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Capacitance values

The metallized film capacitors have the characteristic of self-healing. On a small dielectric failure the capacitor element is not rendered completely unserviceable. After clearing the fault, the affected capacitor element returns to the circuit and the capacitor unit functions normally. Only the punctured area is eliminated from the element and causes a negligibly small reduction in its capacitance value. Such a characteristic is termed self-healing and such capacitors are known as the self-healing type. [Pg.814]

The factors discussed in Section 23.5.2 give rise directly to the current drawn by the capacitor unit and indirectly add to its rating. The relevant Standards on this device recommend a continuous overload capacity of 30% to account for all such factors. A capacitor can have a tolerance of up to -t-15% in its capacitance value (Section 26.3.1(1)). All current-carrying components such as breakers, contactors, switches, fuses, cables and busbar systems associated with a capacitor unit or its banks, must therefore be rated for at least 1.3 x 1.15/,., i.e. 1.54. For circuits where higher amplitudes of harmonics are envisaged, for reasons of frequent load variations or more... [Pg.818]

We have considered ihe niaxinuini overcunenl facior I or illustration. It corresponds to the nia.ximuni permissible upper variation in the capacitance value of a capacitor or a bank. One can. however, consider a lower factor depending upon the maximum permissible upper variation for a particular type (voltage and VAr rating) of capacitor unit or hank. A factor of. ]f> is, however, recommended lor capacitor duties. See also Section 2.5.6. [Pg.829]

For LT units 2% of its capacitance value For HT units The two test values should be corrected to the same reference of dielectric temperature, say, 20°C or as agreed. The difference between tbe two test values should be less than an amount corresponding to either breakdown of an element or operation of an internal fuse. [Pg.840]

There are very few surface mount capacitors with the desired value, voltage rating, and low ESR all in one part. It would be more conservative to parallel two capacitors of no less than one-half the desired capacitance value. This allows many more second sourced capacitors to be used and lowers the ESR. Lets use two 330 pF, 10 V tantalum capacitors in parallel. The Candidates now become ... [Pg.102]

Capacitors at the higher voltages have smaller capacitance values. There will be two 68 pF capacitors in parallel. The candidates are ... [Pg.102]

Electrochemical capacitors typically have capacitance values of millifarads to tens of farads, in contrast to electrolytic capacitors, which typically have values in the range of picofarads to microfarads. [Pg.215]

Such an approach revealed objective limitations as it became evident that the equality in the capacitance values for different metals was only a first approximation. The case of Ga is representative. Ga is a liquid metal and the value of capacitance cannot depend on the exact determination of the surface area as for solid metals (i.e., the roughness factor is unambiguously =1). [Pg.158]

Calculated with capacitance value from charging experiment. [Pg.378]

Figure 11. Experimental and predicted differential conductance plots of the double-island device of Figure 10(b). (a) Differential conductance measured at 4.2 K four peaks are found per gate period. Above the threshold for the Coulomb blockade, the current can be described as linear with small oscillations superposed, which give the peaks in dljdVj s- The linear component corresponds to a resistance of 20 GQ. (b) Electrical modeling of the device. The silicon substrate acts as a common gate electrode for both islands, (c) Monte Carlo simulation of a stability plot for the double-island device at 4.2 K with capacitance values obtained from finite-element modeling Cq = 0.84aF (island-gate capacitance). Cm = 3.7aF (inter-island capacitance). Cl = 4.9 aF (lead-island capacitance) the left, middle and right tunnel junction resistances were, respectively, set to 0.1, 10 and 10 GQ to reproduce the experimental data. (Reprinted with permission from Ref [28], 2006, American Institute of Physics.)... Figure 11. Experimental and predicted differential conductance plots of the double-island device of Figure 10(b). (a) Differential conductance measured at 4.2 K four peaks are found per gate period. Above the threshold for the Coulomb blockade, the current can be described as linear with small oscillations superposed, which give the peaks in dljdVj s- The linear component corresponds to a resistance of 20 GQ. (b) Electrical modeling of the device. The silicon substrate acts as a common gate electrode for both islands, (c) Monte Carlo simulation of a stability plot for the double-island device at 4.2 K with capacitance values obtained from finite-element modeling Cq = 0.84aF (island-gate capacitance). Cm = 3.7aF (inter-island capacitance). Cl = 4.9 aF (lead-island capacitance) the left, middle and right tunnel junction resistances were, respectively, set to 0.1, 10 and 10 GQ to reproduce the experimental data. (Reprinted with permission from Ref [28], 2006, American Institute of Physics.)...
It is much less clear how the adsorption leads to such a dramatic change as a potential decay of several hundred volts, occurring within milliseconds. This short time is difficult to associate with film thinning, as assumed in the adsorption mechanism of pit initiation. It is not only that the mechanism of dissolution changes so much that the current efficiency falls from virtually 100% to virtually zero, but also that the resistance of the oxide decreases by orders of magnitude. The control of the process is, to a great extent, taken over by the events at the O/S interface, judging from the capacitance values measured,115 which approach those typical of the electrochemical double layer (cf. Fig. 22). [Pg.442]

