Charge resistance

Depending on charge characteristics and storage history, charge resistance may be many times this value. 

Fig. 108a-c. Proposed equivalent circuits for. a an empty and b a semiconductor-particle-coated BLM. Porous structure of the semiconductor particles allowed c the simplification of the equivalent circuit. Rm, RH, and Rsol are resistances due to the membrane, to the Helmholtz electrical double layer, and to the electrolyte solutions, while C and CH are the corresponding capacitances Rf and Cf are the resistance and capacitance due to the particulate semiconductor film R m and Cm are the resistance and capacitance of the parts of the BLM which remained unaltered by the incorporation of the semiconductor particles R and Csc are the space charge resistance and capacitance at the semiconductor particle-BLM interface and Rss and C are the resistance and capacitance due to surface-state on the semiconductor particles in the BLM [652]... 

The boundary resistance R is dominated either by the space charge resistance in the current direction or the proper charge transfer resistance through the boundary core (Part I, Section VI.6). (Resistance effects due to laterally inhomogeneous contact conditions are discussed in Section III.9). 

The charging resistance is selected so that its power rating is greater than the average input electrical power. 

Rc is a charging resistance, chosen to limit the amount of added energy from the power supply during the discharge. It is adjusted for various values of C. 

Space-charge capacitance and space-charge resistance of polypyrrole as a function of the potential were shown in Figure 11.19. Similar results can be obtained for polythiophene. The potential dependence of the capacitance values in the cathodic region is typical for ap-type semiconductor. Then one should observe a linear dependence of on the potential (Mott-Schottky plot). Such a plot is shown for polythiophene in Figure 11.21. 

It is necessary to supply energy to the electrochemical system whenever it is working as an electric load (electrolyser mode). The most frequently used supply devices are electric current sources and voltage sources. A mere variable charge resistance can suffice to study an electrochemical system in the power supply mode. 

Fast charging Resistance Low separator resistance will aid in overall faster charging by allowing higher md/or longer constant current charging... 

Results during start-up from -5°C, residual water did not alter the electrochemical active surface area or charge resistance at low current density less water was stored in the catalyst layer than in the cell... 

Using knowledge of the particle area S, the charge transfer resistance, expressed as the ohmic parameter Ra (O), can be used to obtain the specific charge resistance Ret [Om ] as Ra = Rl, S. Correspondingly, (Farad) can be transformed into the specific double-layer capacitance Cat (Farad/m ) as Cji = C S. The combined ionic and electronic resistance of mesoporous material R (f2) is given by pdIA where p (Qm) is the specific resistance of the active material (sum of ionic and electronic resistances), A is the geometric surface area of the electrode (m ), and d is the thickness of the layer of active material (m). 

Figure 3.12. Sheng s model considers the effect of fluctuation-induced tunneling through potential barriers between extended highly conducting regions. In a model circuit the barriers can be treated as capacitances with charging resistances [22b].

Figure 31.34 shows that D,e/np/s in NaCl had high charge resistance and lower polarization resistance with strong absorption on an exposed bare mild steel surface at the beginning of immersion. Gradually, the system... 

---