Electron injecting

Figure C2.16.7. A schematic energy band diagram of a p-n junction witliout external bias (a) and under forward bias (b). Electrons and holes are indicated witli - and + signs, respectively. It should be remembered tliat tlie energy of electrons increases by moving up, holes by moving down. Electrons injected into tlie p side of tlie junction become minority carriers. Approximate positions of donor and acceptor levels and tlie Feniii level, are indicated.

A more effective carrier confinement is offered by a double heterostructure in which a thin layer of a low-gap material is sandwiched between larger-gap layers. The physical junction between two materials of different gaps is called a heterointerface. A schematic representation of the band diagram of such a stmcture is shown in figure C2.l6.l0. The electrons, injected under forward bias across the p-n junction into the lower-bandgap material, encounter a potential barrier AE at the p-p junction which inliibits their motion away from the junction. The holes see a potential barrier of... 

Efficiency. Efficiency of a device can be reported in terms of an internal quantum efficiency (photons generated/electrons injected). The external quantum efficiency often reported is lower, since this counts only those photons that escape the device. Typically only a fraction of photons escape, due to refraction and waveguiding of light at the glass interface (65). The external efficiency can be increased through the use of shaped substrates (60). 

Lp = D r ) is the minority carrier diffusion length for electrons in the -region, (0) is the minority carrier concentration at the boundary between the depletion layer and the neutral region. The sign of this equation indicates that electron injection into the -region results in a positive current flow from p to n a.s shown in Figure 7. 

As Figure 10 shows, the n—p—n bipolar junction transistor (BJT) may be regarded as two back-to-back p—n junctions separated by a thin base region (26,32,33). If external voltages are applied so that the base-emitter (BE) junction is forward biased and the base-coUector (BC) junction is reverse biased, electrons injected into the base from the emitter can travel to the base-coUector junction within their lifetime. If the time for minority carrier electrons to... 

These observations consummated in a growth model that confers on the millions of aligned zone 1 nanotubes the role of field emitters, a role they play so effectively that they are the dominant source of electron injection into the plasma. In response, the plasma structure, in which current flow becomes concentrated above zone 1, enhances and sustains the growth of the field emission source —that is, zone 1 nanotubes. A convection cell is set up in order to allow the inert helium gas, which is swept down by collisions with carbon ions toward zone 1, to return to the plasma. The helium flow carries unreacted carbon feedstock out of zone 1, where it can add to the growing zone 2 nanotubes. In the model, it is the size and spacing of these convection cells in the plasma that determine the spacing of the zone 1 columns in a hexagonal lattice. 

It would be preferable to incorporate both fluorescent and electron transport properties in the same material so as to dispense entirely with the need for electron-transport layers in LEDs. Raising the affinity of the polymer facilitates the use of metal electrodes other than calcium, thus avoiding the need to encapsulate the cathode. It has been shown computationally [76] that the presence of a cyano substituent on the aromatic ring or on the vinylene portion of PPV lowers both the HOMO and LUMO of the material. The barrier for electron injection in the material is lowered considerably as a result. However, the Wessling route is incompatible with strongly electron-withdrawing substituents, and an alternative synthetic route to this class of materials must be employed. The Knoevenagel condensation... 

For example, the //V characteristics of devices based on the aluminum chelate complex Alq3, where Ag-Mg or ln-Mg are used as the cathode, can be described by thermionic emission of electrons over the barrier height at the electron injection contact/Alq3 [78]. 

In bilayer LEDs the field distribution within the device can be modified and the transport of the carriers can be controlled so that, in principle, higher efficiencies can be achieved. On considering the influence of the field modification, one has to bear in mind that the overall field drop over the whole device is given by the effective voltage divided by the device thickness. If therefore a hole-blocking layer (electron transporting layer) is introduced to a hole-dominated device, then the electron injection and hence the efficiency of the device can be improved due to the electric field enhancement at the interface to the electron-injection contact, but only at expense of the field drop at the interface to the hole injection contact This disadvantage can be partly overcome, if three layer- instead of two layer devices are used, so that ohmic contacts are formed at the interfaces [112]. 

Figure 11-17. Calculated current density as a function of bias (upper panel) and electron density as a function of position at 12 V bias (lower panel) for a two-layer electron-only (0.5 cV electron injection barrier) device with the energy level diagram for the two polymer layers shown in Fig. 11-13. The mobility of the left hand polymer is increased by a factor of ten in the enhanced mobility structure (dotted line).

There are many organic compounds with useful electronic and/or optical properties and with sufficiently high volatility to be evaporable at a temperature well below that at which decomposition occurs. Since thermal evaporation lends itself to facile multilayering, organic compounds may be selected for use in one or more function electron injection, electron transport, hole injection, hole transport, andI or emission. A complete list of materials that have been used in OLEDs is too vast to be included here. Rather, we list those that have been most extensively studied. 

PPV and its alkoxy derivatives are /j-type conductors and, as a consequence, hole injection is more facile than electron injection in these materials. Efficient injection of both types of charge is a prerequisite for efficient LED operation. One approach to lowering the barrier for electron injection is the use of a low work function metal such as calcium. Encapsulation is necessary in this instance, however, as calcium is degraded by oxygen and moisture. An alternative approach is to match the LUMO of the polymer to the work function of the cathode. The use of copolymers may serve to redress this issue. 

Electron-hopping is the main charge-transport mechanism in ECHB materials. There is precedence in the photoconductivity Held for improved charge transport by incorporating a number of redox sites into the same molecule. A number of attempts to adapt this approach for ECHB materials have been documented. Many use the oxadiazole core as the electron-transport moiety and examples include radialene 40 and dendrimer 41. However, these newer systems do not offer significant improvements in electron injection over the parent PBD. 

Figure 11-8. Linear-linear (upper panel) and log-linear (lower panel) plots of calculated current density as a (unction of bias voltage for 100 nm MliH-PPV devices with a 2.2 eV barrier to electron injection and 0.1, 0.2, 0.3, 0.4. 0.5. and 0.6 eV barriers to hole injection.

Figure 11-9. Measured (solid lines) and calculated (dashed lines) current density us a (unction o( voltage bias for MBH-PPV devices o( about 110 nut in thickness with Au us the electron injecting contact and Pt, Au, Cu. and Al us the hole injecting contact. The upper panel shows a schematic energy level diagram for the structures.

A polymer layer al a contact can enhance current How by serving as a transport layer. The transport layer could have an increased carrier mobility or a reduced Schottky barrier. For example, consider an electron-only device made from the two-polymer-layer structure in the top panel of Figure 11-13 but using an electron contact on the left with a 0.5 eV injection barrier and a hole contact on the right with a 1.2 cV injection barrier. For this case the electron current is contact limited and thermionic emission is the dominant injection mechanism for a bias less than about 20 V. The electron density near the electron injecting contact is therefore given by... 

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