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Ideal surface film

For an ideal surface film, behaving as a two-dimensional gas, the surface pressure X is related to the surface excess Tj by the equation. [Pg.61]

It can be concluded that the concentrations of the PFAM solution is an important factor for the PFAM film formed on the slider surface to affect the stiction and friction in the CSS tests. If the concentration is controlled around 500 ppm, an ideal surface topography, good hydrophobic nature, a preferred film thickness, and better frictional and anti-wear properties can be obtained. [Pg.214]

A major problem in the sampling of surface films is the inclusion of water in the film. In the ideal sampler, only the film of organic molecules, perhaps a few molecular layers in thickness, floating on the water surface, would be removed the analytical results should then be expressed either in terms of volume taken or of surface area sampled. [Pg.23]

The primary techniques used in this study include X-ray photoelectron spectroscopy (XPS), reflection-absorption infrared spectroscopy (RAIR), and attenuated total reflectance infrared spectroscopy (ATR). XPS is the most surface-sensitive technique of the three. It provides quantitative information about the elemental composition of near-surface regions (< ca. 50 A sampling depth), but gives the least specific information about chemical structure. RAIR is restricted to the study of thin films on reflective substrates and is ideal for film thicknesses of the order of a few tens of angstroms. As a vibrational spectroscopy, it provides the type of structure-specific information that is difficult to obtain from XPS. The... [Pg.494]

The principal requirements for an ideal gaseous film are that the constituent molecules must be of negligible size with no lateral adhesion between them. Such a film would obey an ideal two-dimensional gas equation, ttA kT, i.e. the it-A curve would be a rectangular hyperbola. This ideal state of affairs is, of course, unrealisable but is approximated to by a number of insoluble films, especially at high areas and low surface pressures. Monolayers of soluble material are normally gaseous. If a surfactant solution is sufficiently dilute to allow solute-solute interactions at the surface to be neglected, the lowering of surface tension will be approximately linear with concentration - i.e. [Pg.103]

Because of the low absorption coefficient of amorphous and microcrystalline silicon, it is mandatory to optimize light scattering within thin film silicon solar cells by the use of suitably textured (rough) interfaces and surfaces. This paragraph comments about the ideal surface roughness for ZnO layers deposited by CVD, and used as front or back contacts within amorphous, microcrystalline (and micromorph) solar cells. [Pg.286]

We assume in the following discussion that the solid surface under consideration is of the same chemical identity as the bulk, that is, free of any oxide film or passivation layer. Crystallization proceeds at the interfaces between a growing crystal and the surrounding phase(s), which may be solid, liquid, or vapor. Even what we normally refer to as a crystal surface is really an interface between the crystal and its surroundings (e.g., vapor, vacuum, solution). An ideal surface is one that is the perfect termination of the bulk crystal. Ideal crystal surfaces are, of course, highly ordered since the surface and bulk atoms are in coincident positions. In a similar fashion, a coincidence site lattice (CSL), defined as the number of coincident lattice sites, is used to describe the goodness of fit for the crystal-crystal interface between grains in a polycrystal. We ll return to that topic later in this section. [Pg.28]

Dissolution and deposition processes occur uniformly via the surface films and beneath them. Hence, the surface films are sufficiently flexible to follow the changes in the metal-film interface and thus continuously protect the active surface from reactions with the solution species. Such behavior is ideal for rechargeable battery applications (see Figure 5). [Pg.301]

These requirements hold for the films at both the positive and negative electrode surfaces. Thus, these surface films frequently comprise quite complex mixtures of reaction products and their presence affects the kinetic properties of charge transfer across the interface. It is the deviation of surface film s properties from meeting this set of ideal requirements that is the single most important cause of cell failure in a large fraction of cases. When the decomposition reactions occur, a small amount of active material must also be irreversibly consumed. [Pg.449]

Equation (3) has the same form as one of Gibbs s fundamental equations for a homogeneous phase, and owing to this formal similarity the term surface phase is often used. It must be remembered, however, that the surface phase is not physically of the same definiteness as an ordinary phase, with a precise location in space neither do the quantities c , if, mf refer to the total amounts of energy, entropy, or material components present in the surface region as it exists physioally they are surface excesses , or the amounts by which the actual system exceeds the idealized system in these quantities. Care must be taken not to confuse the exact mathematical expression, surface phase , with the physical concept of the surface layer or surface film. [Pg.110]

The above discussion is relevant to isotropic bulk materials. Where a thin film is deposited on a harder substrate, there is a general tendency for the area of contact to be determined by the yield stress (or approximately by the hardness) of the substrate, while the shear stress is determined by the surface film. In the ideal case... [Pg.49]

Liquid thermal conductivities, k, are required in many chemical and process engineering applications where heat transfer is prevalent. They are required to evaluate the Nusselt number hd/k, the Prandtl number cp/k, and in correlations to predict the idealized condensing film coefficient based upon laminar liquid flow over a cooled surface. The thermal conductivity of a saturated liquid is ... [Pg.109]

Thermodynamic parameters for the mixing of dimyristoyl lecithin (DML) and dioleoyl lecithin (DOL) with cholesterol (CHOL) in monolayers at the air-water interface were obtained by using equilibrium surface vapor pressures irv, a method first proposed by Adam and Jessop. Typically, irv was measured where the condensed film is in equilibrium with surface vapor (V < 0.1 0.001 dyne/cm) at 24.5°C this exceeded the transition temperature of gel liquid crystal for both DOL and DML. Surface solutions of DOL-CHOL and DML-CHOL are completely miscible over the entire range of mole fractions at these low surface pressures, but positive deviations from ideal solution behavior were observed. Activity coefficients of the components in the condensed surface solutions were greater than 1. The results indicate that at some elevated surface pressure, phase separation may occur. In studies of equilibrium spreading pressures with saturated aqueous solutions of DML, DOL, and CHOL only the phospholipid is present in the surface film. Thus at intermediate surface pressures, under equilibrium conditions (40 > tt > 0.1 dyne/cm), surface phase separation must occur. [Pg.174]

The experimental results for CTAB penetration in lecithin monolayers were used, and it was assumed that the mixed film was an ideal two-dimensional mixture. From the increase in surface pressure we deduced the ideal surface density of the penetrating CTAB molecules and compared them with the values measured by the radioactive method. [Pg.192]

Although this description is frequently given of the semiconductor-solution junction, in fact, such reversible behavior of a semiconductor electrode is rarely found, especially for aqueous solutions. This lack of equilibration can be ascribed to corrosion of the semiconductor, to surface film (e.g., oxide) formation, or to inherently slow electron transfer across the interface. Under such conditions, the behavior of the semiconductor electrode approaches ideal polarizability (see Section 1.2). [Pg.750]


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See also in sourсe #XX -- [ Pg.61 ]




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