Deionized wafer

Sodium sulfate, anhydrous. Certified ACS, Fisher No. S421-500 Deionized wafer from a Milli-Q wafer purificafion sysfem (Millipore Co.)... 

The decompositions were carried out in a 50 ml thermostated glass flask equipped with a condenser and magnetic stirrer. Typically a solution of cyclohexenyl hydroperoxide (2 mmol), n-decane (internal standard) and catalyst (0.02 mmol metal) were stirred (1000 rpm) in 10 ml chlorobenzene at 80 °C for 5 h. The cyclohexenyl hydroperoxide conversion was determined by iodometric titration. Typically, 3.0 g of reaction mixture was diluted with 30 ml acetic acid/chloroform (2 1 v/v), 2.5 ml of saturated aqueous KI solution was added and the solution was allowed to stand for 1 h in fhe dark before adding 50 ml of deionized wafer and titration with a 0.1 M sodium thiosulfate solution. The reaction products were analysed by GC (CP Sil 5 CB column) after destroying remaining cyclohexenyl hydroperoxide by the addition of an excess of triphenylphosphine as a solution in 1,2-dichloroethane (24 g / 1). 

Reagents and Equipment. Weigh and place in a 10-mL Erlenmeyer flask 400 mg (1.39 mmol) of the p-(2,2,2-trifluoroacetamido)benzenesulfonyl chloride, which was prepared in Experiment [C2], In a 10 x 75-mm test tube, prepare a solution of 0.6 mL of fresh, concentrafed aqueous ammonia (ammonium hydroxide) and 0.4 mL of deionized wafer. Add this solution to the solid sulfonyl chloride in the Erlenmeyer flask. Now add a boiling stone. Use a glass rod to break up any lumps of the solid that may form. 

Fig. 4—Profile of a cylindrical liquid jet containing deionized water or a slurry with nano-particles impacting on a surface of a silicon wafer with an incident angle 6 at a speed v. (L=100 mm, <1>=2 mm, 0=45°.)...

A (100) oriented p-silicon wafer (Wacker Chemitronic) was cut into 5x5 mm pieces. These were cleaned in a UV/ozone dry stripper (Samco) for 15 min followed by a two minute rinse in doubly deionized water. The samples were dried in clean air for several minutes. A 10 pi amount of TEOS (purchased by Aldrich, electronic grade, as received) was dropped onto the dried surfaces. The film was allowed to dry in ambient air for 10 minutes and then immediately transferred into the vaccum-chamber of the TOF-SIMS spectrometer. 

The LB film depositions were performed using a Joyce-Loebl Langmuir Trough IV equipped with a microbalance for measurement of the surface pressure by the Wilhelmy plate method. Filtered deionized water with a pH of 7 was used for the subphase. For the electron beam lithography study, PMMA was spread on the water surface from a dilute benzene solution ( 10 mg PMMA in 20 ml benzene). The novolac/PAC mixtures were spread from solutions ( 20 mg solids in 10 ml solvent) of isopropyl acetate. For the fluorescence studies, the PMMA/PDA mixture was spread on fee water surface from a dilute benzene solution (1.75 mg PDA and 8.33 mg PMMA in 20 ml benzene). Prior to compression, a 20 min interval was allowed for solvent evaporation. The Langmuir film was compressed to the desired transfer pressure at a rate of 50 cm2/min, followed by a 20 minute equilibration period. The Cr-coated silicon wafers and quartz wafers were immersed into fee subphase before... 

All standard cleaning processes for silicon wafers are performed in water-based solutions, with the exception of acetone or (isopropyl alcohol, IPA) treatments, which are mainly used to remove resist or other organic contaminants. The most common cleaning procedure for silicon wafers in electronic device manufacturing is the deionized (DI) water rinse. This and other common cleaning solutions for silicon, such as the SCI, the SC2 [Kel], the SPM [Ko7] and the HF dip do remove silicon from the wafer surface, but at very low rates. The etch rate of a cleaning solution is usually well below 1 nm min-1. 

Si wafers were either cleaned in Piranha solution, washed with deionized water and dried with Ar gas, or used without cleaning. The samples were then inserted into the high temperature tube furnace. Since SAN can form extremely fast, we believe that SAN existed in all samples. When the furnace temperature was set between 1035 and 1100°C, SiNW were formed. 

The sorption/desorption processes were studied by a batchtype technique. Aqueous solutions were prepared by mixing rock powders with distilled-deionized water. For the sorption experiments, portions of these aqueous solutions were loaded with tracer quantities of a single radioactive nuclide and contacted with wafers of a given rock type. For the desorption experiments, wafers from the sorption experiments were contacted with the remaining portions of the aqueous solutions. 

The existing cleaning methods can be divided into wet and dry cleaning. The wet cleaning process uses a combination of solvents, acids, surfactants and deionized (DI) water to spray and dissolve contaminants from the surface area. The Dl water is used to rinse after each chemical use. The oxidation of the wafer surface is sometimes integrated into the cleaning... 

After the PMDA-ODA films were fully cured, they were cut into 1.59 mm wide peel strips using a wafer dicer with deionized water coolant. The polyimide film was carefully cut down to the wafer, taking care that the wafer stayed intact. 

Vapor phase dissolution (VPD) is commonly used for surface and contamination analysis of semiconductor wafers [374-379]. HF vapor is used to remove a silicon oxide or native silicon layer. A drop of hydrofluoric acid or deionized water (with a volume of 50 to 200 jxL) is placed on the surface and rolled around the surface to dissolve the metals. The small drop is then analyzed by ICP-MS by using either a direct injection nebulizer, a micronebulizer, or ETV. The ability of ICP-MS to measure several elements rapidly in a small volume of solution is essential. 

The current analytical capabilities of ICP-MS provide a means to assess new low levels of contamination in the semiconductor industry [385]. Contamination in clean room air can be detected at very low levels. Dopant and trace metal contamination on semiconductor wafer surfaces can be monitored. Ultratrace metals in deionized water, high-purity acids, and other process chemicals can often be measured at concentrations less than 1 part per trillion. 

The simple dissolution rate results were obtained using a laser interferometer with a 15 mw/cm He-Ne laser at normal incidence to the wafer surface in the agitated developer bath. The reflected beam was directed by a beam splitter onto a photocell. The photocell output was fed through a Keithly series 500 interface into an IBM-PC. The more complex dissolution data were collected on a Perkin-Elmer dissolution rate monitor using 934 developer at a 1 1 dilution with deionized water at a temperature of 21 C. The stepped exposures were obtained using a calibrated multidensity chrome stepwedge. 

In this formulation, the ratio of NVC to PTCEM is 1 1 in the mixture. One micron thick film was spin coated on a silicon wafer using chlorobenzene as the coating solvent. The film was vacuum dried for an hour at room temperature and coated on the top with PVA film. The film was vacuum baked for an hour and exposed with an e-beam. After e-beam exposure, the PDE film was dipped in deionized water for 30 seconds to remove the PVA layer, and baked at 120° C for 30 minutes. The patterns were visible after the bake. The development of patterns was conducted in a barrel etcher using O2 plasma. The temperature inside the barrel etcher during the development was maintained at <90 C. SEM micrographs of some plasma developed patterns are shown in Figures 2 and 3. 

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