Film thickness analyzer

Figure 6. Dissolution kinetics as a function of dose for an experimental e beam resist. Note that a 3 pClcm dose causes 1 pm of resist to dissolve in 848 sec at which time 0.62 pm of unexposed resist remains undeveloped. The data was generated on the FT AH Film Thickness Analyzer, Figure 7.

A simple test to estimate the interfacial layer thickness is to measure the thickness of the bottom layer before and after spinning, exposure, and development of the top layer. The difference is taken to be the thickness of the interfacial layer for comparison purposes. In reality, the mixing is continuous and the development of the top layer stops inside the interfacial layer instead of at its edges precisely. Furthermore, the test in Reference 26 relies on the IBM Film Thickness Analyzer to measure the resist thickness for convenience. Since this tool operates on the principle of spectral reflectivity changes caused by film thickness changes, a uniform refractive index is important. When some part of the interfacial layer still remains, the measurement can be erroneous in principle. 

Film thickness profiles were measured with an IBM 7840 Film Thickness Analyzer. This instrument uses an interferometric technique to determine the film thickness. 

The physical techniques used in IC analysis all employ some type of primary analytical beam to irradiate a substrate and interact with the substrate s physical or chemical properties, producing a secondary effect that is measured and interpreted. The three most commonly used analytical beams are electron, ion, and photon x-ray beams. Each combination of primary irradiation and secondary effect defines a specific analytical technique. The IC substrate properties that are most frequendy analyzed include size, elemental and compositional identification, topology, morphology, lateral and depth resolution of surface features or implantation profiles, and film thickness and conformance. A summary of commonly used analytical techniques for VLSI technology can be found in Table 3. 

A typical structure capable of being analyzed is shown in Figure 3, consisting of a substrate, two films (thicknesses q and t ), two roughness regions (one is an interfacial region of thickness and the other is a surfiice region of thickness One of... 

Ellipsometry is a method of measuring the film thickness, refractive index, and extinction coefficient of single films, layer stacks, and substrate materials with very high sensitivity. Rough surfaces, interfaces, material gradients and mixtures of different materials can be analyzed. 

Film thicknesses between 0.1 nm and 100 pm can be measured, depending on the spectral range used for the analysis and the homogeneity of the thicker films. Thicknesses < 1 pm can be determined with a sensitivity better than 0.01 nm. Thicknesses in the micron-range can be analyzed with sensitivity typically better than 1 nm. 

Experiments of propane pyrolysis were carried out using a thin tubular CVD reactor as shown in Fig. 1 [4]. The inner diameter and heating length of the tube were 4.8 mm and 30 cm, respectively. Temperature was around 1000°C. Propane pressure was 0.1-6.7 kPa. Total pressure was 6.7 kPa. Helium was used as carrier gas. The product gas was analyzed by gas chromatography and the carbon deposition rate was calculated from the film thickness measured by electron microscopy. The effects of the residence time and the temperature... 

Analysis of reaction products - Liquid reaction products were analyzed by gas chromatography using a capillary column (type WCOT Fused Silica, stationary phase 5% phenyl-methyl-polysiloxane length - 50 m ID - 0.32 mm, OD - 0.45 mm film thickness - 0.25 pm). 

For gas chromatography analysis, samples were spiked with 2-methyl-naphthalene as an internal standard. Samples were analyzed using a Shimadzu GC-17A series gas chromatograph equipped with RTX-5 column, 15 m (length) 0.25 mm (i.d.) and 0.25 pm (film thickness). The initial column temperature was 70 °C and temperature was increased at 20 °C min 300 °C, and column temperature was held for 13 min. Retention times R naphthalene, 3.2 min 2-methyl-naphthalene, internal standard, 4.09 min 1-tetralone, 4.7 min menadione, 5.68 min 1-naphthol, 5.7 min 4-hydroxy-1-tetralone, 6.1 min and 2-methy 1-4-hydroxy-1-tetralone, 6.18,6.27,6.3 and 6.4 min. 

The thermal gravimatic analysis (TGA) data was generated using a Du Pont 1090 Thermal Analyzer. Both free films which had been stripped off wafers and the film-coated wafers were examined in air and nitrogen. The film thickness was twelve (12)microns and... 

FTM and atom-probe studies of thin films of Ni, Au, Pt, a-Ge H, a-Si H and WO3, etc., on various substrates were reported by Krishna-swamy et a/.81 First, field ion tips each with a field evaporated surface were prepared. They are placed in an MRC model 8502 r.f. sputtering system. Tips were mounted on a recessed and shielded structure behind the sputtering surface which is bored with small holes about 1 to 2 mm in diameter. The very end of the tips came out of the holes to approximately the same level of the sputtering surface. Films were sputtered at about 20 mTorr Ar at an r.f. power of about 50 W. Thickness of a deposited thin film was controlled by both the r.f. power and the deposition time. Film thickness in the range of a few hundred to a few thousand A were studied. These tips were then imaged with Ne in the field ion microscope, or analyzed in the flight-time-focused ToF atom-probe. 

Analytical Methods. All of the sorbent extracts were analyzed by using GC-MS. The solutions were chromatographed on a 30-m X 0.32-mm i.d. Supelcowax 10 capillary column with a film thickness of 1 /um (Supelco). The Supelcowax 10 is a Carbowax PEG 20 M bonded-phase capillary column. The instrument conditions were as follows injector, 250 °C separator oven, 250 °C column over initial, 40 °C programmed to 250 °C at 6 °C/min linear velocity of helium carrier gas, 35 cm/s at 40 °C column head pressure, 6 lb/in.2 mass range, 33-333 amu scanned in 1-s intervals. Two-microliter aliquots were injected in the split mode at a 10-to-l split ratio. A typical chromatogram appears in Figure 1. 

Splitless injection is required for very dilute solutions. It offers high resolution but is poor for quantitative analysis because less volatile compounds can be lost during injection. It is better than split injection for compounds of moderate thermal stability because the injection temperature is lower. Splitless injection introduces sample onto the column slowly, so solvent trapping or cold trapping is required. Therefore, splitless injection cannot be used for isothermal chromatography. Samples containing less than 100 ppm of each analyte can be analyzed with a column fdm thickness < 1 p.m with splitless injection. Samples containing 100-1 000 ppm of each analyte require a column film thickness 1 p.m. 

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