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Silicon fusion bonding

Microfabrication involves multiple photolithographic and etch steps, a silicon fusion bond and an anodic bond (see especially [12] for a detailed description, but also [11]). A time-multiplexed inductively coupled plasma etch process was used for making the micro channels. The microstructured plate is covered with a Pyrex wafer by anodic bonding. [Pg.595]

The reactor could be heated to 900 °C by applying these elements. The fabrication of the device was performed by deep reactive ion etching (DRIE) or KOH etching combined with silicon fusion bonding. [Pg.331]

Silicon fusion bonding [65], which employs a similar mechanism to bond together the surfaces of two slightly-oxidized silicon wafers at high temperatures and... [Pg.4]

Silicon direct bonding (silicon fusion bonding). [Pg.38]

Silicon Direct Bonding (Silicon Fusion Bonding)... [Pg.38]

M. Noworolski, E. Klaassen, 1. Logan, K. Petersen, and N. I. Maluf, Fahrication of SOI wafers with buried cavities using silicon fusion bonding and electrochemical etchback. Sensors Actuators A 54, 709, 1996. [Pg.472]

Silicon-to-silicon fusion bonding involves a high-temperature (1000°C) treatment to strengthen the weak bond formed after hydrophilization and contact at room temperature of two polished silicon wafers [37, 38]. The high-temperature step rules out the use of metal layers. Moreover, bonding failure may occur around cavities due to expansion of trapped air, in addition to the fact that the bond quality decreases drastically with every surface imperfection. [Pg.83]

Silicon fusion bonding has been extensively studied during the past few years not only for sensor applications, but also because it represents a good alternative for the fabrication of high quality silicon-on-insulator (SOI) wafers [39]. [Pg.83]

Fig. 5.1.16 Piezoresistive pressure sensor made by silicon fusion-bonding (SFB) to obtain small chip size and anodic bonding to form a sealed vacuum cavity... Fig. 5.1.16 Piezoresistive pressure sensor made by silicon fusion-bonding (SFB) to obtain small chip size and anodic bonding to form a sealed vacuum cavity...
The combustor was composed of three fusion-bonded silicon wafers. Hydrogen was added to the air flow by 76 injector holes of 30 pm diameter. The mixture then entered the annular-shaped combustion chamber through 24 combustor inlet ports of340 pm diameter and left the device through a circular exhaust. The dimensions of the combustion chamber were 5 and 10 mm diameter at a height of 1 mm, which corresponds to a volume of 66 mm3. The fabrication of the device was performed by dry isotropic and anisotropic etching (Figure 2.42). [Pg.334]

Assembly of the microchannels was obtained using bonding techniques such as hydrophobic silicon bonding, electromagnetic induction heating, fusion bonding, and anodic bonding. ... [Pg.373]

Uses Hot-melt adhesive for extmsion of fusible film, monofilament, netting, web, and multifilament, for thin film fusible coatings, for fusion bonding of textiles, leather, wood, glass, metals, and misc. applies., for coating of interlinings and nonwovens for garment industry Features Rec. for siliconized fabrics Properties Powd. [Pg.635]

Cheng YT, Lin L, Najafi K (2000) Localized silicon fusion and eutectic bonding for MEMS fabrication and packaging. J Microelectromech Syst 9(l) 3-8... [Pg.2647]


See other pages where Silicon fusion bonding is mentioned: [Pg.382]    [Pg.1857]    [Pg.1868]    [Pg.1137]    [Pg.1146]    [Pg.170]    [Pg.73]    [Pg.382]    [Pg.1857]    [Pg.1868]    [Pg.1137]    [Pg.1146]    [Pg.170]    [Pg.73]    [Pg.86]    [Pg.376]    [Pg.50]    [Pg.255]    [Pg.576]    [Pg.87]    [Pg.105]    [Pg.353]    [Pg.353]    [Pg.36]    [Pg.74]    [Pg.1861]    [Pg.1865]    [Pg.2051]    [Pg.2240]    [Pg.2345]    [Pg.3005]    [Pg.3479]    [Pg.249]    [Pg.60]    [Pg.21]    [Pg.54]    [Pg.1141]    [Pg.1143]    [Pg.1203]    [Pg.1366]   
See also in sourсe #XX -- [ Pg.83 , Pg.87 ]




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