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Electrons nonequilibrium behavior

This interplay between the action of the electric field and the elastic and inelastic collision processes causes the electron component to generally reach a state far from the thermodynamic equilibrium. This nonequilibrium behavior of the electron component cannot be described using the well-developed methods of thermodynamics for equilibrium conditions. Thus, the requirement arises that the state of the electron component established in anisothermal plasmas or its temporal and spatial evolution can be described only on an appropriate microphysical basis. [Pg.20]

In this chapter we will also consider the first basic aspects of the dynamical, i.e., nonequilibrium, behavior of liquid media. The subject embraces a very large variety of phenomena, requiring different formulation of the continuum models. We cite here an aspect, relatively simple, related to a phenomenon occurring in a span of time relatively short with respect to the characteristic relaxation times (CRT) of the solvent the vertical electronic transitions in solutes (Basilevsky and Chudinov 1990 BQm and Hynes 1990 Marcus 1992). [Pg.1046]

A method is outlined by which it is possible to calculate exactly the behavior of several hundred interacting classical particles. The study of this many-body problem is carried out by an electronic computer which solves numerically the simultaneous equations of motion. The limitations of this numerical scheme are enumerated and the important steps in making the program efficient on the computer are indicated. The applicability of this method to the solution of many problems in both equilibrium and nonequilibrium statistical mechanics is discussed. [Pg.65]

In this contribution, we describe and illustrate the latest generalizations and developments[1]-[3] of a theory of recent formulation[4]-[6] for the study of chemical reactions in solution. This theory combines the powerful interpretive framework of Valence Bond (VB) theory [7] — so well known to chemists — with a dielectric continuum description of the solvent. The latter includes the quantization of the solvent electronic polarization[5, 6] and also accounts for nonequilibrium solvation effects. Compared to earlier, related efforts[4]-[6], [8]-[10], the theory [l]-[3] includes the boundary conditions on the solute cavity in a fashion related to that of Tomasi[ll] for equilibrium problems, and can be applied to reaction systems which require more than two VB states for their description, namely bimolecular Sjy2 reactions ],[8](b),[12],[13] X + RY XR + Y, acid ionizations[8](a),[14] HA +B —> A + HB+, and Menschutkin reactions[7](b), among other reactions. Compared to the various reaction field theories in use[ll],[15]-[21] (some of which are discussed in the present volume), the theory is distinguished by its quantization of the solvent electronic polarization (which in general leads to deviations from a Self-consistent limiting behavior), the inclusion of nonequilibrium solvation — so important for chemical reactions, and the VB perspective. Further historical perspective and discussion of connections to other work may be found in Ref.[l],... [Pg.259]

In a number of cases, however, these changes are little or, at least, do not have a direct effect on the electrochemical behavior of a system here the generation of nonequilibrium electron-hole pairs in the semiconductor becomes the major effect (see, for example, Byalobzhesky, 1967 Oshe and Rosenfeld, 1978). [Pg.317]

Figure 8. Fluctuational behavior measured and calculated for an electronic model of the nonequilibrium system (17) with A = 0.264, D — 0.012. The man figure plots the prehistory probability density (pk x,t]Xf,0) and posthistory distribution to/from the remote state Xf — —0.63, t — 0.83, which lies on the switching line. In the top plane, the fluctuational (squares) and relaxational (circles) optimal paths to/from this remote state were determined by tracing the ridges of the distribution [62],... Figure 8. Fluctuational behavior measured and calculated for an electronic model of the nonequilibrium system (17) with A = 0.264, D — 0.012. The man figure plots the prehistory probability density (pk x,t]Xf,0) and posthistory distribution to/from the remote state Xf — —0.63, t — 0.83, which lies on the switching line. In the top plane, the fluctuational (squares) and relaxational (circles) optimal paths to/from this remote state were determined by tracing the ridges of the distribution [62],...
The electron-hole annihilation serves as decay process.) Figure 73 refers to Au-doped silicon. If the rate constant is tuned by a bias one can switch from an insulating to a conductive behavior (cf. nonequilibrium phase transformation). [Pg.157]

The macroscopic nonequilibrium properties of the electrons are critical to the global behavior of the plasma. Because of their large mean energy, the electrons are the only plasma component that is capable of causing inelastic collisions with atoms and molecules, thus leading to excitation, dissociation, or ionization. This is usually the basic process through which the first activation of the working gas takes place. As a result of this activation, other collision processes and chemical reactions between the activated heavy particles of the plasma are often initiated. [Pg.21]

These nuclear and electronic components, due to their different dynamic behavior, will give rise to different effects. In particular, the electronic motions can be considered as instantaneous and thus the part of the solvent response they originate is always equilibrated to any change, even if fast, in the charge distribution of the solute. On the contrary, solvent nuclear motions, by far slower, can be delayed with respect to fast changes, and thus they can give origin to solute-solvent systems not completely equilibrated in the time interval interested in the phenomenon under study. This condition of nonequilibrium will successively evolve towards a more stable and completely equilibrated state in a time interval which will... [Pg.62]

It is well known that defects play an important role in determining material properties. Point defects play a major role in all macroscopic material properties that are related to atomic diffusion mechanisms and to electronic properties in semiconductors. Line defects, or dislocations, are unquestionably recognized as the basic elements that lead to plasticity and fracture (Fig. 20.1). Although the study of individual solid-state defects has reached an advanced level, investigations into the collective behavior of defects under nonequilibrium conditions remain in their infancy. Nonetheless, significant progress has been made in dislocation dynamics and plastic instabilities over the past several years, and the importance of nonlinear phenomena has also been assessed in this field. Dislocation structures have been observed experimentally. [Pg.460]

These effects can also be seen as the response functions of the solvent to an external perturbation, and, if the latter is time dependent, such as an external homogeneous electric field which oscillates at frequency w, or a field produced by a subsystem undergoing a chemical reaction, the relaxation times related to each of these functions tk become the quantities which entirely define the solvent behavior. Thus it is to be expected that, as the frequency of the external field increases, nonequilibrium effects will appear successively in the different parts of the polarization. First the motions of molecules and ions (characteristic times above I0 s) will lag behind the variation of the field, next the atoms will not be able to follow the field (characteristic times 10 s) and finally, at very high frequencies, the field will change too fast for the electrons to follow it. [Pg.2554]

Just as the stabilization of adsorbed hydrogen was associated with a typically quantum-mechanical effect (a low probability of proton tunneling), the possibility of stabilization of the intermediate product (adsorbed chlorine) is also a quantum effect. It is due to the quantum-mechanical behavior of a chlorine ion that its coordinate virtually does not change during the first phase of the activation process, so that as a result of electron transition we get an adsorbed atom in an essentially nonequilibrium state, which is capable of rapid relaxation to a stable state. [Pg.177]


See other pages where Electrons nonequilibrium behavior is mentioned: [Pg.19]    [Pg.20]    [Pg.38]    [Pg.45]    [Pg.184]    [Pg.259]    [Pg.292]    [Pg.159]    [Pg.487]    [Pg.244]    [Pg.387]    [Pg.561]    [Pg.121]    [Pg.308]    [Pg.342]    [Pg.227]    [Pg.38]    [Pg.3149]    [Pg.120]    [Pg.465]    [Pg.267]    [Pg.561]    [Pg.83]    [Pg.387]    [Pg.263]   
See also in sourсe #XX -- [ Pg.20 , Pg.21 ]




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