrents.The reason was that neither conventional solid-state semiconductor theory nor photoelectrochemical theory had taken such a phenomenon into account. But we have shown that it is real and microwave (photo)electrochemical experiments clearly confirm it. 

It is well known that photoelectrochemical measurements do not indicate photocurrents in the accumulation region of an illuminated semiconductor. The reason is that majority carriers control interfacial reactions, which... 

Surface recombination processes of charge carriers are mechanisms that cannot easily be separated from real semiconductor interfaces. Only a few semiconductor surfaces can be passivated to such an extent as to permit suppression of surface recombination (e.g., Si with optimized oxide or nitride layers). A pronounced dip is typically seen between the potential-dependent PMC curve in the accumulation region and the photocurrent potential curve (e.g., Fig. 29). This dip may be partially caused by a surface... 

The schemes in Figs. 44 and 45 may serve to summarize the main results on photoinduced microwave conductivity in a semiconductor electrode (an n-type material is used as an example). Before a limiting photocurrent at positive potentials is reached, minority carriers tend to accumulate in the space charge layer [Fig. 44(a)], producing a PMC peak [Fig. 45(a)], the shape and height of which are controlled by interfacial rate constants. Near the flatband potential, where surface recombination... 

Erley G, Gorer S, Penner RM (1998) Transient photocurrent spectroscopy Electrical detection of optical absorption for supported semiconductor nanocrystals in a simple device geometry. Appl Phys Lett 72 2301-2303... 

A thorough insight into the comparative photoelectrochemical-photocorrosion behavior of CdX crystals has been motivated by the study of an unusual phenomenon consisting of oscillation of photocurrent with a period of about 1 Hz, which was observed at an n-type CdTe semiconductor electrode in a cesium sulfide solution [83], The oscillating behavior lasted for about 2 h and could be explained by the existence of a Te layer of variable width. The dependence of the oscillation features on potential, temperature, and light intensity was reported. Most striking was the non-linear behavior of the system as a function of light intensity. A comparison of CdTe to other related systems (CdS, CdSe) and solution compositions was performed. 

In a subsequent work [182], it was shown that the photoelectrochemical performance of InSe can be considerably improved by means of selective (photo)electrochemical etching. Interestingly, whereas the cleavage vdW plane showed little improvement, the photocurrent in the face parallel to the c-axis was doubled. Note that, in contrast to InSe crystals cleaved in the plane perpendicular to the c-axis that are almost defect free, the crystals cut in the plane parallel to the c-axis contain a high density of defects on their surface which leads to a high rate of electron-hole recombinations and inferior quantum efficiency. The asymmetry in the role of electrons and holes, as manifested, e.g., in the fact that surface holes carry out the selective corrosion of the semiconductor surface in both cleavage orientations, was discussed. 

The (photo)electrochemical behavior of p-InSe single-crystal vdW surface was studied in 0.5 M H2SO4 and 1.0 M NaOH solutions, in relation to the effect of surface steps on the crystal [183]. The pH-potential diagram was constructed, in order to examine the thermodynamic stability of the InSe crystals (Fig. 5.12). The mechanism of photoelectrochemical hydrogen evolution in 0.5 M H2SO4 and the effect of Pt modification were discussed. A several hundred mV anodic shift of the photocurrent onset potential was observed by depositing Pt on the semiconductor electrode. 

Fig. 5.17 CdS-ZnO coupled semiconductor system (a) interaction between two colloidal particles showing the principle of the charge injection process and (b) light absorption and electron transfer on an electrode surface leading to the generation of photocurrent. (Reproduced from [330])...

Lemasson P, Etcheberry A, Gautron J (1982) Analysis of photocurrents at the semiconductor-electrolyte junction. Electrochim Acta 27 607-614... 

Lemasson P, Boutry AE, Tiiboulet R (1984) The semiconductor-electrolyte junction Physical parameters determination by photocurrent measurement throughout the Cdi xZnxTe alloy series. J Appl Phys 55 592-594... 

Chaparro AM, Salvador P, Mir A (1996) The scanning microscope for semiconductor characterization (SMSC) Study of the influence of surface morphology on the photoelectrochemical behavior of an n-MoSe2 single crystal electrode by photocurrent and electrolyte electroreflectance imaging. J Electroanal Chem 418 175-183... 

McCann JE, Pezy J (1981) The measurement of the Hatband potentials of n-type and p-type semiconductors by rectified alternating photocurrent voltammetry. J Electrochem Soc 128 1735-1740... 

Because of the excess holes with an energy lower than the Fermi level that are present at the n-type semiconductor surface in contact with the solution, electron ttansitions from the solution to the semiconductor electrode are facilitated ( egress of holes from the electrode to the reacting species ), and anodic photocurrents arise. Such currents do not arise merely from an acceleration of reactions which, at the particular potential, will also occur in the dark. According to Eq. (29.6), the electrochemical potential, corresponds to a more positive value of electrode potential (E ) than that which actually exists (E). Hence, anodic reactions can occur at the electrode even with redox systems having an equilibrium potential more positive than E (between E and E ) (i.e., reactions that are prohibited in the dark). 

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