Asif Khan

B. K. Meyer, Magnetic Resonance Investigations on Group Ill-Nitrides M. S. Shur and M. Asif Khan, GaN and AlGaN Ultraviolet Detectors... 

The authors are grateful to Professors Hadis Morkoc and M.Asif Khan for their long term collaboration. The authors would also like to thank group members Dr. M. Smith, Dr. R. Mair, K.C. Zeng, J.Z. Li and C. Ellis for their assistance. 

Ning XJ, Chien FR, Pirouz P, Yang JW, Asif Khan M. Growth defects in GaN films on sapphire the probable origin of threading dislocations. J Mater Res 1996 11(3) 580. 

I wish to express my thanks to Dr. M. Saleh Ajaz and Mr. Athar Ata for their assistance in the preparation of the index. I am also grateful to Mr. Wasim Ahmad, Mr. Asif Khan and Mr. Shabbir Ahmad for the typing work and Mr. Mahraood Alam for secretarial assistance. 

R.S.Q. Fareed, V. Adivarahan, C.Q. Chen, S. Rai, E. Koukstis, J.W. Yang, M. Asif Khan, J. Caissie, R.J. Molnar, Air-bridged lateral growth of crack-free Alo.24Gao.76N on highly relaxed porous GaN, Appl. Pbys. Lett., 84, 696-698 (2004). 

M.G. Spencer, R.P. Devaty, J.A. Edmond, M. Asif Khan, R. Kaplan, M. Rahman (Eds) [ Proc. Conf. on Silicon Carbide and Related Materials, Washington DC, USA, 1-3 Nov. 1993 (Institute of Physics Publishing Ltd., Bristol and Philadelphia, 1994) ]... 

Adesida, A. Mahajan, E. Andideh, M. Asif Khan, D.T. Olsen, J.N. Kuznia, Reactive ion etching of gallium nitride in siticon tetrachloride plasmas, Appl. Phys. Lett. 63 (1993) 2777-2779. 

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