Thick film deposition

Differences in the orientations and polymorphism have been identified on vapor deposited thick films of iron phthalocyanines supported on glassy carbon (129). These "bulk" differences correlated directly with the ability of the film to catalyze... 

However, with such high mass loads, the mechanical stability of the system quartz-crystal deposited thick films decreases. Thus the fact that materials with different elastic properties will obey different mass-frequency relations requiring correction by the acoustic impedance ratio Z = Zq / Zf, eqn. (5), is of less importance practically. 

FIGURE 27.15 The screen printing process for depositing thick film circuits. The ink is forced through the screen, which then snaps away leaving a film on the substrate. 

Screen printing of conductive andinsulative adhesives has been used for decades in the assembly ofhybridmicrocircuit and multichip modules. Since screen-printing processes are also used to deposit thick-film conductors, resistors, and dielectrics, the processes are fully compatible and cost effective in the production of hybrid microcircuits. Screen printing and stencil printing are both batch processes that are usually less expensive and... 

Dielectric Film Deposition. Dielectric films are found in all VLSI circuits to provide insulation between conducting layers, as diffusion and ion implantation (qv) masks, for diffusion from doped oxides, to cap doped films to prevent outdiffusion, and for passivating devices as a measure of protection against external contamination, moisture, and scratches. Properties that define the nature and function of dielectric films are the dielectric constant, the process temperature, and specific fabrication characteristics such as step coverage, gap-filling capabihties, density stress, contamination, thickness uniformity, deposition rate, and moisture resistance (2). Several processes are used to deposit dielectric films including atmospheric pressure CVD (APCVD), low pressure CVD (LPCVD), or plasma-enhanced CVD (PECVD) (see Plasma technology). 

Optical Properties. The index of refraction and extinction coefficient of vacuum-deposited aluminum films have been reported (8,9) as have the total reflectance at various wavelengths and emissivity at various temperatures (10). Emissivity increases significantly as the thickness of the oxide film on aluminum increases and can be 70—80% for oxide films of 100 nm. 

Siace the early 1970s, development work has been reported on thick-film, thin-film, and other resistance elements which are made by deposition rather than wound from wine. Such thermometers might have certain advantages of size, response time, cost, etc. These do not have the stabiUty or iaterchangeabihty of wrought-wke elements. 

The deposition of material along the length of a collecting surface will decrease uniformly initially, but as the first segment becomes saturated with the deposit, the film thickness will become progressively uniform along the... 

Macrostrain is often observed in modified surfaces such as deposited thin films or corrosion layers. This results from compressive or tensile stress in the plane of the sample surface and causes shifts in diffraction peak positions. Such stresses can easily be analyzed by standard techniques if the surface layer is thick enough to detect a few diffraction peaks at high angles of incidence. If the film is too thin these techniques cannot be used and analysis can only be performed by assuming an un-... 

The XPS survey spectrum of a 75 nm thick film of plasma polymerized acetylene that was deposited onto a polished steel substrate is shown in Fig. 18 [22]. This film consisted mostly of carbon and a small amount of oxygen. Thus, the main peaks in the spectrum were attributed to C(ls) electrons near 284.6 eV and 0(ls) electrons near 533.2 eV. Additional weak peaks due to X-ray-induced O(KVV) and C(KLL) Auger electrons were also observed. High-resolution C(ls) and 0(ls) spectra are shown in Fig. 19. The C(ls) peak was highly symmetric. 

The largest uses of platinum group metals in electronics are ruthenium for resistors and palladium for multilayer capacitors, both applied by thick film techniques . Most anodes for brine electrolysis are coated with mixed ruthenium and titanium oxide by thermal decomposition . Chemical vapour deposition of ruthenium was patented for use on cutting tools . 

There are many temporary protectives on the market and it would be impracticable to describe them individually. However, they may be classified according to the type of film formed, i.e. soft film, hard film and oil film the soft film may be further sub-divided into solvent-deposited thin film, hot-dip thick film, smearing and slushing types. All these types are removable with common petroleum solvents. There are also strippable types based on plastics (deposited by hot dipping or from solvents) or rubber latex (deposited from emulsions) these do not adhere to the metal surfaces and are removed by peeling. In addition there are volatile corrosion inhibitors (V.C.I.) consisting of substances, the vapour from which inhibits corrosion of ferrous metals. 

Aqueous cathodic electrodeposition has been shown to offer a low-cost route for the fabrication of large surface n-CdS/p-CdTe solar cells. In a typical procedure, CdTe films, 1-2 xm thick, are electrodeposited from common acidic tellurite bath over a thin window layer of a CdS-coated substrate under potential-controlled conditions. The as-deposited CdTe films are stoichiometric, exhibit strong preferential (111) orientation, and have n-type conductivity (doping density typically... 

In this context it should be mentioned that the height of the Schottky barrier depends on the proc iure of metal deposition and also on the pretreatment. Aspnes and Heller have investigated for instance metal-semiconductor contacts produced by depositing Ru, Rh or Pt as 400 A thick films. They found barrier heights for the metal in contact with air, of 0.6 eV for Ru on Ti02, which decreased to zero in the presence of hydrogen. These results are consistent with those of Yamamoto et al. . ... 

Below 200°C, reliable urea thermohydrolysis is very hard to achieve, therefore urea dosage is usually stopped in real-world urea-SCR systems in this temperature regime. Another serious problem connected with the urea injection at low temperatures is the formation of white to yellowish deposits, which are observed when urea solution is injected at very low exhaust gas temperatures or if the urea spray forms a thick film at the walls of the SCR system. The analysis of these deposits [26] showed that they mainly consist of urea and some biuret at low temperatures and of cyanuric acid and some biuret at higher exhaust gas temperatures around 350°C. From laboratory investigations of the urea decomposition, it is known that biuret is easily formed from 150 to 190°C [27], whereas the formation of cyanuric acid is predominant from 200 to 300°C, according to the following reactions [12] ... 

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