I-line resists

The actual mass flow rate through a pipe, G, in lbs per sec per sq ft is a function of critical mass flow G,-i, line resistance, N, and the ratio of downstream to upstream pressure. These relationships are plotted in Figure 19. In the area below the dashed line in Figure 19, the ratio of G to G,. remains constant, which indicates that sonic flow has been established. Thus, in sizing flare headers the plotted point must be above the dashed line. The line resistance, N, is given by the equation ... 

Figure 7.7 SEM of high-resolution images printed in AZ 7900 (DNQ-sulfonate/novolac positive i-line resist). Processing conditions resist thickness 0.748 iJim, BARC(BARLi) thickness 1920 A, soft bake at 90°C for 90 s, exposure tool Canon 300014, NA 0.63, sigma 0.65, PEB 110°C for 60-s, 64 s single puddle NMD-W developer at 20.5X. (Courtesy of R. Damrnel. )...

Figure 9.14 PROLITH/2 simulation of the effect of substrate reflectivity on i-line resist sidewall. Simulation parameters NA 0.55, a 0.5, 300-nm dense lines, focus in center of resist, at "dose-to-size. (After R. Dammel. )...

This study explores the feasibility of developing positive tone resists that can be cast and developed from water alone. Its purpose is to determine which approaches might be suitable for the design of a positive tone water-soluble resist. Each of the components of an eventual resist are explored separately with the help of model reactions to develop guidelines for the design of an eventual positive-tone water-soluble resist system. Since neither the matrix resin (Novolac) nor the photoactive compound (diazonaphthoquinone) components of classical i-line resists (7) are water soluble, resists incorporating chemical amplification (2,3) were targeted. 

We also evaluated contact an es on various device substrates (Si02, Al, poly Si, TiN) and measured minimum dot i-line resist pattern size fabricated on each substrate using each adhesion promoter. 

I When the line resistance, R. is significant compared to the line induetive reactance, Xl, there will be a... 

Once the diameter is known, the Reynolds number. Re can be computed and the friction factor f obtained from Figure 21. Assuming a straight length of pipe for L = 5(X) ft, N (line resistance factor) can be calculated. Next Gj, is calculated based on the downstream pressure and G/G j evaluated. From Figure 20 the ratio Pj/Pfl can be obtained. Since Pj is known, Pq can then be calculated. The pressure at the inlet of the knock-out drum is given by Pq -I- 0.5 psi. Table 6 provides typical values of resistance coefficients for various pipe fittings. 

Most recently, a phase-I-study defined a dose of 13-ris-retinoic acid that was tolerable in patients after myeloablative therapy, and a phase-III-trial showed that postconsolidation therapy with 13-cis-retinoic acid improved EFS for patients with high-risk neuroblastoma [7]. Preclinical studies in neuroblastoma indicate that ATRA or 13-cw-RA can antagonize cytotoxic chemotherapy and radiation, such that use of 13-cis-RA in neuroblastoma is limited to maintenance after completion of cytotoxic chemotherapy and radiation. It is likely that recurrent disease seen during or after 13-cis-RA therapy in neuroblastoma is due to tumor cell resistance to retinoid-mediated differentiation induction. Studies in neuroblastoma cell lines resistant to 13-cw-RA and ATRA have shown that they can be sensitive, and in some cases collaterally hypersensitive, to the cytotoxic retinoid fenretinide. Here, fenretinide induces tumor cell cytotoxicity rather than differentiation, acts independently from RA receptors, and in initial phase-I-trials has been well tolerated. Clinical trials of fenretinide, alone and in combination with ceramide modulators, are in development. 

Diazonium salts are also useful as a photosensitive material in a photobleachable two-layer resist system based on a doping process (10). High-resolution resist patterns were obtained using this two-layer resist scheme and an i-line reduction projection aligner. 

CEL dye. A CEL solution was obtained by dissolving poly(N-vinylpyrrolidone) (PVP) (7 g) and Dl (5.8 g) in 50 wt% aqueous acetic acid. (87.2 g). The CEL layer was spin-coated onto a photoresist, RI-7000P (Hitachi Chemical Co.), and baked at 80T for 20 minutes. Exposure was performed with an in-house i-line reduction projection aligner. The resist was developed in a 2. 38 wt% tetramethylammonium hydroxide aqueous solution. The film thickness was measured with an Alpha-step 200 (Tencor)... 

Application to the two-layer resist system. Photobleachable resist systems that have a strong absorption before exposure and that bleach completely upon UV exposure alleviate the light reflection from the substrate. A photobleachable resist system formed by means of the doping process liras reported in our previous paper (9). This resist system consists of two layers in which a diazonium salt is distributed in both the top and bottom layers. When exposed to i-line, the diazonium salt in... 

Figure 8. Exposure curve for a negative two-layer resist system formed by doping. Exposure was performed at the i-line(365nm).

Prendiville J, Crowther D, Thatcher N, Woll PJ, Fox BW, McGown A, Testa N, Stern P. McDermott R, Potter M, Pettit GR (1993) A phase I study of intravenous bry-ostatin 1 in patients with advanced cancer. Br J Cancer 68 418-424 Prendiville J, McGown AT, Gescher A, Dickson AJ, Courage C, Pettit GR, Crowther D. Fox BW (1994) Establishment of a murine leukaemia cell line resistant to the growth-inhibitory effect of bryostatin 1. Br J Cancer 70 573-578... 

The resist formulation was spin-coated onto a silicone wafer on which a bottom antireflective coating had been previously applied and then soft-baked for 60 seconds at 90°C on a hot plate to obtain a film thickness of 1000 nm. The resist film was then exposed to i-line radiation of 365 nm through a narrowband interference filter using a high-pressure mercury lamp and a mask aligner. Experimental samples were then baked for 60 seconds at 90°C on a hot plate and developed. The dose to clear, E0, which is the dose just sufficient to completely remove the resist film after 60 seconds immersion development in 2.38% aqueous tetramethyl ammonium hydroxide, was then determined from the measured contrast curve. Testing results are provided in Table 1. 

Lossless Transmission Lines. If the line resistance and dielectric conductance are both small (i.e., R

transmission line is considered lossless, and equation 11 simplifies to... 

The resist exhibits very high resolution and is well within the lithographic resolution capability of conventional exposure tools such as the g-line or i-line steppers in use today. 



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