Due to their moderate specific surface area, carbon nanotubes alone demonstrate small capacitance values. However, the presence of heteroatoms can be a source of pseudocapacitance effects. It has been already proven that oxygenated functional groups can significantly enhance the capacitance values through redox reactions [11]. Lately, it was discovered that nitrogen, which is present in carbon affects also the capacitance properties [12]. [Pg.31]

In this work, MWNTs will be mixed with polyacrylonitrile (PAN) and the MWNTs/PAN composite will be carbonized, giving rise to a new C/C composite with interesting capacitance properties. It is striking that the composite components alone give negligible capacitance values below 20... [Pg.31]

Table 3. Capacitance values (F g1) of the KOH activated carbons (A-C A-CS A-PM A-PS A-AC) estimated by galvanostatic discharge, cyclic voltammetry and impedance spectroscopy. ecific ca acitancejiF m alculated erjurfdceareao carbon. Table 3. Capacitance values (F g1) of the KOH activated carbons (A-C A-CS A-PM A-PS A-AC) estimated by galvanostatic discharge, cyclic voltammetry and impedance spectroscopy. ecific ca acitancejiF m alculated erjurfdceareao carbon.
Table 4. Capacitance values in F/g (per gram of carbon material) for the carbons CS48, CS15, CPr48, CPrl5 in acidic, basic and organic media. ... [Pg.38]

The capacitance values of the carbons from propylene, i.e. CPr in the three electrolytic media are lower than for the materials from sucrose CS (Table 4), and they decrease with the total surface area of the carbon materials, i.e. with the filling rate of carbon in the silica porosity [18], These results are not surprising since the carbon filling is quite uniform during the CVI process, and consequently, the fraction of micropores formed is much... [Pg.39]

In conclusion, although the porous texture of these materials is of limited interest for getting high capacitance values, it allows to clearly demonstrate the beneficial effect of mesopores on the capacitor performance. [Pg.40]

The KOH-activated carbons give excellent capacitance values reaching ca. 300 F g 1 despite a rather moderate specific capacitance per surface area, being in the range of 7-11 pF cm 2. Apparently, this can be... [Pg.41]

This value of capacitance is well consistent with the experimental value of 192 F/g measured in a two-electrode cell. Hence, one must be extremely careful that the values of capacitance reported for ECPs in literature are generally obtained from three-electrode cell measurements. The above example shows clearly that in the case of a real two-electrode capacitor the capacitance values are always smaller than in a three-electrode cell configuration. [Pg.67]


See other pages where Capacitance values is mentioned: [Pg.735]    [Pg.838]    [Pg.839]    [Pg.840]    [Pg.841]    [Pg.841]    [Pg.49]    [Pg.239]    [Pg.633]    [Pg.635]    [Pg.635]    [Pg.636]    [Pg.636]    [Pg.152]    [Pg.172]    [Pg.174]    [Pg.26]    [Pg.28]    [Pg.35]    [Pg.36]    [Pg.37]    [Pg.40]    [Pg.40]    [Pg.42]    [Pg.57]    [Pg.59]    [Pg.66]    [Pg.71]    [Pg.72]    [Pg.73]   
See also in sourсe #XX -- [ Pg.378 , Pg.404 ]




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