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Energy excess

Atom abstraction occurs when a dissociation reaction occurs on a surface in which one of the dissociation products sticks to the surface, while another is emitted. If the chemisorption reaction is particularly exothennic, the excess energy generated by chemical bond fomiation can be chaimelled into the kinetic energy of the desorbed dissociation fragment. An example of atom abstraction involves the reaction of molecular halogens with Si surfaces [27, 28]. In this case, one halogen atom chemisorbs while the other atom is ejected from the surface. [Pg.295]

The agreement is excellent up to a 1 molar concentration. The excess energies for 1-1, 2-1, 2-2 and 3-1 charge types calculated from the MS and HNC approximations are shown in figure A2.3.13. The Monte Carlo... [Pg.495]

Figure A2.3.13 The excess energy of 1-1, 2-1, 3-1 and 2-2 RPM electrolytes in water at 25°C. The frill and dashed curves are from the HNC and MS approximations, respectively. The Monte Carlo results of Card and Valleau [63] for the 1-3 and 2-2 charge types are also shown. Figure A2.3.13 The excess energy of 1-1, 2-1, 3-1 and 2-2 RPM electrolytes in water at 25°C. The frill and dashed curves are from the HNC and MS approximations, respectively. The Monte Carlo results of Card and Valleau [63] for the 1-3 and 2-2 charge types are also shown.
Either the same or different approximations may be used to treat the binding at r = L and the remaining electrical interactions between the ions. The excess energy of the sticky electrolyte is given by... [Pg.501]

The PY approximation for die binding leads to negative results for X the HNC approximation for this is satisfactory. Figure A2.3.18 shows the excess energy as a fiinction of the weak electrolyte concentration for the RPM and SEM for a 2-2 electrolyte. [Pg.501]

Figure A2.3.18 The excess energy in units of NkT as a fiinction of the concentration for the RPM and SEM 2-2 electrolyte. The curves and points are results of the EfNC/MS and HNC approximations, respectively, for the binding and the electrical interactions. The ion parameters are a = 4.2 A, and E = 73.4. The sticking coefficients = 1.6x10 and 2.44x 10 for L = all and a/3, respectively. Figure A2.3.18 The excess energy in units of NkT as a fiinction of the concentration for the RPM and SEM 2-2 electrolyte. The curves and points are results of the EfNC/MS and HNC approximations, respectively, for the binding and the electrical interactions. The ion parameters are a = 4.2 A, and E = 73.4. The sticking coefficients = 1.6x10 and 2.44x 10 for L = all and a/3, respectively.
In contrast to the bimoleciilar recombination of polyatomic radicals ( equation (A3.4.34)1 there is no long-lived intennediate AB smce there are no extra intramolecular vibrational degrees of freedom to accommodate the excess energy. Therefore, the fonnation of the bond and the deactivation tlirough collision with the inert collision partner M have to occur simultaneously (within 10-100 fs). The rate law for trimoleciilar recombination reactions of the type in equation (A3.4.47) is given by... [Pg.770]

Lavrich D J, Buntine M A, Serxner D and Johnson M A 1993 Excess energy-dependent photodissociation probabilities for Ot in water clusters O, I 1i Chem. Rhys. 99 5910-16... [Pg.821]

What attributes of bimolecular and unimolecular reactions are of interest Most important is the identity of the products, without which any further characterization is impossible. Once this is established, more detailed issues can be addressed. For example, m any exothenuic reaction, one would like to detenuine how the excess energy is... [Pg.872]

There are many ways of increasing tlie equilibrium carrier population of a semiconductor. Most often tliis is done by generating electron-hole pairs as, for instance, in tlie process of absorjition of a photon witli h E. Under reasonable levels of illumination and doping, tlie generation of electron-hole pairs affects primarily the minority carrier density. However, tlie excess population of minority carriers is not stable it gradually disappears tlirough a variety of recombination processes in which an electron in tlie CB fills a hole in a VB. The excess energy E is released as a photon or phonons. The foniier case corresponds to a radiative recombination process, tlie latter to a non-radiative one. The radiative processes only rarely involve direct recombination across tlie gap. Usually, tliis type of process is assisted by shallow defects (impurities). Non-radiative recombination involves a defect-related deep level at which a carrier is trapped first, and a second transition is needed to complete tlie process. [Pg.2883]

The excess energies can be measured for a known by essentially a stopping potential method, giving a spechum. This spectrum is then matched with calculated orbital energies (eigenvalues) derived from molecular orbital calculations. [Pg.323]

An analyte in an excited state possesses an energy, E2, that is greater than that when it is in a lower energy state, Ei. When the analyte returns, or relaxes to a lower energy state the excess energy, AE,... [Pg.423]

The lifetime of an analyte in the excited state. A, is short typically 10 -10 s for electronic excited states and 10 s for vibrational excited states. Relaxation occurs through collisions between A and other species in the sample, by photochemical reactions, and by the emission of photons. In the first process, which is called vibrational deactivation, or nonradiative relaxation, the excess energy is released as heat thus... [Pg.423]

In either case the excess energy is used up in the chemical reaction or released as heat. [Pg.423]

In the third mechanism excess energy is released as a photon of electromagnetic radiation. [Pg.423]

