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Forward characteristic

Fin S Flow in a steady, normal shock. Shock trajectory (S), piston path (P), sample forward characteristics (solid), and particle paths (dashed) are shown... [Pg.517]

Figure 10.18 IsSpice diode forward characteristics test circuit schematic. Figure 10.18 IsSpice diode forward characteristics test circuit schematic.
By using C- V measurements preformed at room temperature and at a frequency of 7 Hz, it is possible, plotting 1/C2 versus the applied voltage (for diodes with oxide thickness of about 20 A and n close to unity) to estimate the built-in potential VB (Card and Rhoderick, 1971 Wronski and Carlson, 1977), and the space-charge density (Wronski, 1977). The validity of this method is also supported by the absence of substantial disagreement between the VB values obtained by 1/C2 versus V plots and those obtained from the extrapolated far-forward characteristic (Goodman, 1964). The value obtained for VB (in air) is equal to 0.56 eV, while for 0.5% of H2 in H2 + N2 mixture the FBH value is 0.07 eV, with a lowering of 0.49 eV as determined by the data of Fig. 10. [Pg.223]

Fig. 12. Square root of the photocurrent normalized to the number of photons versus photon energy for two conditions (a) in air, (b) in 1 % H2 in H2 + N2 mixture. The intercepts to zero photocurrent give 0B = 0.98 eV and BH = 0.845 eV. In the inset is shown the forward characteristic under the same conditions. The extrapolation gives for the built-in potential in air VB = 0.52 eV and in H2> Vm = 0.375 eV. Fig. 12. Square root of the photocurrent normalized to the number of photons versus photon energy for two conditions (a) in air, (b) in 1 % H2 in H2 + N2 mixture. The intercepts to zero photocurrent give 0B = 0.98 eV and <f>BH = 0.845 eV. In the inset is shown the forward characteristic under the same conditions. The extrapolation gives for the built-in potential in air VB = 0.52 eV and in H2> Vm = 0.375 eV.
The < bH value obtained in this case is equal to 0.845 eV, resulting in a Afa of about 135 meV. This value is in good agreement with that (145 meV) derived from the difference between the approximated value of the built-in potential obtained by the far-forward characteristic (Goodman, 1964) for the same sample under the same environmental conditions (see inset in Fig. 12). It is useful to note that determination of the change in contact potential by internal photoemission measurements is possible, bearing in mind that this process is driven by the photocurrent at least for photon energies less than 1.5 eV. [Pg.226]

Equations (19.32) and (19.33) apply to all interior points within the pipeline, so that the pressures and flows may be calculated for i = 1,2,3,. AT — 1. However, at the upstream boundary, when i = 0, no forward characteristic is present, as may be seen from inspecting Figure 19.1. At this location only the backward characteristic is available, so that only equation (19.31) is valid, which is a single equation containing the two unknowns of pressure and mass flow. A solution is possible, however, if the upstream conditions allow us to specify one of the following at i = 0 ... [Pg.243]

In exactly the same way, at the end of the pipeline only the forward characteristic is available, so that only equation (19.30) is valid. Once again the Method of Characteristics produces a single equation in the two unknowns, pressure and mass flow. Once again an additional equation is needed to specify either the pressure, or the flow, or else a relationship between the two that is valid at i = K. [Pg.243]

Again the fractional valve opening, yy, will depend on the output of an integrator in the main simulation. The forward characteristic of pipe section (1) will apply, namely equation (19.30). Fitting i = K and putting... [Pg.246]

The forward characteristic will apply for the lines normally carrying fluid into the junction. Let us use... [Pg.248]

Figure 8.38 Forward characteristic of a typical dielectric resonator in the SHF band. Figure 8.38 Forward characteristic of a typical dielectric resonator in the SHF band.
Nilsson. The influence of Auger recombination on the forward characteristic of semiconductor power rectifiers at high current densities, Solid-State Electronics Jj5, 681 (1973). ... [Pg.65]

A big step forward came with the discovery that bombardment of a liquid target surface by abeam of fast atoms caused continuous desorption of ions that were characteristic of the liquid. Where this liquid consisted of a sample substance dissolved in a solvent of low volatility (a matrix), both positive and negative molecular or quasi-molecular ions characteristic of the sample were produced. The process quickly became known by the acronym FAB (fast-atom bombardment) and for its then-fabulous results on substances that had hitherto proved intractable. Later, it was found that a primary incident beam of fast ions could be used instead, and a more generally descriptive term, LSIMS (liquid secondary ion mass spectrometry) has come into use. However, note that purists still regard and refer to both FAB and LSIMS as simply facets of the original SIMS. In practice, any of the acronyms can be used, but FAB and LSIMS are more descriptive when referring to the primary atom or ion beam. [Pg.17]

