High-temperature polymers, dielectric

POLYIMIDES AND OTHER HIGH-TEMPERATURE POLYMERS 5.2.2.3 Dielectric Properties and Moisture Uptake... 

Metallized high-temperature polymers such as polyimides are nowadays widely used in microelectronics and other fields. At elcvaied lemperatures, usually encountered during processing, diffusion of the metal not only at the polymer surface but also into the bulk of the polymer may play an important role in d nnining interface formation and structure as well as the dielectric properties of the polymer after metallization . 

The volume is divided into three parts Part I. Metallization Techniques and Properties of Metal Deposits, Part II, Investigation of Interfacial Interactions," and Part III, "Plastic Surface Modification and Adhesion Aspects of Metallized Plastics. The topics covered include various metallization techniques for a variety of plastic substrates various properties of metal deposits metal diffusion during metallization of high-temperature polymers investigation of metal/polymer inlerfacial interactions using a variety of techniques, viz., ESCA, SIMS, HREELS, UV photoemission theoretical studies of metal/polymer interfaces computer simulation of dielectric relaxation at metal/insulalor interfaces surface modification of plastics by a host of techniques including wet chemical, plasma, ion bombardment and its influence on adhesion adhesion aspects of metallized plastics including the use of blister test to study dynamic fracture mechanism of thin metallized plastics. 

Studies [41,47] have demonstrated that polyimides derived from ether-bridged aromatic diamines with -CF3 groups are soluble, high-temperature polymer materials with low moisture absorption, low dielectric constant, high optical transparency, and low birefringence. The effect of fluorene substitution on the dielectric constant of polyimides has been demonstrated for a broad spectrum of fluorene-containing diamine structures (Table 3.2). The... 

Polymers are used as inserts for pins and contacts. Important properties of the commonly used insert materials have been compiled (31). Polysulfones are high temperature thermoplastics that have high rigidity, low creep, excellent thermal stabiHty, flame resistance, low loss tangents, and low dielectric constants. The principal weakness of polysulfones is their low chemical resistance. 

Polymers based on trimellitic anhydride are widely used in premium electromagnetic wire enamels requiring high temperature performance. Several types of trimellitic anhydride-derived polymers are used as wire enamels poly(amide—imide)s (133), poly(ester—imide)s (134), and poly(amide—imide— ester)s (135). Excellent performance characteristics are imparted by trimellitic anhydride-based polymers for wire enamel requirements of flexibiUty, snap, burnout, scrap resistance, heat shock, and dielectric strength. 

Electrical Properties. Polysulfones offer excellent electrical insulative capabiUties and other electrical properties as can be seen from the data in Table 7. The resins exhibit low dielectric constants and dissipation factors even in the GH2 (microwave) frequency range. This performance is retained over a wide temperature range and has permitted appHcations such as printed wiring board substrates, electronic connectors, lighting sockets, business machine components, and automotive fuse housings, to name a few. The desirable electrical properties along with the inherent flame retardancy of polysulfones make these polymers prime candidates in many high temperature electrical and electronic appHcations. 

Polymers with outstandingly high resistivity, low dielectric constant and negligible power factor, all substantially unaffected by temperature, frequency and humidity over the usual range of service conditions. 

The dissipation factor of capacitors at high frequencies is determined by the series resistance. For low frequencies there may be losses caused by leakage currents as well as by slow components in the polarizability, especially of high e ceramics and polymer dielectrics. The dissipation factor of the SIKO at room temperature is below 10-4. At 200 °C it is still very low (2X10-4). 

The dielectric constant (permittivity) [Eq. (6.2)], which is related to the polarizability of the polymer, is low for nonpolar molecules such as high-density polyethylene (hdpe), which cannot store much energy, but is relatively high for polar polymers. The dielectric constant increases as the temperature increases but reaches a plateau at relatively high temperatures. 

Certain thermoplastic polyimides possess excellent resistances to high temperatures and chemicals, with Tgs ranging from 217 to 371 °C. Certain polyimides also exhibit excellent toughness and dielectric properties. The melt blending process of polyimides with other thermoplastic polymers is difficult due to polyimides high Tg, high melt viscosities, and incompatibility. A solution process is used, therefore, to achieve a semi-interpenetrating polyimide network... 

Much attention has been paid to the synthesis of fluorine-containing condensation polymers because of their unique properties (43) and different classes of polymers including polyethers, polyesters, polycarbonates, polyamides, polyurethanes, polyimides, polybenzimidazoles, and epoxy prepolymers containing pendent or backbone-incorporated bis-trifluoromethyl groups have been developed. These polymers exhibit promise as film formers, gas separation membranes, seals, soluble polymers, coatings, adhesives, and in other high temperature applications (103,104). Such polymers show increased solubility, glass-transition temperature, flame resistance, thermal stability, oxidation and environmental stability, decreased color, crystallinity, dielectric constant, and water absorption. 

Silicon Nitride. Silicon nitride produced by high-temperature (>700 °C) CVD is a dense, stable, adherent dielectric that is useful as a passivation or protective coating, interlevel metal dielectric layer, and antireflection coating in solar cells and photodetectors. However, these applications often demand low deposition temperatures (<400 °C) so that low-melting-point substrates or films (e.g., Al or polymers) can be coated. Therefore, considerable effort has been expended to form high-quality silicon nitride films by PECVD. 

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