Indium optical properties

Davis, J. G. Bridenbaugh, P. M. Wagner, S. 1978. Electrical and optical properties of copper indium ditelluride crystal grown from near-stoichiometric compositions. I. Electron. Mater. 7 39-45. 

T. Nagamoto, Y. Maruta, and O. Omoto, Electrical and optical properties of vacuum-evaporated indium-tin oxide films with high electron mobility, Thin Solid Films, 192 17-25 (1990). 

S. Honda, M. Watamori, and K. Oura, The effects of oxygen content on electrical and optical properties of indium tin oxide films fabricated by reactive sputtering, Thin Solid Films, 281-282 206-208, 1996. 

A note of caution is necessary when deahng with these materials. It is not trivial to distinguish between CuInS(Se)2 and some phases of Cu—S(Se). Diffraction and optical properties may be similar. Elemental analysis is particularly important to verify inclusion of indium in the films and in the correct ratio. A fingerprint of the chalcopyrite XRD is the presence of a weak peak at 26 = 17-18°, corresponding to the (101) chalcopyrite reflection. This is often not seen, although this could be either because the deposit is not chalcopyrite or because weak peaks are usually not seen in nanocrystaUine materials with particularly small crystal size. 

Rare-earth bisphthalocyaninates, especially LuPc2, are one of the important objects of intense investigation because of their electrochemical (electrochromic effect), electrical, and optical properties. The ball-type four t-butyl-calix[4]arene bridged double decker lutetium(III) and indium(III) Pcs have also been prepared, Fig. 3 [42],... 

The optical properties of Pr3+ ions have been studied in various fluoride glasses based on zirconium [31,43,45-47], on indium [31,43,48,49] or on zinc fluorides [48,50]. 

Lee S. B., Pincenti J. C., Cocco A. and Naylor D.L. Electric and optical properties of room temperature sputter deposited indium oxide J. Vac. Soc. Technol. 1993 All 5-10. 

Nanto H., Minami T., Orito S. and Takata S., Electrical and optical properties of indium tin oxide thin films prepared on low-temperature substrate by rf magnetron sputtering under an applied external magnetic field, J. Appl. Phys. 63 (1988) pp. 2711-2716. 

Phthalocyanine derivatives of indium(III) have attracted even more interest.Some indium phthalocyanine adducts show interesting nonlinear optical properties.For example, tert-butyl-substituted chloro(phthalocyaninato)indium(III) (t-Bu)4PcInCl (24) is one of the best substances for optical-limiting applications. " Optical limiters limit the intensity of transmitted light once the input intensity exceeds a threshold value. This ability is useful for the protection of sensitive objects, such as human eyes or light sensors from high-intensity light beams. 

Thioacetamide, which is well established for the precipitation of ZnS in solutions, can be also used [68] in which case the films have been deposited from acidic solutions. The addition of urea has a beneficial effect on the adherence [68], Some attempts have been made to deposit ZnS by using thiosulfate-based solutions [16], As compared to CdS and PbS it appears that the deposition of ZnS films is not yet optimized and in addition presents some differences in the growth mechanism. This is illustrated by the lower activation energy values ( 20 kJ.rnol" ) which has been determined in the ammonia-thiourea-hydrazine process, which is more likely characteristic of a diffusion limited growth [69]. The deposition of indium sulfide has been also reported in acidic solutions using TA [52], along with a detailed study of the influence of the deposition conditions on the structural and optical properties of the films. 

The choice of a suitable counter-electrode for a successful EW is not easy since only a few compounds fulfil the desired operational requirements which call for an uncommon combination of electrochemical and optical properties. The most promising, and, thus far, the mostly used materials are indium tin oxide, nickel oxide, iridium oxide and cobalt oxide among the inorganic ECMs, and polyaniline (PANI) among the organic ECMs. The electrochromic properties of indium tin oxide and PANI have been described in Chapter 7. Therefore, here attention will be mainly focused on transition metal oxide counter-electrodes. 

Weigtens, C.H.L., Loon, P.A.C. (1991). Influence of annealing on the optical properties of indium tin oxide. Thin Solid Films, Electronics and Optics, Vol. 196, p>p. 17-25. 

Third-order nonlinear optical properties (namely, quadratic electrooptic coefficient) of this polymeric system at different dye concentrations have been measured using a modified Michelson interferometer at 633nm. For this measurement, the polymer film was spin-coated from the filtered solution on an indium-tin-oxide (FTO) coated glass plate where the ITO layer was used as an electrode. A gold layer of 500A thickness was thermally evaporated onto the polymer film to form the second electrode. The experimental set-up of this modified Michelson interferometer is schematically shown in (Figure 7). 

Based on the molecular orientational tilting of LCs, various structures have been suggested to vary voltages onto LCs and thus change optical properties [5,6]. Choi et al. fabricated a two-dimensional LC microlens array using a surface relief structure of ultraviolet (UV)-curable polymer [5]. The microlens array cell was made with indium tin oxide (TTO) glass substrates. One substrate had a specific surface relief structure of the photopolymer used and the other had only the ITO layer. 

J.C. Lemonnier, G. Jezequel, J. Thomas, Optical properties in the far UV and electronic structure of indium films. J. Rhys. C Solid State Rhys. 8, 2812-2818 (1975)... 

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