HBT Device Characteristics. The HBT consists of two back-to-back n—p diodes. In the most typical configuration the emitter—base diode is forward biased, with the coUector-base diode reverse biased. Because the current ia a forward-biased n—p diode is exponentiaUy dependent on the bias, smaU changes ia the emitter-base voltage result ia large changes ia the emitter current. The current across the emitter-base junction is a combination of the electrons iajected iato the base and the holes iajected iato the emitter. If the diode was semi-infinite to each side, the electron current density,/, could be expressed as foUows (44), where q is the electron charge, Vis the bias across the diode, kT... [Pg.374]

Activation Processes. To be useful ia battery appHcations reactions must occur at a reasonable rate. The rate or abiUty of battery electrodes to produce current is determiaed by the kinetic processes of electrode operations, not by thermodynamics, which describes the characteristics of reactions at equihbrium when the forward and reverse reaction rates are equal. Electrochemical reaction kinetics (31—35) foUow the same general considerations as those of bulk chemical reactions. Two differences are a potential drop that exists between the electrode and the solution because of the electrical double layer at the electrode iaterface and the reaction that occurs at iaterfaces that are two-dimensional rather than ia the three-dimensional bulk. [Pg.511]

Forward-Curved Blade Blowers These blowers discharge the gas at a very high velocity. The pressure supplied by this blower is lower than that produced in the other two blade characteristics. The number of blades in such a rotor can be large—up to 50 blades—and the speed is high—usually 3600-1800 rpm in 60-cycle countries and 3000-1500 rpm in 50-cycle countries. [Pg.924]

Phase 3 - Process Planning. The important design characteristics from Phase 2 are ranked with key process operations, where quantification yields actions to improve the understanding of the processes involved and gain the necessary expertise early on. The critical process operations highlighted are then carried forward to the next phase. [Pg.302]

Figure 3-29 Forward conduction voltage characteristic of the Schottky versus the ultrafast diode. Figure 3-29 Forward conduction voltage characteristic of the Schottky versus the ultrafast diode.
A small Schottky rectifier with a current rating of about 20 to 30 percent of the MOSFET current rating (/d) is placed in parallel with the MOSFET s intrinsic P-N diode. The parallel schottky diode is used to prevent the MOSFET s intrinsic P-N diode from conducting. If it were allowed to conduct, it would exhibit both a higher forward voltage drop and its reverse recovery characteristic. Both can degrade its efficiency of the supply by one to two percent. [Pg.60]

During turn-on, the transition is controlled by the forward recovery characteristic of the selected rectifier. The forward recovery time (q ) is the time it takes... [Pg.137]

As one can see, there is the familiar choke input filter (T-C) on the output, which is characteristic of the buck and all forward-mode converters. The configuration shown in Figure 4—10 is called a parallel resonant topology because the load impedance (the T-C filter acting as a damping impedance) is placed in parallel to the resonant capacitor. The input to the T-C filter stage... [Pg.151]

B.2.2 Voltage-mode Controlled Flyback Converter and Current-mode Controlled Forward-mode Converter Control-to-Output Characteristics... [Pg.203]

The operation of a discontinuous-mode, flyback converter is quite different from that of a forward-mode converter, and likewise their control-to-output characteristics are very different. The topologies that fall into this category of control-to-output characteristics are the boost, buck/boost, and the flyback. The forward and flyback-mode converters operating under current-mode control also fall into this category. Only their dc value is determined differently. Their representative circuit diagram is given in Figure B-12. [Pg.203]


See other pages where Forward characteristic is mentioned: [Pg.222]    [Pg.126]    [Pg.241]    [Pg.242]    [Pg.244]    [Pg.38]    [Pg.73]    [Pg.241]    [Pg.492]    [Pg.222]    [Pg.126]    [Pg.241]    [Pg.242]    [Pg.244]    [Pg.38]    [Pg.73]    [Pg.241]    [Pg.492]    [Pg.2745]    [Pg.112]    [Pg.141]    [Pg.97]    [Pg.356]    [Pg.112]    [Pg.350]    [Pg.351]    [Pg.360]    [Pg.379]    [Pg.777]    [Pg.1201]    [Pg.1894]    [Pg.115]    [Pg.116]    [Pg.20]    [Pg.302]    [Pg.137]   
See also in sourсe #XX -- [ Pg.242 ]




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Flyback Converters and Current-mode Forward Converter Control-to-Output Characteristics

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