Stress measurement Fig

Wall Shear Stress Measurements, Fig. 1 Velocity profile in a microchannel and zoomed region close to the wall left and middle left). Velocity gradients in biological flows middle right) and structured walls with slip right)... 

Wall Shear Stress Measurements, Fig. 2 Schematic of a typical /tPIV system (/ ) and principle schematic of the imaging with reversed colors (right) (After [3])... 

Wall Shear Stress Measurements, Fig. 3 Schematic of in-plane velocity measurement. The inhomogeneous particle distribution and defocused particle images with different velocities due to out-of-plane gradients bias the results... 

Wall Shear Stress Measurements, Fig. 4 In-plane velocity profiles at the center of a microchannel evaluated with single-pixel ensemble correlation and particle tracking velocimetry... 

Wall Shear Stress Measurements, Fig. 5 Schematic of out-of-plane velocity gradient measurement. The velocity profiles are obtained from a scan of /tPIV... 

If new paper is torn the fibers slide apart without breaking. This can be sho wn with pictures from a scanning electron microscope of the angles of cracks of aged and non-aged paper after a strain-to-stress measurement (Fig. 13.5). The fibers of the new paper only slid apart whereas in the aged paper they broke. This means that the fiber-fiber bonds in new paper and the individual fibers in aged paper are the mechanically weaker points. 

Results of own stress measurements in the pipe joints zone applied in high power, have been shown in Fig 5 and 6. 

Fig. 10. Concentration dependence of a modulus in the region of low-frequency plateau (i.e. yield stress , measured by a dynamic modulus). Dispersion medium poly (butadiene) with M = 1.35 x 105 (7), silicone oil (2) polybutadiene with M = 1 x I04 (3). The points are taken from Ref. [6], The straight line through these points is drawn by the author of the present paper. In the original work the points are connected by a curve in another manner...

Photoelastic measurement is a very useful method for identifying stress in transparent plastics. Quantitative stress measurement is possible with a polarimeter equipped with a calibrated compensator. It makes stresses visible (Fig. 5-2). The optical property of the index of refraction will change with the level of stress (or strain). When the photoelastic... 

Hitachi High Technologies Corporation, Device and method for measurement of strain in silicon substrates for semiconductor devices (stress measurement device for semiconductor device). Inventors S. Snznki, Y. Nakano, T. Konno and K. Umemura. 14 pp. (incl. 17 fig.). Appl. 11 Nov 2005. Int. Cl. H01L21/66 G01N21/65. IP Patent Application Pnblication 2007-134531 (Applic. 2005-326834)... 

The fluidity of the cement paste can be measured in rheological terms by the torque transmitted to a stationary bob inside a revolving outer cylinder placed in a water-cement system as shown in Fig. 1.10. The shear stress measured at the stationary bob is plotted against the rate of applied shear when, for pastes of varying water-cement ratios, the results shown in Fig. 1.11 are obtained for readings taken of the shear stress as the shearing rate is increased (the up curve). 

Fig. 10.45 Schematic diagram of the X-ray stress measurement, iso-inclination method, and fixed ijro method. The tilt of the sample is (a) +ifr and (b) —xjr.

Fig. 10.50 X-ray diffraction pattern for the electrolyte of the anode-supported cell. The diffraction peaks by arrows are used for the stress measurements.

Fig. 10.26 The stress measure, a, contours. a ) Counter-, side gap, plane (I). (a2) Counter calender gap, plane (II). (b ) Co-plane (I) and (62) Co-plane (II). [Reprinted by permission from T. Katziguara, Y. Nagashima, Y. Nakano, and K. Funatsu, Numerical Study of Twin Screw Extruders by 3-D Flow Analysis - Development of Analysis Technique and Evaluation of Mixing Performance for Full Flight Screws, Polym. Eng. Sci., 36, 2142 (1996).]...

Fig. 5.3. Amount of bias stress, measured as fractional current decay after a 100 ms gate pulse (Vc = -20 V), as a function of temperature in PQT-12.

Steady State Measurements Fig. 1 shows the shear rate-shear stress curves at various bentonite concentrations (calculated on the basis of the continuous phase) Hysteresis in the shear rate-shear stress curves was insignificant and the correlation between the ascending and descending curves was within experimental error. The results shown in Fig. 1 were therefore, the mean value of the ascending and descending curves. In the absence of any bentonite the suspension was Newtonian, whereas all suspensions containing bentonite at concentrations > 30 g dm were all pseudoplastic. This is illustrated from a plot of viscosity versus shear rate (Figure 2) which shows an exponential reduction of h with increase in shear rate. 

For a particle volume fraction of < > = 0.2, this predicts a yield stress of 500 Pa at the i.e.p., and it also predicts that this yield stress is reduced to zero when f is increased to about 30 mV. These results are within about a factor of two of the experimentally measured yield stresses (see Fig. 7-19 for example). However, the scaling of cty with particle size and concentration (cry a is stronger than predicted by Eq. (7-28), and so agreement is... 

As far as the craze drawing lifetime (Fig. 4) was concerned, estimation was certainly rather more subjective. Nevertheless, two series of tests interpreted by two different experimenters produced similar results, their estimates were supported independently by their supervisor, and neither experimenter knew of the values which would be predicted by the model. For this material Af = 310k density, specific enthalpy and thermal conductivity were known as functions of temperature and the craze stress measured using full notch impact tests was in the range 20-30 MPa. Figure 5 compares the measured decohesion times to those predicted by the model, plotted as trend lines for two constant values of cohesive stress — 20 and 50 MPa — and two values of effective molecular weight (which has only a secondary effect). 

Figure 6.11(a) shows H as a function of the deformation under stress and Fig. 6.11 (b) H measured after removing the tensile stress on the sample, i.e. the deformations in (b) (related ones) correspond to the residual, plastic deformations. In accordance with common practice (Baltd Calleja, 1985) H values in the direction perpendicular to the draw direction (H ) have been used and are designated as just H. They correspond to the plastic deformation of the oriented polymer material under the indenter. 

Flow Functions and Flowabilily Indices Consider a powder compacted in a mold at a compaction pressure Oi. When it is removed from the mold, we may measure the powder s strength, or unconflned miiaxial compressive yield stress L (Fig. 21-38). The unconfined yield and compaction stresses are dietermined directly from Mohr circle constructions to yield loci measurements (Fig. 21-36). This strength increases with increasing previous compaction, with this relationship referred to as the powder s flow function FF. 

An example of stress measurements in depth is given in Fig. 16-11, which shows the residual stress produced in hardened steel by grinding. The extremely... 

Fig. 16-14 Photographic method of stress measurement (single-exposure technique). After Norton [16.13].

Fig. 16-15 Stress camera in position for a stress measurement by the single-exposure technique. The head of the x-ray tube is enclosed in a protective cover. (Courtesy of Advanced Metals Research Corporation.)...

Fig. 7.1.11 [BliiSJ Calibration of T2 values measured for different strains of filled PDMS rubber, (a) Experimental values of T2 versus integral strain, (b) Stress-strain curve from mechanical measurements, (c) The calibration curve of T2 versus integral stress obtained by combining the data from the NMR measurement (a) and mechanical measurement (b). These curves have been used to calibrate an experimental T2 image into the stress image Fig. 1.1.7 of a PDMS rubber band with a cut.

Fig. 13. Drain current, mobility, and threshold voltage transition of a-Si H TFT under a bias-temperature-stress measurement (Vgs=Ve)s=15 V, 65 °C). The current drop is attributed to the threshold voltage shift in a-Si H TFT.

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