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Fermi effects

Szilard L, Chalmers TA (1934) Chemical separation of the radioactive element from its bombarded isotope in the Fermi effect. Nature 134 462 Tanihata I, Hamagaki H, Hashimoto O et al (1985) Measurements of interaction cross sections and nuclear radii in the light p-shell region. Phys Rev Lett 55 2676... [Pg.36]

While field ion microscopy has provided an effective means to visualize surface atoms and adsorbates, field emission is the preferred technique for measurement of the energetic properties of the surface. The effect of an applied field on the rate of electron emission was described by Fowler and Nordheim [65] and is shown schematically in Fig. Vlll 5. In the absence of a field, a barrier corresponding to the thermionic work function, prevents electrons from escaping from the Fermi level. An applied field, reduces this barrier to 4> - F, where the potential V decreases linearly with distance according to V = xF. Quantum-mechanical tunneling is now possible through this finite barrier, and the solufion for an electron in a finite potential box gives... [Pg.300]

The idea of having two distinct quasi-Fermi levels or chemical potentials within the same volume of material, first emphasized by Shockley (1), has deeper implications than the somewhat similar concept of two distinct effective temperatures in the same block of material. The latter can occur, for example, when nuclear spins are weakly coupled to atomic motion (see Magnetic spin resonance). Quasi-Fermi level separations are often labeled as Im p Fermi s name spelled backwards. [Pg.116]

Band gap engineetring confined hetetrostruciutres. When the thickness of a crystalline film is comparable with the de Broglie wavelength, the conduction and valence bands will break into subbands and as the thickness increases, the Fermi energy of the electrons oscillates. This leads to the so-called quantum size effects, which had been precociously predicted in Russia by Lifshitz and Kosevich (1953). A piece of semiconductor which is very small in one, two or three dimensions - a confined structure - is called a quantum well, quantum wire or quantum dot, respectively, and much fundamental physics research has been devoted to these in the last two decades. However, the world of MSE only became involved when several quantum wells were combined into what is now termed a heterostructure. [Pg.265]

Our treatment so far has dealt with non-interacting electrons, yet we know for sure that electrons do interact with each other. Dirac (1930b) studied the effects of exchange interactions on the Thomas-Fermi model, and he soon discovered that this effect could be modelled by adding an extra term... [Pg.214]

To summarize we have reproduced the intricate structural properties of the Fe-Co, Fe-Ni and the Fe-Cu alloys by means of LMTO-ASA-CPA theory. We conclude that the phase diagram of especially the Fe-Ni alloys is heavily influenced by short range order effects. The general trend of a bcc-fcc phase transition at lower Fe concentrations is in accordance with simple band Ailing effects from canonical band theory. Due to this the structural stability of the Fe-Co alloys may be understood from VGA and canonical band calculations, since the common band model is appropriate below the Fermi energy for this system. However, for the Fe-Ni and the Fe-Cu system this simple picture breaks down. [Pg.61]

In the weak-coupling limit unit cell a (, 0 7a for fra/u-polyacetylene) and the Peierls gap has a strong effect only on the electron states close to the Fermi energy eF-0, i.e., stales with wave vectors close to . The interaction of these electronic states with the lattice may then be described by a continuum, model [5, 6]. In this description, the electron Hamiltonian (Eq. (3.3)) takes the form ... [Pg.47]

The metallic electrode materials are characterized by their Fermi levels. The position of the Fermi level relative to the eneigetic levels of the organic layer determines the potential barrier for charge carrier injection. The workfunction of most metal electrodes relative to vacuum are tabulated [103]. However, this nominal value will usually strongly differ from the effective workfunction in the device due to interactions of the metallic- with the organic material, which can be of physical or chemical nature [104-106]. Therefore, to calculate the potential barrier height at the interface, the effective work function of the metal and the effective ionization potential and electron affinity of the organic material at the interface have to be measured [55, 107],... [Pg.160]

A semiconductor can be described as a material with a Fermi energy, which typically is located within the energy gap region at any temperature. If a semiconductor is brought into electrical contact with a metal, either an ohmic or a rectifying Schouky contact is formed at the interface. The nature of the contact is determined by the workfunction, (the energetic difference between the Fermi level and the vacuum level), of the semiconductor relative to the mclal (if interface effects are neglected - see below) 47J. [Pg.469]

It is clear that, for electrons with parallel spins, the auxiliary condition (Eq. II.2) gives rise to a correlation effect which very closely resembles the correlation effect coming from the Coulomb repulsion in the Hamiltonian for = 2 the Fermi hole replaces to a certain degree the Coulomb hole. This means that, if... [Pg.218]

Figure 5.7. Schematic representation of the definitions of work function O, chemical potential of electrons i, electrochemical potential of electrons or Fermi level p = EF, surface potential %, Galvani (or inner) potential Figure 5.7. Schematic representation of the definitions of work function O, chemical potential of electrons i, electrochemical potential of electrons or Fermi level p = EF, surface potential %, Galvani (or inner) potential <p, Volta (or outer) potential F, Fermi energy p, and of the variation in the mean effective potential energy EP of electrons in the vicinity of a metal-vacuum interface according to the jellium model. Ec is the bottom of the conduction band and dl denotes the double layer at the metal/vacuum interface.
It will also be shown that the absolute electrode potential is not a property of the electrode but is a property of the electrolyte, aqueous or solid, and of the gaseous composition. It expresses the energy of solvation of an electron at the Fermi level of the electrolyte. As such it is a very important property of the electrolyte or mixed conductor. Since several solid electrolytes or mixed conductors based on ZrC>2, CeC>2 or TiC>2 are used as conventional catalyst supports in commercial dispersed catalysts, it follows that the concept of absolute potential is a very important one not only for further enhancing and quantifying our understanding of electrochemical promotion (NEMCA) but also for understanding the effect of metal-support interaction on commercial supported catalysts. [Pg.333]

Consequently the absolute potential is a material property which can be used to characterize solid electrolyte materials, several of which, as discussed in Chapter 11, are used increasingly in recent years as high surface area catalyst supports. This in turn implies that the Fermi level of dispersed metal catalysts supported on such carriers will be pinned to the Fermi level (or absolute potential) of the carrier (support). As discussed in Chapter 11 this is intimately related to the effect of metal-support interactions, which is of central importance in heterogeneous catalysis. [Pg.358]


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See also in sourсe #XX -- [ Pg.12 ]




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Activation energy, Fermi level effect

Effective Treatment of Fermi Resonances

Fermi Sea Correlation Effects

Fermi quantization effects

Fermi surface measurements effect

Nuclear effects Fermi motion

Resonance effects infrared, Fermi

Spin-orbit/Fermi contact effects

Spin-orbit/Fermi contact effects shieldings

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