Polymer blend transistor

The first demonstration of a polymer blend transistor with appreciable ambipolar mobUities was accomplished by Meijer et al. by blending poly(2-methoxy-5-(3,7-dimethyloctoxy)- p-phenylene vinylene) (OCiCio-PPV) and PCBM (Figure 16.12a) [13]. Here, the hole and electron mobilities reached 7 x 10 cm (V s ) and 3 x 10 cm (V s ), respectively. A representation of the interpenetrating network and cross-section of the field-effect transistor is presented in Figure 16.12a. For both materials the charge injection comes from... 

Lu G, Blakesley J, Himmelberger S, Pingel P, Frisch J, Lieberwirth I, Salzmann I, Oehzelt M, Di Pietro R, Salleo A et al (2013) Moderate doping leads to high performance of semicon-ductor/insulator polymer blend transistors. Nat Commun 4 1588... 

Abstract. The design and synthesis of new molecular synthons for vapor-phase self-assembled nanodieletrics and silane crosslinkers for crosslinked polymer blend dielectrics is described. These dielectric films exhibit excellent dielectric properties with tunable thicknesses and capacitance values. These new gate dielectric materials are integrated into thin-film transistors based both p- and n-type organic semiconductors. 

Babel, A., Wind, J.D. and Jenekhe, S.A., Ambipolar charge transport in air-stable polymer blend thin-film transistors, Adv. Func. Mater, 14, 891-898, 2004. 

It has been known since the early stage of conducting polymer research that polyandine fibrils of 100 nm in diameter can naturally form on the surface of an electrode [4,40-45] with a compact microspheriod underlayer. Some recent work demonstrates that pure polyaniline nanofibers can be obtained without the need for any template by controlling the polymerization rate [46—48]. Although this process is not readily scalable from a materials point of view, such work could be very important for making functional devices, since nanofiber-coated electrodes can be used as a platform to fabricate sensors and transistors. Interconnected network-like structures with polyaniline nanoKnkers 10-50 nm wide have also been identified in polymer blends [49-51]. 

QIU 11] Qiu L., Xu Q., Lee W.H. et al., Organic thin-film transistors with a photo-pattemable semiconducting polymer blend . Journal of Materials Chemistry, vol. 21, pp. 15637-15642, 2011. 

Several organics, e.g. pristine poly(3-octylthiophene), polyfluorene, bifunctional spiro compounds and polyphenyleneethynylene derivative, have been used for fabricating photOFETs. Responsivity as high as 0.5-1 A/W has been achieved in some of these transistors. We have already discussed the bulk heterojunction concept in Chapter 5. The bulk heterojunctions are fabricated using acceptor materials with high electron affinity (such as C<5o or soluble derivatives of C6o) mixed with conjugated polymers as electron donors. PhotOFETs based on conjugated polymer/fullerene blends are expected to show... 

N. Marjanovic, et al., Photoresponse of organic field-effect transistors based on conjugated polymer/fullerene blends, Organic Electronics 1 (2006) 188-194. 

Shkunov, M., Simms, R., Heeney, M., Tierney, S. and McCulloch, I., Ambipolar field-effect transistors based on solution-processable blends of thieno 2,3-b thiophene terthiophene polymer and methanofullerenes, Adv. Mater, 17, 2608, 2005. 

Russell, D.M. et al., Blends of semiconductor polymer and small molecule molecular crystals for improved-performance tliin-film transistors, App. Phys. Lett 87, 222109, 2005. 

N. Marjanovic, T. B. Singh, G. Dennler, S. Giines, H. Neugebauer, N. S. Sariciftci, R. Schwodiauer, S. Bauer, Photoresponse of Organic Field-Effect Transistors Based on Conjugated Polymer/Fullerene Blends. Org. Electron. 2006,7, 188-194. 

Babel A, Li D., Xia Y, and Jenekhe S.A., Electrospun nanofibers of blends of conjugated polymers Morphology, optical properties, and field-effect transistors, Macromolecules, 2005, 38,4705-4711. 

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