Another form of radiationless relaxation is internal conversion, in which a molecule in the ground vibrational level of an excited electronic state passes directly into a high vibrational energy level of a lower energy electronic state of the same spin state. By a combination of internal conversions and vibrational relaxations, a molecule in an excited electronic state may return to the ground electronic state without emitting a photon. A related form of radiationless relaxation is external conversion in which excess energy is transferred to the solvent or another component in the sample matrix. [Pg.425]

Emission of an alpha or beta particle often produces an isotope in an unstable, high-energy state. This excess energy is released as a gamma ray, y, or an X-ray. Gamma ray and X-ray emission may also occur without the release of alpha or beta particles. [Pg.642]

Af higher frequencies fhe excess energy of fhe photons is converted info kinetic energy of fhe phofoelectrons... [Pg.289]

Ek-El,. This energy is then used up in ejecting an Auger electron from the Lu orbital, any excess energy being converted into kinetic energy of the electron. [Pg.319]

Figure 9.50(a) illustrates the ionization process in a UPS experiment. In this type of experiment the incident radiation always has much more energy than is necessary to ionize the molecule M into either the zero-point level or a vibrationally excited level of M. The excess energy is then removed as kinetic energy of the photoelectron. [Pg.402]

An alternative mechanism of excess energy release when electron relaxation occurs is through x-ray fluorescence. In fact, x-ray fluorescence favorably competes with Auger electron emission for atoms with large atomic numbers. Figure 16 shows a plot of the relative yields of these two processes as a function of atomic number for atoms with initial K level holes. The cross-over point between the two processes generally occurs at an atomic number of 30. Thus, aes has much greater sensitivity to low Z elements than x-ray fluorescence. [Pg.280]


See other pages where Energy excess is mentioned: [Pg.160]    [Pg.46]    [Pg.243]    [Pg.296]    [Pg.494]    [Pg.622]    [Pg.771]    [Pg.799]    [Pg.915]    [Pg.1022]    [Pg.1023]    [Pg.1339]    [Pg.2890]    [Pg.302]    [Pg.303]    [Pg.303]    [Pg.304]    [Pg.304]    [Pg.317]    [Pg.323]    [Pg.294]    [Pg.567]    [Pg.586]    [Pg.317]    [Pg.4]    [Pg.7]    [Pg.317]    [Pg.88]    [Pg.279]   
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See also in sourсe #XX -- [ Pg.306 ]

See also in sourсe #XX -- [ Pg.381 , Pg.382 ]

See also in sourсe #XX -- [ Pg.173 , Pg.174 , Pg.184 ]




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Activation energy excess

Activity coefficient from excess Gibbs energy

Activity coefficient multicomponent excess Gibbs energy

Activity coefficient-models multicomponent excess Gibbs energy

And excess free energy

Areal surface excess energy

Binary excess Gibbs free energy

Charge excess energy

Computational methods Excess free energy

Correlation functions excess free energy

Density functional theory excess free energy

Dissipation of excess energy

Energy excessive

Energy excessive

Energy, configurational excess

Excess Gibbs Energy and Activity Coefficient Equations

Excess Gibbs energy

Excess Gibbs energy Margules

Excess Gibbs energy Margules equations for

Excess Gibbs energy NRTL equation for

Excess Gibbs energy Porter equation for

Excess Gibbs energy Redlich/Kister

Excess Gibbs energy This page has been reformatted by Knovel to provide easier navigation

Excess Gibbs energy UNIQUAC

Excess Gibbs energy Wilson

Excess Gibbs energy Wilson equations for

Excess Gibbs energy and the activity coefficient

Excess Gibbs energy empirical expressions for

Excess Gibbs energy equivalent

Excess Gibbs energy equivalent activity coefficients

Excess Gibbs energy local-composition expressions for

Excess Gibbs energy models

Excess Gibbs energy of an ideal dilute solution

Excess Gibbs energy terms Links

Excess Gibbs energy van Laar equations for

Excess Gibbs free energy

Excess Gibbs free energy Margules

Excess Gibbs free energy local composition

Excess Gibbs free energy of mixing

Excess Gibbs-energy Methods

Excess activation free energy

Excess binding energy

Excess compressibility free energy

Excess energies, alloys

Excess energy definition

Excess energy localization

Excess energy model

Excess excitation energy

Excess free energy interaction parameter

Excess free energy of compound

Excess integral molar free energy

Excess interfacial free energy

Excess internal energy

Excess of Internal Energy Caused by Inelastic Collisions

Excess of electronic energy

Excess properties Gibbs energy

Excess surface energy

Excess surface free energy

Excess thermodynamic function internal energy

Excess thermodynamic functions energy

Excess thermodynamic functions free energy

Explicit Expression for the Excess Free Energy

Free energy excess

Gibbs energy excess function

Gibbs energy excess mixing

Gibbs energy excess-property relation

Helmholtz free energy excess

Index excess energy dependence

Margules expression, excess free energy

Micelle excess free energy

Mixing Rules from Models for Excess Gibbs Energy

Mixing excess free energy, binary

Mixing, enthalpy excess Gibbs free energy

Mixtures molecular excess free energy

Molecular excess free energy

Partial molar excess free energy

Potential energy, excess

Pressure on the Excess Free Energy

Regular solution excess Gibbs energy

Several Activity Coefficient (Excess Free-Energy) Models

Solvation, surface excess free energy

Specific excess surface energies

Surface excess Helmholtz free energy

Surface excess internal energy

Thermodynamics excess Gibbs energy

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