Fabrication methods chemical vapor deposition

Fabrication methods that are generaby used to make these junctions are diffusion, ion implantation, chemical vapor deposition (CVD), vacuum deposition, and bquid-phase deposition for homojunctions CVD, vacuum deposition, and bquid-phase deposition for heterojunctions and vacuum deposition for Schottky and MIS junctions. 

DEC coating was first prepared by Aisenberg and Chabot using ion beam deposition in 1971 [2]. At present, PVD, such as ion beam deposition, sputtering deposition, cathodic vacuum arc deposition, pulsed laser deposition, and CVD, like plasma enhanced chemical vapor deposition are the most popular methods to be selected to fabricate DEC coatings. 

Alternative lower cost fabrication methods to sintering and electrochemical vapor deposition (EVD) are receiving more attention. These methods include plasma spraying and chemical vapor deposition (CVD). Many development projects are being conducted in fabrication techniques. Examples of some of the work follow. 

Fabrication methods include thermal evaporation, sputtering, magnetron sputtering, pulsed laser evaporation, molecular beam epitaxy, chemical vapor deposition, electrolytic and electroless deposition, and growth from solution. 

Epitaxial Layers. Epitaxial deposition produces a single crystal layer on a substrate for device fabrication or a layer for multilevel conductive interconnects which may be of much higher quality than the substrate. The epitaxial layer may have a different dopant concentration as a result of introducing the dopant during the epitaxial growth process or may have a different composition than the substrate as in silicon on sapphire. Methods used for epitaxial growth include chemical vapor deposition (CVD), vapor phase epitaxy (VPE), liquid phase epitaxy (LPE), molecular beam epitaxy (MBE) and solid phase epitaxy (SPE). 

Ceramic and semiconductor thin films have been prepared by a number of methods including chemical vapor deposition (CVD), spray-coating, and sol-gel techniques. In the present work, the sol-gel method was chosen to prepare uniform, thin films of titanium oxides on palladium Titanium oxide was chosen because of its versatility as a support material and also because the sol-gel synthesis of titania films has been clearly described by Takahashi and co-workers (22). The procedure utilized herein follows the work of Takahashi, but is modified to take advantage of the hydrogen permeability of the palladium substrate. Our objective was to develop a reliable procedure for the fabrication of thin titania films on palladium, and then to evaluate the performance of the resulting metalloceramic membranes for hydrogen transport and ethylene hydrogenation for comparison to the pure palladium membrane results. 

Stephan was the first to attempted direct synthesis of the B and N multi walled carbon nanotubes (BCN-MWNTs) in 1994 [15-17]. Since then, considerable progress has been made in the synthesis of BCN-MWNTs by different means of arc-discharge [16-18], laser ablation [18-20], piyolysis methods [18,21], and chemical vapor deposition [18,20-24]. Aligned BNC nanotubes have been sueeessfully fabricated by bias assisted hot filament chemieal vapor deposition [27,28]. Up to now, the only existing BCN-SWNTs synthesis was achieved via an... 

We can easily classify the fabrication methods for SiC as conventional and nonconventional. The former category would include chemical vapor deposition while the latter would include controlled pyrolsis of polymeric precursors. There is yet another important type of SiC available for reinforcement purposes, SiC whiskers. We give a brief description of these. 

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