Etch mask

Polyimides, both photodefinable and nonphotodefinable, are coming iato iacreased use. AppHcatioas iaclude planarizing iatedayer dielectrics oa iategrated circuits and for interconnects, passivation layers, thermal and mechanical stress buffers ia packagiag, alpha particle barriers oa memory devices, and ion implantation (qv) and dry etching masks. 

In this report, the fabrication of Si nanodot arrays using niobium oxide nanopillars as an etching mask was performed by an inductively coupled plasma reactive ion etching (ICPRIE). 

The formation of Si nanodot arrays on a substrate was performed by ICPRIE of Si films using self-assembled niobium oxide pillars as an etching mask. The etch rates of niobium oxide pillars and Si films, and the etch selectivity of Si films to niobium oxide were investigated by varying etch parameters in a Ch/Ar gas. The main etch parameters used in this study were the concentration of CI2 gas, coil rf power, and dc-bias to substrate. 

Fig. 5.72 Underetching of etch mask during isotropic etching [2].

Fig. 12.7 InGaAsP/InP multi quantum well semiconductor structure process (a) Si02 etch mask deposition (b) PMMA spin coating (c) E beam lithography and develop (d) Si02 etch (e) PMMA stripping (f) InGaAsP membrane etch (g) Si02 stripping (h) Chip flipping and bonding to sapphire (i) InP substrate etch (j) Adhesive etch...

The procedure followed to fabricate the annular Bragg resonators is as follows. First, an etch mask consisting of 120 nm of PECVD Si02 was deposited on the... 

Films of polyphthalaldehyde, sensitized by cationic photoinitiators, have been imaged at 2-5-mJ/cm in the deep ultraviolet (DUV) (see Section 3.10), at 1 pC/cm (20 kV) electron beam radiation and at an unspecified dose of Al-A x-ray radiation. The ultimate utility of this "self-developing" resist system will depend upon its efficacy as an etch barrier. It seems clear that such materials would not serve as adequate etch masks for... 

A representative sample of terpolymers was exposed to a variety of etchants for polysilicon and silicon dioxide, and the results are given in Table V. The ratio of the etch rate of the substrate to the etch rate of the resist must be at least 2 1 for the resist to be a viable etch mask. Inspection of Table V, shows that the materials examined are unacceptable for only the QFj — CF3CI (4 1) plasma. The etch rates are comparable to those for PMMA the a-keto-oxime exhibits essentially no effect on that rate and the nitrile affords a slight decrease in the plasma etch rate. The etch rates of some commercially available materials are shown for comparison. 

ABSTRACT A new class of photosensitive, thermally stable polymers containing photo-labile aromatic amide linkages has been prepared. These polymers can be used to provide lithographic relief images for printing, etch masks for microcircuit fabrication and as contrast media for optical information storage. 

Curing is first performed at 200 C in air and then at 350 C in a nitrogen atmosphere. Through-holes are etched using a negative photoresist as the etching mask and an etchant containing hydrazine hydrate and ethylenediamine. Next, the second level metallization is formed. PIQ film is then formed on the second level metallization. This acts as a passivation film. 

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