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Oxidation moisture diffusion

Dielectric Film Deposition. Dielectric films are found in all VLSI circuits to provide insulation between conducting layers, as diffusion and ion implantation (qv) masks, for diffusion from doped oxides, to cap doped films to prevent outdiffusion, and for passivating devices as a measure of protection against external contamination, moisture, and scratches. Properties that define the nature and function of dielectric films are the dielectric constant, the process temperature, and specific fabrication characteristics such as step coverage, gap-filling capabihties, density stress, contamination, thickness uniformity, deposition rate, and moisture resistance (2). Several processes are used to deposit dielectric films including atmospheric pressure CVD (APCVD), low pressure CVD (LPCVD), or plasma-enhanced CVD (PECVD) (see Plasma technology). [Pg.347]

The possible employment of beryllium in nuclear engineering and in the aircraft industry has encouraged considerable investigation into its oxidation characteristics. In particular, behaviour in carbon dioxide up to temperatures of 1 000°C has been extensively studied and it has been shown that up to a temperature of 600°C the formation of beryllium oxide follows a parabolic law but with continued exposure break-away oxidation occurs in a similar fashion to that described for zirconium. The presence of moisture in the carbon dioxide enhances the break-away reaction . It has been suggested that film growth proceeds by cation diffusion and that oxidation takes place at the oxide/air interface. ... [Pg.835]

The uses of CVD silicon dioxide films are numerous and include insulation between conductive layers, diffusion masks, and ion-implantation masks for the diffusion of doped oxides, passivation against abrasion, scratches, and the penetration of impurities and moisture. Indeed, Si02 has been called the pivotal material of IC s.1 1 Several CVD reactions are presently used in the production of Si02 films, each having somewhat different characteristics. These reactions are described in Ch. 11. [Pg.373]

Dry-heat processes kill microorganisms primarily through oxidation. The amount of moisture available to assist sterilization in dry-heat units varies considerably at different locations within the chamber and at different time intervals within the cycle. Also, the amount of heat available, its diffusion, and the environment at the spore/air interface all influence the microorganism kill rate. Consequently, cycles tend to be longer and hotter than would be expected from calculations to ensure that varying conditions do not invalidate a run. In general, convection dry-heat sterilization cycles are run above 160°C [37],... [Pg.408]

One final example of multiple layer MPL was presented by Karman, Cindrella, and Munukutla [172]. A four-layer MPL was fabricated by using nanofibrous carbon, nanochain Pureblack carbon, PIPE, and a hydrophilic inorganic oxide (fumed silica). The first three layers were made out of mixtures of the nanofibrous carbon, Pureblack, carbon, and PTFE. Each of these three layers had different quantities from the three particles used. The fourth layer consisted of Pureblack carbon, PTPE, and fumed silica to retain moisture content to keep the membrane humidified. Therefore, by using these four layers, a porosity gradient was created that significantly improved the gas diffusion through the MEA. In addition, a fuel cell with this novel MPL showed little performance differences when operated at various humidity conditions. [Pg.246]

Metal deactivator. Metal deactivator prevents precipitation of metal ion oxidation reactions and precipitation of insoluble metal compounds. Metal deactivator in combination with other antioxidants, shows strong synergistic effects. Oxygen and moisture present, diffuse through oil film and cause corrosion. Amine derivative, used in the additive has good water-displacing properties. They impede sludge formulation, disperse sediments and reduce corrosion in various fuel systems. [Pg.403]

The rate of oxygen diffusion is proportional to the diffusivity of the waste-rock pile. Although the diffusivity of waste rock is high because of the low moisture content of the waste rock, diffusive transport of oxygen is sufficiently slow that this process limits the rate of sulfide oxidation. Advective transport of oxygen results from changes in gas pressure between the waste-rock pile and the atmosphere. Wind has the potential to drive oxygen deeper into the pile than would occur... [Pg.4719]


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