High cross-sectional scanning electron

Figure 11.1 A 45° cross-sectional scanning electron micrograph of a cleaved porous silicon layer etched in a highly doped p-type silicon wafer.

Electron microscopy easily yields structural images of cast bilayer films. Figure 6 shows a scanning electron microscope (SEM) image of the cross section of the bilayer film of CgAzoCioN+Br prepared by the simple casting of water solution. From the presence of well developed layers parallel to die film plane, it can be assumed that the cast film was composed from multiple highly oriented bilayers. 

Fig. 7a, b. Scanning electron photomicrographs of PLLA foams of pore size 250-500 pm a cross-section at low magnification after 30 days of chondrocyte culture b and on the surface at high magnification after 28 days of chondrocyte culture (Reproduced with permission from [39])... 

There are also catalyst formulations which have highly dispersed metals which are deliberately heterogeneously distributed on a support. If the microscopist is aware of the situation, he can take precautions in the sample preparation. This type of sample is the worst possible case to analyze because not only does the analyst have a complex mixture of components to sort out, but the analysis statistics are very poor. Consequently, additional time is usually required to survey the catalyst particles in order to establish a consensus of how it was constructed. Specialized specimen preparation such as ultramicrotoming and scraping the exterior of a sphere or extrudate may alleviate some of the interpretation problems. Additional aid may be solicited from a scanning electron microscope wherein an elemental distribution of a polished cross section of the catalyst sphere or extrudate can be made. 

Fig. 1. Morphology of nanosilver inks after sintering. High resolution scanning electron micrographs of cross-sections of inkjet printed features after sintering at 150°C for 60 minutes (a) Cima Nanotech ink, (b) Cabot ink.

Structural characterization of processed Si N was performed by cross-sectional transmission and high resolution electron microscopy techniques (XTEM and HRTEM, respectively). The structure of Si N samples was also investigated by X-ray diffractometry (XRD). The X-ray rocking curves, 20/co scans as well as X-ray reciprocal space maps (RSM) were registrated. 

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