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Chemical mechanical planarization shallow trench isolation

The acceptance of chemical mechanical planarization (CMP) as a manufacturable process for state-of-the-art interconnect technology has made it possible to rely on CMP technology for numerous semiconductor manufacturing process applications. These applications include shallow trench isolation (STI), deep trench capacitors, local tungsten interconnects, inter-level-dielectric (ILD) planarization, and copper damascene. In this chapter. [Pg.5]

B. Withers, E. Zhoa, R. Jairath, A Wide Margin CMP and Clean Process for Shallow Trench Isolation Applications, 1998 Proceedings of the Third International Chemical-Mechanical Planarization for VLSI Multilevel Interconnection Conference (CMP-MIC), Santa Clara, CA, pp. 319-327, Feb. 19-20,1998. [Pg.42]

SHALLOW TRENCH ISOLATION CHEMICAL MECHANICAL PLANARIZATION... [Pg.345]

Chatterjee A, Kwok SP, Ali I, Joyner K, Shinn G, Chen I-C. Chemical mechanical planarization (CMP) process windows in shallow trench isolation for advanced CMOS. Electrochem Soc Proc 1996 96-22 219-227. [Pg.367]

Stefanov Y, Ruland T, Schwalke U. Electrical afm measurements for evaluation of nitride erosion in shallow trench isolation chemical mechanical planarization.MRS Proceedings 2005. Vol. 838E. [Pg.367]

Lin CF, Tseng W, Fengand M, Wang Y. A ULSI shallow trench isolation process through the integration of multilayered dielectric process and chemical-mechanical planarization. Thin Solid Films 1999 22 248-252. [Pg.559]

J. Schlueter, I. Kim, F. J. Krupa, The Effect of Consumables in the Development of Advanced Shallow Trench Isolation (STI) CMP Processes, Proceedings of Chemical-Mechanical Planarization for ULSI Multilevel Interconnection Conference (CMP-MIC), 1999, pp.336-339... [Pg.231]

Bonner, B. A., A. Iyer, D. Kumar, T. H. Osterheld, A. S. Nickles, and D. Flynn, Development of a direct polish process for shallow trench isolation modules, CMP-MIC Spring Meeting, Proc. Symposium Chemical Mechanical Planarization for ULSI Multilevel Interconnection, 2001, p. 572. [Pg.171]

Matovu, J.B., et al., 2014. Chemical mechanical planarization of patterned InP in shallow trench isolation (SIT) template stmctures using hydrogen peroxide-based sihca slurries containing oxahc acid or citric acid. Microelectron. Eng. 116, 17—21. [Pg.134]

Kim, D.-H., Kang, H.-G., Kim, S.-K., Paik, U., Park, J.-G., 2006. Reduction of large particles in ceria slurry by aging and selective sedimentation and its effect on shallow trench isolation chemical mechanical planarization. Jpn. J. Appl. Phys. 45, 6790. [Pg.297]

Kim, S.K., Lee, S., Paik, U., Katoh, T., Park, J.G., 2003. Influence of the electrokinetic behaviors of abrasive ceria particles and the deposited plasma-enhanced tetraethylorthosiU-cate and chemically vapor deposited S13N4 films in an aqueous medium on chemical mechanical planarization for shallow trench isolation. J. Mater. Res. 18, 2163—2169. [Pg.297]


See other pages where Chemical mechanical planarization shallow trench isolation is mentioned: [Pg.139]    [Pg.369]    [Pg.467]    [Pg.33]    [Pg.429]    [Pg.91]    [Pg.238]    [Pg.3]    [Pg.273]   
See also in sourсe #XX -- [ Pg.433 , Pg.435 , Pg.436 ]




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