Chemical vapor deposition techniques nitride

Passivation is needed to insulate the backplane from the OLED stacks everywhere except the ITO and bonding contact areas. Unlike poly-Si and a-Si H backplanes, on which both organic and inorganic passivation layers can easily work, the device passivation technique needs extra consideration for pentacene TFTs. We explored several different materials for passivation of pentacene TFTs, including poly(vinyl alcohol) (PVA), room temperature plasma-enhanced chemical vapor deposition silicon nitride (RT PECVD SiN), and vapor-deposited parylene. 

In the fifteen years since publication of the first edition of Comprehensive Coordination Chemistry (CCC, 1987), group 5 chemistry has been part of the intensive development of ceramic, optical, and magnetic materials based upon metal borides, nitrides, phosphides, oxides, and sulfides. A major impetus came from the discovery of the high-temperature superconducting oxides. In addition, the search for new routes to these materials via sol-gel or chemical vapor deposition techniques has spurred growth in metal amido, oxo, alkoxo, thio, and carboxylato chemistry. 

Nanoscale materials are those with dimensions less than 100 nm. Most of the nanomaterials used, such as oxides, sulfides, nitrides, and others are well known, in many cases since the beginning of civilization. In recent decades, it has been observed that specific properties of these materials, useful in biomedical, electromagnetic, mechanical, and catalytic areas," can be enhanced by reducing particle size to nanoscale dimensions. Many synthetic strategies have been developed in order to obtain nanometric materials with specific properties. Thin films of powders, in particular, have been the subject of current investigations. Studies of new synthetic approaches for nanometric films are intimately connected with the development of the chemical vapor deposition technique, which has widespread acceptance and is used for the production of important supplies for semiconductor electronic applications. ... 

Dielectric Deposition Systems. The most common techniques used for dielectric deposition include chemical vapor deposition (CVD), sputtering, and spin-on films. In a CVD system thermal or plasma energy is used to decompose source molecules on the semiconductor surface (189). In plasma-enhanced CVD (PECVD), typical source gases include silane, SiH, and nitrous oxide, N2O, for deposition of siUcon nitride. The most common CVD films used are siUcon dioxide, siUcon nitride, and siUcon oxynitrides. 

Up to the present, a number of conventional film preparation methods like PVD, CVD, electro-chemical deposition, etc., have been reported to be used in synthesis of CNx films. Muhl et al. [57] reviewed the works performed worldwide, before the year 1998, on the methods and results of preparing carbon nitride hlms. They divided the preparation techniques into several sections including atmospheric-pressure chemical processes, ion-beam deposition, laser techniques, chemical vapor deposition, and reactive sputtering [57]. The methods used in succeeding research work basically did not... 

The carbides and nitrides of vanadium and titanium crystallize in the same face centered cubic (fee) system, and because of the closeness of their cell parameters (Table 15.1) form solid solutions. These ceramic materials exhibit interesting mechanical, thermal, chemical and conductive properties.1,2 Their high melting point, hardness and wide range of composition have therefore attracted considerable attention in the last decade. Moreover, their good abrasion resistance and low friction also make these ceramics attractive for protective coating applications.3-5 Chemical vapor deposition (CVD) is a commonly used technique for the production of such materials. In the conventional thermally activated process, a mixture of gases is used.6-9 In the case of TiC, TiN, VC and VN, this mixture is... 

Section 1.2 of this Chapter reviews the crystallization of diamond and cubic boron nitride using high pressure, high temperature techniques. Chapter 4 of Part II deals with the subject of chemical vapor deposition of diamond at low pressure. 

High-quality powders of refractory carbides and nitrides can be obtained by the more recent processing techniques of chemical-vapor deposition (CVD), RF-plasma torch, combustion synthesis, and sol-gel.l H l... 

As a consequence of their superior physical and chemical properties, silicon nitride and silicon carbonitride films have become increasingly important for both structural and microelectronic device applications. Chemical vapor depositions (CAH)) has become a major technique for the synthesis of these thin film materials flO]. 

Figure 2 presents the most common plasma-based surface modification techniques for biomedical applications, described in more detail later plasma assisted chemical vapor deposition or PACVD (RF, MW), physical vapor deposition or PVD (sputtering, cathodic arc), plasma polymerization and grafting, plasma-based thermochemical treatments (e.g. plasma nitriding), ion implantation, plasma immersion ion implantation or PHI, and plasma spraying. Each technique has unique advantages and applications, and the choice of the more adequate technique often depends on the... 

---