Etched films, spectroscopy

A Dektak siuface profilometer was used to measure the etch rates. The profiles of the etched films were observed by field emission scanning electron microscopy (FESEM). In addition, x-ray photoelectron spectroscopy PCPS) was utilized to examine the existence of possible etch products or redeposited materials, and to elucidate the etch mechanism of Co2MnSi magnetic films in a CVOa/Ar plasma. 

Infrared spectroscopy, including Fourier-transform infrared (FTIR) spectroscopy, is one of the oldest techniques used for surface analysis. ATR has been used for many years to probe the surface composition of polymers that have been surface-modified by an etching process or by deposition of a film. RAIR has been widely used to characterize thin films on the surfaces of specular reflecting substrates. FTIR has numerous characteristics that make it an appropriate technique for... 

In order to confirm the formation of nanodots, the fabricated nanodot arrays on a substrate were examined using energy dispersive spectroscopy (EDS). The EDS analysis of niobium oxide arrays on Si film before etching (Fig. 2(a)) was shown in Fig. 3(a). The Si peak as well as Nb and O peaks was observed because niobium oxide on Si film was so thin. 

A typical surface profile is shown on the video display. Vertical resolution of 5 A and horizontal resolution of 400 A is claimed. As long as the deposited film can be etched off the substrate without etching the substrate, this technique can be used for any thin film. Its primary utility is for R D studies, as it is clearly not a production technique. The only film for which it is not suited is an epi silicon film on a single-crystal silicon substrate. A technique for measuring the thickness of these films will be described in the section on Infrared Spectroscopy. 

Sample preparation. Thin films of PBTMSS for Rutherford backscattering spectroscopy (RBS) and general plasma etching studies were spun on polished silicon wafers from a 3.5% solution in chlorobenzene using a photoresist spinner. The films were baked for 10 to 20 min. at 105-120 X in air. PBTMSS films for Auger electron spectroscopy (AES) studies were spin-coated on silicon wafers previously coated with 2000 A of gold. Films for IR studies were spin-coated onto NaCl plates. 

Infrared spectroscopy. The IR transmission spectra of PBTMSS films (original thickness 3500 A) in the range 900 to 1200 cm after passivation by various methods are shown in Figure 6. The difference spectra between the initial and etched (for 1 and 10 min.) films corrected for changes in film thickness are also plotted in Figure 6. 

This chapter describes preparation of Si02 thin film by the sol-gel method using photoirradiation and the effect of heat treatment on the molecular structure of the Si02 in the film examined using Raman and nuclear magnetic resonance (NMR) spectroscopy. The relationships between the molecular characteristics and physical properties such as hardness and etch rate are derived, and applications for the new process are described. 

Figure 2.17. Electron spectroscopy for chemical analysis ESCA) spectra of organometallic polymer films before and after exposure to oxygen plasma. The silicon 2p transition page 99) is shifted from 99.7 to 102.4 eV. The magnitude of the shift is consistent uMh conversion to SiO, where x is between 1.5 and 2. The Sn 3d transitions of the organotin compound above) undergo a similar shift 1.7 eV), consistent with generation of a SnOx surface, where x is again between 1.5 and 2. Argon sputter etching followed by ESCA analysis indicates that these oxide films are less than 100 A thick.

Hosokawa, Y., Yashiro, M., Asahi, T. and Masuhara, H. (2001) Photothermal conversion dynamics in femtosecond and picosecond discrete laser etching of Cu-phfhalocyanine amorphous film analysed by ultrafast UV-VIS absorption spectroscopy. J. Photochem. Photobiol., A, 142, 197-207. 

Spectroscopy. Transmission and ATR IR spectra were obtained with a Perkin-Elmer Model 180 or 621 spectrometer. Absorption spectra were obtained on a Cary 14 spectrophotometer, while ESR spectra were obtained with a Varlan V-4502 spectrometer in the manner described elsewhere ( ). X-ray photoelectron spectra of the etched and unetched films were provided by Surface Science Laboratories, Palo Alto, Calif., using a Hewlett-Packard Model 5950 ESCA spectrometer. Some films were also examined with an International Scientific Instruments Model MSM-2 "Minl-Sem" scanning electron microscope. 

Nishizawa, J., and N. Hayasaka In situ observation of plasmas for dry etching by IR spectroscopy and probe methods. Thin Solid Films,... 

The FTIR spectrum of the PTFE film deposited by laser ablation was identical to that of the target [54], but that of the film produced by SR etching showed some visible differences (see Fig. 29). Obviously, the C-F2 deformation bands at 640 and 513 cm-1 appear much smaller in the bottom trace. To understand why these 640 and 513 cm-1 bands were so small in the SR case, we measured both normal and oblique transmission of FTIR with an incident angle of 0 and 80° [58]. Two FTIR spectrometers (PERKIN-ELMER and JASCO) were used to measure spectra in the range 400-3000 cm-1. For a cross-check, the film was also deposited on a metallic surface and infrared reflection absorption spectroscopy [62] was carried out to confirm our oblique transmission measurements. Typical changes in the FTIR transmission... 

---