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Film stacks

Figure 8.6 shows a typical cross section of the 18 MeV component of the electron beam, after de-convolution of experimental data from the radiochromic film-stack device SHEEBA [76],... [Pg.154]

M. Gerken, and D. A. B. Miller, Multilayer thin-film stacks with step-like spatial beam shifting. Journal Lightwave Technology 22, 612-618 (2004). [Pg.280]

Fig. 18. Spectral response of a SiOj-TiN-Al film stack in air and in water. Fig. 18. Spectral response of a SiOj-TiN-Al film stack in air and in water.
Extensive interface research is crucially essential for developing long-life, cost-effective, multilayer, polycrystalline, thin-film stacks for SECS. Microchemical analysis and other interface measuring techniques must be employed to solve the interfacial stability problems in the stacks. Important topical areas in solar materials interface science include thin films grain, phase, and interfacial boundaries corrosion and oxidation adhesion chemisorption, catalysis, and surface processes abrasion and erosion photon-assisted surface reactions and photoelectrochemistry and interface characterization methods. [Pg.342]

Kanai, N., T. Nuida, K. Ueta, K. Hashimoto, T. Watanabe and H. Ohsaki (2004). Photocatalytic efficiency of Ti02/Sn02 thin film stacks prepared by DC magnetron sputtering. Vacuum, 74(3 1), 723-727. [Pg.432]

Film Stack Generally films of several types are deposited over one another. Polishing of the top layer may be influenced by the mechenical characteristics of the underlying stack. This will be especially true for polymer dielectrics that usually yield under load or cyclic forces. [Pg.46]

Bi + El) Film stacking Glass mat-reinforced sheet GMT, SMC, TMC Thermoforming Hot pressing Yes... [Pg.3037]

In this study, the overall stress in the Ta/Cu film stack is seen to be appreciably less than the overall stress in the Ti/Ni/Ag metal stack. Figure 3 shows the bow measurement of two identical 200mm wafers, one with the Ta/Cu backmetal stack and... [Pg.187]

A SEM analysis was done across the cross section of sample 3. It shows a typical multilayered structure with thin films stacked onto one another. A dense layer of a-Al203 formed, during the calcination after the coating of the catalyst, in between the HA layer and the metal bulk. EDX analysis distinguishes the interfaces between the layers. The catalyst layer is thirmer than 10 pm, while the medium layer is around 1-3 pm. [Pg.669]

The samples for SANS were prepared by dissolving 30 wt% PSD and 70 wt% PVME in toluene. A thin film (0.1 mm) was cast and dried under vacuum. Disks were cut from the film, stacked and hot pressed at 120°C into spacer rings. The disks were sealed under high vacuum and gamma irradiated to 1250 kGy at 45°C. [Pg.842]

Figure 9.4 Schematic showing the transmission and reflectivity of light incident on a film stack of top antireflection coating (medium 2) coated on top of a photoresist film (medium 3) at normal incidence. The medium above the top antireflection coating is air (medium 1). Figure 9.4 Schematic showing the transmission and reflectivity of light incident on a film stack of top antireflection coating (medium 2) coated on top of a photoresist film (medium 3) at normal incidence. The medium above the top antireflection coating is air (medium 1).
Figure 9.17 Reflectance of TE, TM, and average TE-TM polarization states obtained on optimized multilayer BARC at NA 1.2 and under (a) normal incidence and (b) full angular incidence 0-45 deg. (c) Thickness and optical properties (n and k) values of film stack used in the simulation of (b). The thickness and n and k values of the antireflection coating used in (a) are 35 nm, 1.70, and 0.20, respectively. (Courtesy of B.W. Smith.)... Figure 9.17 Reflectance of TE, TM, and average TE-TM polarization states obtained on optimized multilayer BARC at NA 1.2 and under (a) normal incidence and (b) full angular incidence 0-45 deg. (c) Thickness and optical properties (n and k) values of film stack used in the simulation of (b). The thickness and n and k values of the antireflection coating used in (a) are 35 nm, 1.70, and 0.20, respectively. (Courtesy of B.W. Smith.)...
Figure 12.3 Film stack showing the geometry used in deriving the standing wave equations for a normally incident electric field. Figure 12.3 Film stack showing the geometry used in deriving the standing wave equations for a normally incident electric field.
The last step calls for the development of the HOL polymer/photoresist film stack in an aqueous basic solvent such as 0.26 N tetramethylammonium hydroxide. This will dissolve and wash away the exposed part of the resist, comprising the carboxylic acid moieties. The preferential diffusion of the HOL into the exposed area of the photoresist results in deprotection of the photoresist polymer at the edge of the unexposed features, leading to their dissolution. This is the basis of the CD reduction, improved process window, and exposure latitude, and smoother sidewall and line edge profile of photoresist features processed with HOL relative to the features processed without HOL. ... [Pg.808]

More recently, the analysis of pristine PPV has been supplemented by x-ray data obtained by Chen et al. [273] on a four-circle diffractometer, thus avoiding some of the complications inherent in the use of electron diffraction data, such as dynamical effects and the lack of absolute intensities. The samples consist of multilayers of stretched (///o = 10) film stacked to a thickness not exceeding 200 pm a c-axis mosaic spread of less than 7° is determined from equatorial reflections. Since crystallographic results have been found to vary somewhat among the investigations... [Pg.48]


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See also in sourсe #XX -- [ Pg.38 , Pg.39 , Pg.47 ]




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Film-stacking

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