Growth homoepitaxial

Enlargement of single crystal diamond surface area 

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Ming Jiang, Yu-Jun Zhao, Pei-Lin Cao. Surfactant-mediated layer-by-layer homoepitaxial growth of Cu/In/Cu(100) and Ag/Sb/Ag(lll) systems A theoretical study. Phys Rev B 57 10054, 1998. 

W. Qiu, Y.K. Vohra and S.T. Weir, Role of nitrogen in the homoepitaxial growth on diamond anvils by microwave plasma chemical vapor deposition, J. Mater. Res., 22, 1112-1117 (2007). 

Experimental results support this parameter-space dependence of the coarsening exponent as well. In case of Fe/Fe( 100) homoepitaxial growth (where there are estimates for the value of the Ehrlich-Schwoebel barrier), at room temperature n = 1/6 has been measured " ( = 0.16 0.02), while at elevated temperature the exponent is 1/4 ( = 0.234 0.02). These results are in excellent agreement with our predictions (Fig. 5). 

Bulk plate shaped GaN crystals do not have threading dislocations along the c-axis which would end at the (0001) surfaces. This is very different in comparison with GaN layer crystals grown on any substrate. It is also important with respect to application of these plates as substrates for homoepitaxial growth, since threading dislocations in a substrate propagate into the epitaxial layers. 

Bulk growth of GaN and AIN has been achieved by a sublimation method and a sublimation sandwich method. Bulk GaN and AIN bulk crystals were proved to have high crystallinity. It will improve the quality of nitride-based optoelectronic devices, if these bulk crystals are used as substrates for homoepitaxial growth. The size of the bulk GaN, however, is not large enough at this moment, and enlargement of bulk GaN may be necessary. 

The first homoepitaxial growth on high-pressure-grown single crystals of GaN was reported by Pakula et al [5] in 1996. Since then, a number of authors have performed similar experiments using as-grown GaN crystals as substrates [6-10], Despite many important scientific discoveries on homoepitaxial layers, the authors faced problems related to the lack of a proper surface preparation, which was the main reason that the layers were inhomogeneous (for example, variations of the half-width and the position of the photoluminescence peaks were observed). The recent development of the surface preparation made it possible to overcome this problem and to study the phenomena described below. 

Figure 7.3. Homoepitaxial growth rate using CO/H2 as the source gas. P=30Torr [107].

It may not be an overstatement to say that homoepitaxial growth technology on (100) surface has been revolutionarily changed by Okushi s group by using... 

This is a kind of two-dimensional growth mode, and layers of the deposit grow on the surface of another layer. In this case, the atomic bonding between the substrate surface and the film is greater than that between atoms of adjacent film layers. The homoepitaxial growth of Si thin film Si substrate belongs to this mode. 

In a further extension of LCG growth, Lieber and coworkers and Yang and coworkers independently demonstrated the preparation of nanowires with structurally complex radial or axial heterostructures. Radial or core-shell heterostructure nanowires were formed by depositing layers on a core nanowire (Fig. 6A). Using this approach, homoepitaxial growth of B-doped Si shells on intrinsic Si and heteroepitaxial... 

M. G. Mynbaeva, K. D. Mynbaev, A. Sarua, and M. Kuball, Porous GaN/SiC templates for homoepitaxial growth effect of the built-in stress on the formation of porous structures, Semicond. Sci. Technol. 20, 50-55 (2005). 

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