Chemical vapor deposition metal-organic compound

This article focuses primarily on the properties of the most extensively studied III—V and II—VI compound semiconductors and is presented in five sections (/) a brief summary of the physical (mechanical and electrical) properties of the 2incblende cubic semiconductors (2) a description of the metal organic chemical vapor deposition (MOCVD) process. MOCVD is the preferred technology for the commercial growth of most heteroepitaxial semiconductor material (J) the physics and (4) apphcations of electronic and photonic devices and (5) the fabrication process technology in use to create both electronic and photonic devices and circuits. 

Tertiary stibines have been widely employed as ligands in a variety of transition metal complexes (99), and they appear to have numerous uses in synthetic organic chemistry (66), eg, for the olefination of carbonyl compounds (100). They have also been used for the formation of semiconductors by the metal—organic chemical vapor deposition process (101), as catalysts or cocatalysts for a number of polymerization reactions (102), as ingredients of light-sensitive substances (103), and for many other industrial purposes. 

There are numerous materials, both metallic and ceramic, that are produced via CVD processes, including some exciting new applications such as CVD diamond, but they all involve deposition on some substrate, making them fundamentally composite materials. There are equally numerous modifications to the basic CVD processes, leading to such exotic-sounding processes as vapor-phase epitaxy (VPE), atomic-layer epitaxy (ALE), chemical-beam epitaxy (CBE), plasma-enhanced CVD (PECVD), laser-assisted CVD (LACVD), and metal-organic compound CVD (MOCVD). We will discuss the specifics of CVD processing equipment and more CVD materials in Chapter 7. 

J. T. Spencer, Chemical vapor deposition of metal-containing thin-film materials from metal-organic compounds. Proa. Inorq. Chem. 41, 145-237 (1994). 

Cyclopentadienyl compounds have been thoroughly investigated as suitable precursors to rare earth doped semiconductors in MOCVD (metal-organic chemical vapor deposition) or MOVPE (metal-organic vapor phase epitaxy) processes [283]. The use of btsa complexes for the same purpose has appeared in the literature very recently [285]. Typical process conditions are shown in Scheme 14. It was found that the carbon contamination of the deposited metal is less in the btsa case. 

A Review of Group 2 (Ca, Sr, Ba) Metal-Organic Compounds as Precursors for Chemical Vapor Deposition... 

Wojtczak, William A., Fleig, Patrick F., and Hampden-Smith, Mark J., A Review of Group 2 (Ca, Sr, Ba) Metal-Organic Compounds as Precursors for Chemical Vapor Deposition. 40 215... 

Dinuclear tetradiketonate complexes with metal-metal bonds have been prepared for Mo11114 and Ptin.115Also familiar are complexes with mixed sets of ligands such as VO(acac)2, V(acac)Cl2(THF)2, and V(acac)Cl(THF)3.116 Many of the diketonate compounds are volatile and have been extensively investigated as precursors for metal organic chemical vapor deposition (MOCVD).117... 

Interest in adducts of R2Cd compounds derives from their potential as a source for pure R2Cd for use in metal organic chemical vapor deposition (see Metal-Organic Chemical Vapor Deposition). ... 

B. C. Hui, J. Lorberth, and A. A. Melas, Hybrid Organometallic Compounds for Metal-Organic Chemical-Vapor Deposition, Eur. Pat. AppL, EP 181706 Al, 1986. 

---