Excess energies, alloys

Excessive energy due to bond contraction and bond nature alteration reinforces a compacted interface, which is applicable to multi-layers, alloys, compounds, and impurities. 

Lead, excess entropy of solution of noble metals in, 133 Lead-thalium, solid solution, 126 Lead-tin, system, energy of solution, 143 solution, enthalpy of formation, 143 Lead-zinc, alloy (Pb8Zn2), calculation of thermodynamic quantities, 136 Legendre expansion in total ground state wave function of helium, 294 Lennard-Jones 6-12 potential, in analy-... 

Silver-copper, energy of solutions, 142 Silver-gold, excess entropy, 132, 136 excess free energy, 136 Silver-lead, alloy (AgsPb5), calculation of thermodynamic quantities, 136 Silver-zinc, alloy (Ag5Zn5), 129... 

The third term of Eq. (14), Gxs, is the excess term of the free energy. Although several of the aluminum alloys considered here form ordered intermetallic compounds, a regular-solution type model was used to describe their excess free energy. Gxs is described by the following Redlich-Kister polynomial,... 

Thorium metal is generally prepared by the metallothermic reduction of its halides (Section II,A). Very high-quality metal containing a total of 250 ppm impurities has been prepared at the Ames Laboratory of the Department of Energy (98, 99). These workers reduced ThCl4 with excess Mg metal to yield a Th-Mg alloy, which was then heated in vacuo to remove the excess Mg (55) ... 

Figure 1. (a) Equilibrium surface atom fractions of Bi and Ni, on the (111) surface, for a Pb-5at%Bi-0.04at%Ni alloy, as a function of temperature, after ref 14. The vertical line indicates the transition temperature, (b) Surface excess free energy ofthe (111) surface, vs. temperature, corresponding to (a), afterref 14. (c) Same as (a), comparing the surface excess free energies of 111, 100 and 110 afterref 17. 

In this chapter, the effect of preexcitation with the light of band-gap energy on trapping and thermal generation is examined in selenium and selenium-rich As-Se alloy films by several techniques. Results suggest that excess carrier trapping and dark-carrier generation are controlled by deep defect centers whose population can temporarily be altered by photoexcitation. 

---