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Cross-sectional scanning electron

Fig. 18. Cross-sectional scanning electron micrograph of a three-layered alumina membrane/support (pore sizes 0.2, 0.8, and 12 p.m, respectively). Fig. 18. Cross-sectional scanning electron micrograph of a three-layered alumina membrane/support (pore sizes 0.2, 0.8, and 12 p.m, respectively).
Fig. 2. Cross-section scanning electron micrographs of a-Si H deposited on etched crystalline silicon substrates under (a) CVD conditions, 2W, 300°C, 100% SiH4 and (b) PVD conditions, 25W, 300°C, 5% SiH4 in argon (Tsai et al., 1986). Fig. 2. Cross-section scanning electron micrographs of a-Si H deposited on etched crystalline silicon substrates under (a) CVD conditions, 2W, 300°C, 100% SiH4 and (b) PVD conditions, 25W, 300°C, 5% SiH4 in argon (Tsai et al., 1986).
FIGU RE 6.14 Cross-sectional scanning electron micrograph of ametal-supported SOFC, with anode and electrolyte produced by SPS and cathode produced by screen printing. Electrolyte is approximately 30 pm thick [46]. Reprinted from [46] with permission from Elsevier. [Pg.268]

Figure 3. (a) Plan view image of a SOI waveguide microspectrometer with 0.08 nm channel spacing and 20 nm free spectral range, (b) Plan view and a cross-section scanning electron microscope view of the waveguide apertures at the combiner output. [Pg.7]

Damage mode Visual 1-50 x fracture surface Metallography 50-1000 x (cross-section) Scanning electron microscopy, 20-10000 x (fracture surface)... [Pg.153]

FIGURE 20.17 (A) X-ray diffraction spectra and (B) cross-sectional scanning electron micrograph image of 160 nm Ta(Al)N(C) film on a patterned silicon wafer. (From AUen, R, Juppo, M., Ritala, M., Sajavaara, T., Keinonen, J., and Leskela, M., J. Electrochem. Soc., 148, G566, 2001.)... [Pg.360]

Figure 5.38 Cross-section scanning electron micrograph showing the concurrent deformation of the scale and alloy during thermal cycling of an Fe-Cr-Al-Ti alloy from 1100 °C to room temperature. Figure 5.38 Cross-section scanning electron micrograph showing the concurrent deformation of the scale and alloy during thermal cycling of an Fe-Cr-Al-Ti alloy from 1100 °C to room temperature.
Figure 5.40 Cross-section scanning electron micrograph showing the alumina scale formed on a Y-doped Fe-Cr-Al alloy after cychc oxidation at 1100°C for 525 h. Figure 5.40 Cross-section scanning electron micrograph showing the alumina scale formed on a Y-doped Fe-Cr-Al alloy after cychc oxidation at 1100°C for 525 h.
Fig. 2.3 Top Cross-sectional scanning electron micrographs of the micromorphology of Pt ionic-polymer metal composites after treatment of the initial compositing process (ICP) (a) and the surface electroding process (SEP) (b). The bottom images show the cross-sectional view of the digital scanning microscope of the Pt IPMCs, where the treatment of ICP is again shown on the left and SEP on the right. Reprinted from [Park et al. (2008)] with permission from Cambridge University Press. Fig. 2.3 Top Cross-sectional scanning electron micrographs of the micromorphology of Pt ionic-polymer metal composites after treatment of the initial compositing process (ICP) (a) and the surface electroding process (SEP) (b). The bottom images show the cross-sectional view of the digital scanning microscope of the Pt IPMCs, where the treatment of ICP is again shown on the left and SEP on the right. Reprinted from [Park et al. (2008)] with permission from Cambridge University Press.
Figure 21.2 (a) Cross-sectional scanning electron micrograph... [Pg.429]

