Big Chemical Encyclopedia

Chemical substances, components, reactions, process design ...

Articles Figures Tables About

Silicon pattern

Optical trapping can also be used as a lithographic tool (90). For example, a combination of optical molasses and an optical standing wave have been used to focus a beam of neutral sodium atoms and deposit them in the desired pattern on a suitable substrate (eg, silicon). Pattern resolutions of the order of 40 nm with good contrast (up to 10 1 between the intended features and the surrounding unpattemed areas) and deposition rates of about 20 nm/min were obtained (90). [Pg.204]

Fig. 16.4. Photoluminescent porous silicon patterned with chemically bound dodecenyl groups. Illumination of the substrate with UV light (365 nm) induces orange photoluminescence from the unfunctionalized (hydride-... Fig. 16.4. Photoluminescent porous silicon patterned with chemically bound dodecenyl groups. Illumination of the substrate with UV light (365 nm) induces orange photoluminescence from the unfunctionalized (hydride-...
Oxidized by aging in aqueous medium Rat mesenchymal stem cells (rMSC) Porous silicon patterned stripes were aged in PBS to form Si-OH sur ce. rMSC preferentially attach to flat Si, but straddled 20 pm wide porous silicon stripes with focal adhesion sites on the flat silicon, while nuclei remained over porous area Noval etal. (2012)... [Pg.26]

It was difficult to precisely compare the friction forces of different materials on different substrates (figs. 2.13 and 2.17) because the sensitivity of detecting the torsion angle was not always the same for each measurement. Platinum and silicon patterns were made on the same plate, and the friction and pull-off forces were measured to compare the friction coefficients calculated by dividing the friction forces by the pull-off forces for the different materials. Figure 2.18 shows the friction and scanned pull-off forces as a function of groove depth, and these forces were measured for... [Pg.32]

The friction force was more proportional to the pnll-off force than to the cnrvature radins. The friction coefficient (which was calcnlated by dividing the friction force by the pull-off force) for the silicon pattern was abont twice that for the platinnm pattern. These findings indicate that the adhesion force (pnll-off force) did not directly affect the friction bnt, rather, indirectly affected friction, similarly to the effect of an external load. [Pg.48]

Fig. 4 SEM image of poly-silicon pattern after dry oxidation for (a) 1 hour (b) 2 hours (c) 3 hours (d) 4 hours (e) 5 hours (f)6 hours (g) 7 houis (sample 1)... Fig. 4 SEM image of poly-silicon pattern after dry oxidation for (a) 1 hour (b) 2 hours (c) 3 hours (d) 4 hours (e) 5 hours (f)6 hours (g) 7 houis (sample 1)...
Dry etching is a commonly used teclmique for creating highly anisotropic, patterned surfaces. The interaction of gas phase etchants with surfaces is of fundamental interest to understanding such phenomena as undercutting and the dependence of etch rate on surface structure. Many surface science studies aim to understand these interactions at an atomic level, and the next section will explore what is known about the etching of silicon surfaces. [Pg.934]

Figure Bl.19.36. Image of the frictional force distribution of a pattern consisting of areas of CH -tenuinated and areas of COOH-tenninated molecules attached to gold-coated silicon. The tip was also fiinctionalized in (a) with CH3 species and in (b) with COOH species. The bright regions correspond to the higher friction force, which in (a) is observed on the CH areas and in (b) on the COOH areas. (Taken from [187], figure 3.)... Figure Bl.19.36. Image of the frictional force distribution of a pattern consisting of areas of CH -tenuinated and areas of COOH-tenninated molecules attached to gold-coated silicon. The tip was also fiinctionalized in (a) with CH3 species and in (b) with COOH species. The bright regions correspond to the higher friction force, which in (a) is observed on the CH areas and in (b) on the COOH areas. (Taken from [187], figure 3.)...
Figure 7.3. The evolution of electronics a vacuum tube, a discrete transistor in its protective package, and a 150 nun (diameter) silicon wafer patterned w ith hundreds of integrated circuit chips. Each chip, about I enr in area, contains over one million transistors, 0..35 pm in size (courtesy M.L. Green, Bell Laboratories/Lucent Technologies). Figure 7.3. The evolution of electronics a vacuum tube, a discrete transistor in its protective package, and a 150 nun (diameter) silicon wafer patterned w ith hundreds of integrated circuit chips. Each chip, about I enr in area, contains over one million transistors, 0..35 pm in size (courtesy M.L. Green, Bell Laboratories/Lucent Technologies).
Electronic materials are needed for computers and control devices purified silicon is the basic material for these applications. In addition silica glass (SiOj) is ail insulator, ahiininum an electrical conductor, and polymers are reactive materials for patterning in these devices. Control of evei"y step of energy production and traiismission is now completely dependent on electronics. [Pg.770]

