Resists removal

To clarify the selection of a particular MLR system (ILR, 2LR, or 3LR system) a comparison in terms of process complexity, resolution, aspect ratio, linewidth tolerance, sensitivity and effort required for research and development will be given. Then a comparison between deep-UV and RIE PCM systems in terms of resolution, aspect ratio, substrate patterning processes allowed, temperature stability, resist removal at the alignment sites, tool-controlling parameters, and tool cost will be included. 

Both the deep-UV-and the RIE PCM-delineated resist structures can be used for electroplating which was successfully demonstrated by Satini and Viswanathan 45) as shown in Figure 22 for the deep-UV PCM case. In this case the control of the image in the planarizing layer is critical. Because of the unique anisotropic characteristics of RIE, this control should also be feasible for RIE PCM. In such cases linewidth variations include the contribution from the planarizing layer as well as top layers. The consideration of resist removal after plating is similar to the case for lift-off. 

Figure 4. Si wei-etched samples with resist removed, in (al the substrate was treated with VTS, while in (b) the control wafer had no organosilane treatment.

GRGDS Methoxy-capped PEG NIH-3T3 fibroblasts Local modification of NHS-terminated PEG with 2-methoxyethylamine through a micropatterned photoresist (photolithography), backfill with peptide after resist removal 2008 [157]... 

Surface treatment of textiles, leather, glass, wood, and paper is the second largest application for fluorinated polyurethanes. The coatings are applied in one-step treatment and impart resistance to soil, water, oil, and stains as well as a smoothness to fabrics and leather that resists removal by many cycles of laundering or dry cleaning.52... 

In order to remove the resist after the RIE treatment, wafers were immersed in phenolic-type resist stripper, but the resist as well as the scum could not be stripped. Since a thin silicon oxide layer is formed on the resist surface, and the composition of scum is thought to be silicon oxide as discussed above, it is necessary to remove this silicon oxide layer (scum) prior to the resist removal. Therefore, resist stripping was done in two steps. In a first step the wafer was immersed in buffered hydrofluoric acid solution to remove the silicon oxide and was then treated with conventional resist stripper. 

Fig. 12.17). The additional mask required for OE is a reversed copy of the STI mask with reduced structure size. RIE then removes the oxide in the exposed areas, stopping on the nitride. After RIE of the oxide and resist removal, the remaining nonplanarity at the periphery of the active areas is easily removed with CMP. The planarity results are excellent (Fig. 12.18), and unlike in the case of dummy insertion, planarity improvement is achieved without a negative impact on performance. The main disadvantage of the technique is the increased process complexity due to the additional lithography and RIE steps. 

Figure 14.9 Scanning electron microscope image of a silver islands film on a silicon substrate, after selective masking with an EBL-pattemed resist layer, subsequent immersion in a gold ions aqueous solution and final resist removal. The brighter region corresponds to a -2 pm wide Au stripe, while the surrounding area corresponds to the initially evaporated Ag layer.

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