Gate thickness

A fan gate spreads out from the runner to fill a wider edge of the part the gate thickness decreases gradually and is shallowest at the entrance to the part. Fan gates provide uniform flow into parts where warpage and dimensional stability are important. 

Fig. 2 Schematic of field-effect transistor. As the gate length shortens, the area (A) is reduced and the gate thickness (t) needs to be reduced to keep the capacitance constant...

Gate oxide dielectrics are a cmcial element in the down-scaling of n- and -channel metal-oxide semiconductor field-effect transistors (MOSEETs) in CMOS technology. Ultrathin dielectric films are required, and the 12.0-nm thick layers are expected to shrink to 6.0 nm by the year 2000 (2). Gate dielectrics have been made by growing thermal oxides, whereas development has turned to the use of oxide/nitride/oxide (ONO) sandwich stmctures, or to oxynitrides, SiO N. Oxynitrides are formed by growing thermal oxides in the presence of a nitrogen source such as ammonia or nitrous oxide, N2O. Oxidation and nitridation are also performed in rapid thermal processors (RTP), which reduce the temperature exposure of a substrate. 

Step 8. The -type source and drain regions are created by As ion implantation. The As can penetrate the thin gate oxide, but not the thick field oxide or the polysihcon gate. The formation of the source and gate does not require a separate resist pattern, thus this technique is called self-aligning. 

Fig. 9. Fabrication sequence for an oxide-isolated -weU CMOS process, where is boron and X is arsenic. See text, (a) Formation of blanket pod oxide and Si N layer resist patterning (mask 1) ion implantation of channel stoppers (chanstop) (steps 1—3). (b) Growth of isolation field oxide removal of resist, Si N, and pod oxide growth of thin (<200 nm) Si02 gate oxide layer (steps 4—6). (c) Deposition and patterning of polysihcon gate formation of -source and drain (steps 7,8). (d) Deposition of thick Si02 blanket layer etch to form contact windows down to source, drain, and gate (step 9). (e) Metallisation of contact windows with W blanket deposition of Al patterning of metal (steps 10,11). The deposition of intermetal dielectric or final...

These processes are considerably more complex in actual CMOS fabrication. First, the lower layers of a CMOS stmcture typically have a twin-tub design which includes both PMOS and NMOS devices adjacent to each other (see Fig. 3b). After step 1, a mask is opened such that a wide area is implanted to form the -weU, followed by a similar procedure to create the -weU. Isolation between active areas is commonly provided by local oxidation of sihcon (LOCOS), which creates a thick field oxide. A narrow strip of lightly doped drain (LDD) is formed under the edges of the gate to prevent hot-carrier induced instabiUties. Passivation sidewalls are used as etch resists. A complete sequence of fabrication from wafer to packaged unit is shown in Figure 10. 

Some typical data for this mouldability index are given in Figure 8.8. One limitation of these data is that they do not explicitly show whether or not a mould will fill in an injection moulding operation. This will clearly depend on the thickness of the moulding, the flow distances required and operational parameters such as melt and mould temperatures. One very crude estimate that is widely used is the flow path ratio, the ratio of flow distance to section thickness. The assumption is that if this is greater than the ratio (distance from gate to furthest point from gate)/section thickness, then the mould will fill. Whilst... 

Example 4.6 The mould shown in Fig. 4.35 produces four cup shaped ABS mouldings. The depth of the cups is 60 mm, the diameter at the is 90 mm and the wall thickness is 1.0 mm. The distance from the sprue to the cavity is 40 mm and the runner diameter is 6 mm. Calculate the clamp force necessary on the moulding machine and estimate how the clamp force would change if the mould was designed so as to feed the cups through a pin gate in the centre of the base (as illustrated in Fig. 4.38). The clamp pressure data in Fig. 4.42 should be used and the taper on the side of the cups may be ignored. 

Polythene at 170°C is used to injection mould a disc with a diameter of 120 mm and thickness 3 mm. A sprue gate is used to feed the material into the centre of the disc. If the... 

Let us analyze the molding condition of such a product and assume that one side is made to minimum specifications and the opposite to maximum specifications where the gate is unfortunately located. Result is that the resistance to plastic flow decreases with the third power of the thickness, which means that the thick side will be filled first, while the thin side will fill from all sides. 

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