By the middle of the nineteenth century more than 60 elements were known with new ones continuing to be discovered. For each of these elements, chemists attempted to determine its atomic weight, density, specific heat, and other properties. The result was a collection of facts, which lacked rational order, Mendeleev noticed that if the elements were arranged by their atomic weights, then valencies and other properties tended to recur periodically. However, there were gaps in the pattern and in a paper of 1871 Mendeleev asserted that these corresponded to elements that existed but had not yet been discovered. He named three of these elements eka-aluminium, eka-boron and eka-silicon and gave detailed descriptions of their properties. The reaction of the scientific world was sceptical. But then in 1874 Lecoq de Boisbaudran found an... [Pg.46]

IV as a cinerin-type compound, peak V as cinerin II, and peak VI as pyrethrin II. It is evident that peak IV also contains another component. The peaks beyond peak VI are known to be of the pyrethrin type as they respond to the color test. This gas chromatography pattern was obtained with a 6-foot lA -inch column packed with 20% SE-30 on 40-60-mesh Chromosorb P. Later work provided good resolution of the peaks with a 2-foot 4-inch column packed with 20% Dow-11 silicone oil on 45-60-mesh Chromosorb P. [Pg.67]

We have designed, manufactured and tested a prototype that may be applied in thermal control of electronic devices. It was fabricated from a silicon substrate and a Pyrex cover, serving as both an insulator and a window through which flow patterns and boiling phenomena could be observed. A number of parallel triangular micro-channels were etched in the substrate. The heat transferred from the device was simulated by different types of electrical heaters that provided uniform and non-uniform heat fluxes, defined here respectively as constant and non-constant values... [Pg.76]

Fig. 3.15 Examples of ultrahydrophobic surfaces. Lithographically etched silicon surface patterned with 30 pm tall cubic micro-posts. Reprinted from Ou et i. (2004) with permission... Fig. 3.15 Examples of ultrahydrophobic surfaces. Lithographically etched silicon surface patterned with 30 pm tall cubic micro-posts. Reprinted from Ou et i. (2004) with permission...

See other pages where Silicon pattern is mentioned: [Pg.460]    [Pg.171]    [Pg.1070]    [Pg.24]    [Pg.28]    [Pg.29]    [Pg.646]    [Pg.460]    [Pg.171]    [Pg.1070]    [Pg.24]    [Pg.28]    [Pg.29]    [Pg.646]    [Pg.932]    [Pg.1689]    [Pg.1859]    [Pg.2804]    [Pg.2930]    [Pg.133]    [Pg.435]    [Pg.19]    [Pg.696]    [Pg.217]    [Pg.282]    [Pg.289]    [Pg.93]    [Pg.443]    [Pg.540]    [Pg.161]    [Pg.108]    [Pg.158]    [Pg.339]    [Pg.194]    [Pg.65]    [Pg.451]    [Pg.162]    [Pg.73]    [Pg.56]    [Pg.86]    [Pg.93]   
See also in sourсe #XX -- [ Pg.81 ]




SEARCH



Friction force silicon patterns

Silicon isotope pattern

Small angle diffraction pattern, silicon

© 2024 chempedia.info