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In situ Stress Measurement

Zoback, M. D. Harjes, J. H. 1997. In situ stress measurements to 3,5 km in the Cajon Pass scientific research borehole implications for mechanics of crustal faulting. Journal of Geophysical Research, 97, 5039-5057. [Pg.367]

Experimental results and modeling strategy for the determination of stresses in thermosets used in microelectronics are presented. The bending beam technique for in situ stress measurement is particularly emphasized. This technique is here extended to determine the glass transition temperature, Tg, and the product of the elastic modulus and coefficient of thermal expansion,... [Pg.351]

In-situ Stress Measurements at the Solid/Liquid Interface Using a Micromechanical Sensor... [Pg.87]

IN-SITU STRESS MEASUREMENT IN SIKESHU MINING AREAS... [Pg.1128]

Kang H P. Lin J. 2010. In-situ stress measurements and distribution laws in Lu an underground coal mines. Rock and Soil Mechanics, 31 (3) 827-833. [Pg.1131]

Luo C W. Li H B. 2010. Study of distribtion characteristics of stress in surrounding rock mass and in-situ stress measurement for deeply buried ttmnels. Chinese Journal of Rock Mechanics and Engineering, 29(7) 1418-1 423. [Pg.1131]

There are still other methods which are suitable for controlling the phase evaluation in cBN films. Barth et al. [66] measured in situ infrared reflectance spectra during the deposition time and revealed different deposition processes on silicon and steel substrates, respectively. McKenzie et al. [48] concluded from in situ stress measurements that there is a stress threshold above which the cBN growth is beginning. However, in both cases the process conditions were not modified during film growth. [Pg.435]

M. Nishida, M. Rifaimulish, Y. Ikeuchi, N. Minakawa, T. Hanabusa, Low temperature in-situ stress measurement of W/Cu composite by neutron diffraction, International Journal of Modem Physics B, 20, 3668-3673, (2006). [Pg.76]

Section 11.5 deals with AE measurement during hydraulic fracturing tests which are used for in-situ stress measurement in rock. The typical linear dimension of the covered region in this case is up to 10 m. [Pg.242]

N.N. (2002) Suggested method for in-situ stress measurement from a rock core using the Acoustic Emission technique. In Proc. of 5 International Workshop on the Application of Geophysics in Rock Engineering, Toronto, Canada, pp 61-66... [Pg.308]

Stafford GR, Kongstein OE, Haarberg GM (2006) In situ stress measurements during aluminum deposition from AICis-EtMelmCi ionic liquid. J Eiectrochem Soc 153 C207-C212... [Pg.64]

Wu Manlu, Zhang Yueqiao et al. 2010. Preliminary results of in-situ stress measurements along the longmenshanfault zone after the wenchuanms 8.0 earthquake. Acta Geologica Sinica 84(9) 1292-1299. [Pg.365]

The rock mass movement of magmatic and metamorphic deposits tends to be under the master control of horizontal tectonic principal stress (Zhao et al. 2012b). This rule was proved by the in-situ stress measurement conducted by Miao et al. (2004) in the Sanshandao mine. The stress values were calculated from the strain values, rock elastic modulus and Poisson ratios of four measurement points installed separately in the south section of -75 m drift, north section of -150 m drift and south and north of -420 m. For both the Xinli mine and the Sanshandao mine belong to a same ore-controlling fault belt, their in-situ... [Pg.374]

Fig. 16. (A) In situ stress measurements for Permalloy films as a function their thick-... Fig. 16. (A) In situ stress measurements for Permalloy films as a function their thick-...
In all cases, the stress significantly decreased over 400°C or 450°C (Fig. 12-5). At least, it is not the microcrakcs that decreased the stress no microcracks were detected in SEM images obtained after in situ stress measurement. The films were crystaUized between 400°C and 500°C, suggesting that the reduction in stress is caused by crystallization. How crystallization reduces the stress in films, however, is not known, and further study should be made. [Pg.254]

Infrared absorption spectra revealed that the methyl groups are decomposed between 500°C and 600°C, suggesting that they remain in films at temperatures below 500°C where in situ stress measurement was conducted. Therefore, suppressed polycondensation reaction would be the cause of the lower degree of stress evolution in films prepared with MTES. Unfortunately, 500°C is the limit of temperature achievable with the stress measurement apparatus that we used. However, more significant increase in stress is expected over 500°C, where decomposition of the methyl groups occms. [Pg.255]

Figure 3.21 illustrates the structure of the cell used for the in situ stress measurement. The active material was electrodeposited on only one side of the electrode. Hence the electrode acted as a cantilever which is deflected by the stress generated at the interface between the active material and the substrate. With the volume expansion of the active material, tensile stress was generated on the Cu substrate, whereas the volume contraction would result in compressive stress. A laser beam was irradiated on the Cu (non-... [Pg.126]

The in situ stress transition of the electrodeposited Sn and Sn62Ni3s anodes were evaluated by means described above. Figure 3.22a,b shows the results of in situ stress measurements of the Sn and the Sn62Ni38 electrodes, respective. The negative values of the deflection profile represent compressive stress (expansion of the active material). Tests of repeated charge-discharge cycles showed that the deflection response of the electrode continued, and it was confirmed that the substrate elasticity was retained during the first cycle. It is difficult to obtain quantitative reproducibility due to the individual textures that differ with each electrode (such as their cracks and pores). However, the qualitative reproducibility which indicates that the electrode shows a tendency that is dependent on the electrode composition has been confirmed. [Pg.127]

In-situ stress measurements of gold films on glass substrates during thermal cychng, A. Katz, S. Nakahara and M. Geva, J. Appl. Phys., 1991, 70(12), 7343. [Pg.366]


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