Indium transport properties

Shigesato Y. and Paine D. C., Study of the effect of Sn doping on the electronic transport properties of thin film indium oxide, Appl. Phys. Lett. 62 (1993) pp.l268-1270. 

Electronic Transport, General Description. Indium Phosphide (InP). The transport properties are determined mainly by the electrons in the Tec minimum. Above 800 K, multivalley conduction, where the Lee minimum is involved, becomes important. 

Indium Antimonide (InSb). The transport properties are mainly determined by the extremely high mobility of the electrons in the Fe minimum of the conduction band. Pure material with intrinsic conduction down to 200 K is available. At low temperatures and in doped material, impurity scattering limits the electron mobility. 

The organic solar cells are constructed by deposition of different layers following a p-i-n architecture, as shown in Figure 2.38. The transport layers introduced between the organic active layer and the electrodes play an important role, because the active layer normally has poor transport properties. Moreover, there is a need to separate the excitons that form close to the electrodes to avoid quenching processes that would hamper the photocurrent. The corresponding electrodes are usually made of indium tin oxide (ITO) as the anode and some metal, such as Au or Al, as the cathode. 

In a recent pubHcation, Alivisatos and co-workers reported the making of hybrid nanorods-polymer solar cells and their properties [122]. These solar cells were made by spin casting of a solution of both poly(3-hexylthiophene) (hole acceptor) and CdSe nanorods (electron acceptor) onto indium tin oxide glass substrates coated with poly(ethylene dioxythiophene) doped with polystyrene sulfonic acid and aluminum as a top contact. Nanorods have been used in composites so as to improve the carrier mobiHty. Indeed, the latter can be high for some inorganic semiconductors, but it is typically extremely low for conjugated polymers [123]. The use of the nanorods suppHes an interface for the charge transfer as well as a direct path for electrical transport. Also, because of their anisotropy, self-assembly of these nanorods is observed by electron microscopy. It shows... 

Taguchi H., Matsu-ura S., Nagao M., Kido H. Electrical properties of perovskite-type La(Cri, Mn,)03+j. Physica B 1999 270 325-331 Tahar R.B.H., Ban T., Ohya Y., Takahashi Y. Optical, structural, and electrical properties of indium oxide thin films prepared by the sol-gel method. J. Appl. Phys. 1997 82 865-870 Tahar R.B.H., Ban T, Ohya Y., Takahashi Y. Electronic transport in tin-doped indium oxide thin films prepared by sol-gel technique. J. Appl. Phys. 1998 83 2139-2141 Tahar R.B.H., Tahar N.B.H. Mechanism of carrier transport in aluminum-doped zinc oxide. J. Appl. Phys. 2002 92 4498-4501... 

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