Boron nitride thin films

Ronning C., Banks A. D., McCarson B. L. et al.. Structure and electronic properties of boron nitride thin films containing silicon, J. Appl. Phys., 84 (1998) pp. 5046-5051. 

Kester D. J., Messier R., Phase control of cubic boron nitride thin films. J. Appl. Phys., 12 ( 992) pp. 504-511. 

Tanabe N., Haysshi T., Iwaki M., Deposition of cubic boron nitride thin films by ion-beam-enhanced deposition, DiamondRelat. Mater., 1 (1992) pp. 883-890. 

Ronning C., Felderman H., Hofsass H., Growth, doping and applications of cubic boron nitride thin films, Diamond Relat. Mater., 9 (2000) pp. 1767-1773. 

Zhang, X.W. Yin, H. Boyen, H.-G. Ziemann, R Ozawa, M. 2005. Effects of crystalline quality on the phase stability of cubic boron nitride thin films under medium-energy ion irradiation. Diamond and Related Materials, 14(9) 1482-1488. 

The authors back up their model by experimental results. For instance they have varied the conditions for boron nitride thin film deposition which yielded different... 

Stenzel O, Hahn J, Roder M et al (1996) The optical constants of cubic and hexagonal boron nitride thin films and their relation to the bulk optical constants. Phys Status Solidi... 

Termoss, H., Toury, B., Brioude, A., Dazord, J., Le Brusq, J., Miele, R (2007). High purity boron nitride thin films prepared by the PDCs ronte. Surface and Coatings Technology, 207(18), 7822-7828. doi 10.1016/j.surfcoat.2007.03.016. 

Miyake, S., Tribology of Carbon Nitride and Boron Nitride Nanoperiod Multilayer Films and Its Application to Nanoscale Processing," Thin Solid Films,Wo. 493,2005, pp. 160-169. 

The multilayer nanocomposite films containing layers of quasi-spherical Fe nanoparticles (d — 5.8 nm) separated by dielectric layers from boron nitride (BN) are synthesized by the repeated alternating deposition of BN and Fe onto a silicon substrate [54]. In this work the authors managed to realize the correlation in the arrangement of Fe nanoparticles between the layers the thin BN layer deposited on the Fe layer has a wave-like relief, on which the disposition of Fe nanoparticles is imprinted as a result, the next Fe layer deposited onto BN reproduces the structure of the previous Fe layer. Thus, a three-dimensional ordered system of the nanoparticles has been formed on the basis of the initial ordered Fe nanoparticle layer deposited on silicon substrate [54]. The analogous three-dimensional structure composed of the Co nanoparticles layers, which alternate the layers of amorphous A1203, has been obtained by the PVD method [55]. 

While plasma-enhanced methods are very usefiil to lower the substrate temperature, the as-deposited films are typically less conformal and often contain more surface impurities than competing methods. In this method, reactive radicals, ions, and atoms/molecules are formed in the gas phase that interact with the relatively low-temperature substrate to generate a film. Some of the more recent applications for plasma CVD include growth of cubic boron nitride (c-BN) thin films. 

Numerous ceramics are deposited via chemical vapor deposition. Oxide, carbide, nitride, and boride films can all be produced from gas phase precursors. This section gives details on the production-scale reactions for materials that are widely produced. In addition, a survey of the latest research including novel precursors and chemical reactions is provided. The discussion begins with the mature technologies of silicon dioxide, aluminum oxide, and silicon nitride CVD. Then the focus turns to the deposition of thin films having characteristics that are attractive for future applications in microelectronics, micromachinery, and hard coatings for tools and parts. These materials include aluminum nitride, boron nitride, titanium nitride, titanium dioxide, silicon carbide, and mixed-metal oxides such as those of the perovskite structure and those used as high To superconductors. 

S. Koizumi, T. Murakami, T. Inuzuka, and K. Suzuki, Epitaxial growth of diamond thin films on cubic boron nitride (111) surfaces by DC plasma chemical vapor deposition, Appl. Pl s. Lett, 57(6) 563-565 (1990)... 

Many metal nitrides exhibit interesting properties such as extreme hardness, high melting points and resistance towards organic solvents and inorganic acids (Table 7-1). Several non-metallic nitrides also are of great interest. Among them, boron nitride and silicon nitride are of particular interest. The properties and preparation of these two compounds by CVD are described elsewhere (see Chapter 6). Most nitrides can be prepared by solid state reactions [142]. However, for the preparation of thin films, CVD is the method of choice. This section focuses on nitrides which have not been described in previous chapters. 

Ye, J., Oechsner, H. 2006. On the nucleation of the cubic phase in boron nitride films. Thin Solid Films 514 138-144. 

W. Gissler et al. Mixed phase nanocrystalline boron nitride films preparation and characterization. Thin Solid Films 1991, 199, 115. 

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