Electrical bandgap

In contrast, in the SSH model, the electrical bandgap arises because of the alternation between single and double carbon-carbon bonds, a signature of the Peierls distortion in a ID system. When a perfect ID chain of equidistant carbon atoms is considered, the electronic structure resulting from the electronic coupling between the atomic Pz-orbitals is that of a half-filled n band, implying a metallic... 

The second study of possible relevance reported that PbSe, precipitated from selenosulphate solution (not in the form of a film), was found to have an (electrical) bandgap, measured by temperature-dependent resistivity, of 0.4 eV [48], In the same study, samples prepared by reaction of solid lead tartrate with H2Se exhibited an electrical bandgap of 0.92 eV. These results suggest the occurrence of size quantization. 

Calculations for Ceo in the LDA approximation [62, 60] yield a narrow band (- 0.4 0.6 eV bandwidth) solid, with a HOMO-LUMO-derived direct band gap of - 1.5 eV at the X point of the fee Brillouin zone. The narrow energy bands and the molecular nature of the electronic structure of fullerenes are indicative of a highly correlated electron system. Since the HOMO and LUMO levels both have the same odd parity, electric dipole transitions between these levels are symmetry forbidden in the free Ceo moleeule. In the crystalline solid, transitions between the direct bandgap states at the T and X points in the cubic Brillouin zone arc also forbidden, but are allowed at the lower symmetry points in the Brillouin zone. The allowed electric dipole... 

The high electrical resistivity and the magnitude of the optical bandgap of Cfio can be reduced by the application of high pressure, with decreases in resistivity of about one order of magnitude observed per 10 GPa pressure [117]. However, at a pressure of 20 GPa, an irreversible phase transition to a more insulating phase has been reported [117]. 

Although it is required to refine the above condition I in actuality, this rather simple but impressive prediction seems to have much stimulated the experiments on the electrical-conductivity measurement and the related solid-state properties in spite of technological difficulties in purification of the CNT sample and in direct measurement of its electrical conductivity (see Chap. 10). For instance, for MWCNT, a direct conductivity measurement has proved the existence of metallic sample [7]. The electron spin resonance (ESR) (see Chap. 8) [8] and the C nuclear magnetic resonance (NMR) [9] measurements have also proved that MWCNT can show metallic property based on the Pauli susceptibility and Korringa-like relation, respectively. On the other hand, existence of semiconductive MWCNT sample has also been shown by the ESR measurement [ 10], For SWCNT, a combination of direct electrical conductivity and the ESR measurements has confirmed the metallic property of the sample employed therein [11]. More recently, bandgap values of several SWCNT... 

The electrical current of a coplanar interdigilal gold/LPPP/gold device is space charge limited due to p-type charge earner traps localized in the bandgap [28]. This can be inferred from the field dependence of the dark current at room temperature. The thermally stimulated current spectrum exhibits two peaks, corresponding to two distinct trap levels ,1 and ,", which can be calculated from the rise in current, /, below the peak temperature ... 

The photoinduced absorption and the electrical characteristics of the conjugated LPPP show that the optoelectrical properties are strongly dependent on charge carrier traps in the bandgap. From aromatic molecular crystals it is known that impurities and structural imperfections form localized states [34]. LPPP forms homogeneous and dense films with a mean interchain distance of about 20 A and ncgligi-... 

Electrical resistivity, flcm 4-40 Bandgap at 300K (eV) 0.66 Drift Mobility... 

The electrical properties (dark conductivity and photoconductivity) are reported to first decrease and then increase upon increasing power [361]. The optical bandgap increases with increasing power, due to the increase of the hydrogen content [63, 82, 362, 363]. However, at very high power levels, microcrystalline silicon is formed [364], which causes the hydrogen content (and, consequently, the bandgap) to decrease. 

The size of the bandgap can vary from a fraction of an eV (in the IR region of the spectrum) to ca. 4 eV or more (wide-bandgap semiconductors). The upper limit is somewhat arbitrary a substance commonly thought of as an insulator such as diamond has a large bandgap of 5.5 eV, but it can nevertheless be doped with elements such as B, N, or P to become an electrically-conducting semiconductor. 

Because of its indirect bandgap, bulk crystalline silicon shows only a very weak PL signal at 1100 nm, as shown for RT and 77 K in Fig. 7.9. Therefore optoelectronic applications of bulk silicon are so far limited to devices that convert light to electricity, such as solar cells or photodetectors. The observation of red PL from PS layers at room temperature in 1990 [Cal] initiated vigorous research in this field, because efficient EL, the conversion of electricity into light, seemed to be within reach. Soon it was found that in addition to the red band, luminescence in the IR as well as in the blue-green region can be observed from PS. 

Electrons near the Fermi level are mobile and give rise to electrical conductivity. The band formed from overlap of p atomic orbitals is called the p band. The overlap of andp orbitals produces andp bands. If separation between andp atomic orbitals is large, the separation between s and p bands in metal is large. There is a bandgap in this case (Fig. 3.11). When the s-p separation is smaller, the bands overlap. 

J. Han and R. L Gunshor, MBE Growth and Electrical Properties of Wide Bandgap ZnSe-based 11-VI Semiconductors... 

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