Figure 22.3 Cross-sectional scanning electron micrographs of PLA-CaC03 composites (CCPC) upon exposure to SBF (a and b) 20% filler (c and d) 30% filler (a,c) 1 days (b,d) 3 days of immersion. (Reproduced with permission from Elsevier, Ref. [19].)... Figure 22.3 Cross-sectional scanning electron micrographs of PLA-CaC03 composites (CCPC) upon exposure to SBF (a and b) 20% filler (c and d) 30% filler (a,c) 1 days (b,d) 3 days of immersion. (Reproduced with permission from Elsevier, Ref. [19].)...
Figure 1.12 Cross-sectional scanning electron microscopy images of EPD-fabricated composites or multilayered coatings (a) Laminate coatings of chitosan (Ch) and HA (H) with different layers on a graphite substrate (S) (b) 10 alternating layers of AI2O3 and Zr02 (c) polyacrylic acid films containing halloysite nanotubes (white arrows) on the platinized sihcon wafer substrate (d) sodium hyaluronate and bovine serum albumin composite films (H + B) on a graphite substrate (S). Figure 1.12 Cross-sectional scanning electron microscopy images of EPD-fabricated composites or multilayered coatings (a) Laminate coatings of chitosan (Ch) and HA (H) with different layers on a graphite substrate (S) (b) 10 alternating layers of AI2O3 and Zr02 (c) polyacrylic acid films containing halloysite nanotubes (white arrows) on the platinized sihcon wafer substrate (d) sodium hyaluronate and bovine serum albumin composite films (H + B) on a graphite substrate (S).
Fig. 11. Cross-sectional scanning electron micrograph of an asymmetric Loeb-Sourirajan ultrafiltration membrane. The large macrovoids under the membrane skin (top surface) are common in this type of ultrafiltration membrane. Fig. 11. Cross-sectional scanning electron micrograph of an asymmetric Loeb-Sourirajan ultrafiltration membrane. The large macrovoids under the membrane skin (top surface) are common in this type of ultrafiltration membrane.
Silicon Micromachining, Figure 14 Cross sectional scanning electron microscope (SEM) of silicon microbeams coated with thermally grown Si02... [Pg.1845]

Figure 11.1 A 45° cross-sectional scanning electron micrograph of a cleaved porous silicon layer etched in a highly doped p-type silicon wafer. Figure 11.1 A 45° cross-sectional scanning electron micrograph of a cleaved porous silicon layer etched in a highly doped p-type silicon wafer.
Figure 1.2 A cross-section scanning electron microscope image of a six-level metal backend structure. The insulating layers between the metal layers have been etched away, similar to the sacrificial etch that is used to release structures in the polysilicon surface micromachining process described below. (Reprinted with permission from JOM Journal of the Minerals, Metals and Materials Society.)... Figure 1.2 A cross-section scanning electron microscope image of a six-level metal backend structure. The insulating layers between the metal layers have been etched away, similar to the sacrificial etch that is used to release structures in the polysilicon surface micromachining process described below. (Reprinted with permission from JOM Journal of the Minerals, Metals and Materials Society.)...
Figure 14.5 Local InGaN growth rate and In composition. Inset is a cross-sectional scanning electron microscopy (SEM) image estimated. Broken line drawn for the In viewed along the [1100] direction. Numbers composition is to guide the eye. Figure 14.5 Local InGaN growth rate and In composition. Inset is a cross-sectional scanning electron microscopy (SEM) image estimated. Broken line drawn for the In viewed along the [1100] direction. Numbers composition is to guide the eye.
FIGURE 3.7 (a) Cross-sectional scanning electron microscope image of a gas diffusion electrode, showing (1) the nickel mesh current collector, (2) the gas diffusion layer (carbon black/35 wt% PTFE), and (3) the MWCNT catalytic layer (3.5 Wt% PTFE). (b) Schematic representation of the three-phase interphase in a gas diffusion biocathode. (Reproduced with permission from Ref. [55]. Copyright 2011, WUey-VCH Verlag GmbH.)... [Pg.23]

Figure 14.6a shows the cross-section scanning electron microscopy (SEM) image of the electrolyte and hydrogen membrane. Before preparation of the cross-section sample, the tungsten protection layer was coated on the electrolyte layer to avoid damage. As seen, a solid and uniform electrolyte layer without... [Pg.277]

Figure 5.14 (a) A schematic illustration of oblique angle deposition (b) Top and (c) cross-sectional scanning electron microscopy Images of the Ag nanorod array SERS substrates. [Pg.189]


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