Asymmetric devices

As it was already described in Section 8.2.1, the total capacitance of a supercapacitor is given by Equation 8.1. In a symmetric capacitor with equal values of capacitance for the positive (Cj) and negative (f2) electrodes, the total capacitance of the system is half the capacitance of one electrode. In the asymmetric device, as the capacitance of the battery electrode is much higher than the capacitive one, the capacitance of the system approaches that of the electrode with the smallest value. In other words, the capacitance of the asymmetric configuration combining a battery-like electrode with a capacitive one will be close to the value of the capacitive electrode, i.e., twice larger than that for a symmetric configuration with two capacitive electrodes. 

Some other asymmetric devices have been proposed implying a LTO negative electrode and alternative positive electrode materials as (1) conducting polymers and (2) battery-like material/ activated carbon composites. 

This new device appears to combine the advantages of electrolytic capacitors (very long life time) and of lithium microbatteries (high energy densities). Furthermore, the component can be miniaturized. Use of an asymmetric device (one electrode is not polarizable, e.g. a metal layer) allows the capacity to increase, but the internal resistance is also increased and the life time is strongly reduced. 

Barium carbonate also reacts with titania to form barium titanate [12047-27-7] BaTiO, a ferroelectric material with a very high dielectric constant (see Ferroelectrics). Barium titanate is best manufactured as a single-phase composition by a soHd-state sintering technique. The asymmetrical perovskite stmcture of the titanate develops a potential difference when compressed in specific crystallographic directions, and vice versa. This material is most widely used for its strong piezoelectric characteristics in transducers for ultrasonic technical appHcations such as the emulsification of Hquids, mixing of powders and paints, and homogenization of milk, or in sonar devices (see Piezoelectrics Ultrasonics). 

This is a simple calculation to determine the maximum symmetrical fault level of a system, to select the type of equipment, devices and bus system etc. But to decide on a realistic protective scheme, the asymmetrical value of the fault current must be estimated by including all the likely impedances of the circuit. 

The hole current in this LED is space charge limited and the electron current is contact limited. There are many more holes than electrons in the device and all of the injected electrons recombine in the device. The measured external quantum efficiency of the device is about 0.5% al a current density of 0.1 A/cm. The recombination current calculated from the device model is in reasonable agreement with the observed quantum efficiency. The quantum efficiency of this device is limited by the asymmetric charge injection. Most of the injected holes traverse the structure without recombining because there are few electrons available to form excilons. 

The simplest and most widely used model to explain the response of organic photovoltaic devices under illumination is a metal-insulaior-metal (MIM) tunnel diode [55] with asymmetrical work-function metal electrodes (see Fig. 15-10). In forward bias, holes from the high work-function metal and electrons from the low work-function metal are injected into the organic semiconductor thin film. Because of the asymmetry of the work-functions for the two different metals, forward bias currents are orders of magnitude larger than reverse bias currents at low voltages. The expansion of the current transport model described above to a carrier generation term was not taken into account until now. 

MIM or SIM [82-84] diodes to the PPV/A1 interface provides a good qualitative understanding of the device operation in terms of Schottky diodes for high impurity densities (typically 2> 1017 cm-3) and rigid band diodes for low impurity densities (typically<1017 cm-3). Figure 15-14a and b schematically show the two models for the different impurity concentrations. However, these models do not allow a quantitative description of the open circuit voltage or the spectral resolved photocurrent spectrum. The transport properties of single-layer polymer diodes with asymmetric metal electrodes are well described by the double-carrier current flow equation (Eq. (15.4)) where the holes show a field dependent mobility and the electrons of the holes show a temperature-dependent trap distribution. 

The purpose of this work is to demonstrate that the techniques of quantum control, which were developed originally to study atoms and molecules, can be applied to the solid state. Previous work considered a simple example, the asymmetric double quantum well (ADQW). Results for this system showed that both the wave paeket dynamics and the THz emission can be controlled with simple, experimentally feasible laser pulses. This work extends the previous results to superlattices and chirped superlattices. These systems are considerably more complicated, because their dynamic phase space is much larger. They also have potential applications as solid-state devices, such as ultrafast switches or detectors. 

The presented results show that the simple asymmetric pattern caused directional deformations and transport of a droplet. This technique is applicable to generation of a flow in microfluidic devices. 

JR Cardinal, SM Herbig, RW Korsmeyer, J Lo, KL Smith, AG Thombre. Asymmetric membranes in delivery devices. US Patent 5,698,220, 1997. 

In the third paper by French and Ukrainian scientists (Khomenko et al.), the authors focus on high performance a-MnCVcarbon nanotube composites as pseudo-capacitor materials. Somewhat surprisingly, this paper teaches to use carbon nanotubes for the role of conductive additives, thus suggesting an alternative to the carbon blacks and graphite materials - low cost, widely accepted conductive diluents, which are typically used in todays supercapacitors. The electrochemical devices used in the report are full symmetric and optimized asymmetric systems, and are discussed here... 

Recently, Chen s group reported a deep blue OLED based on an asymmetric mono(styryl) amine derivative DB1 (192) as shown in Scheme 3.59. PL spectra of this deep blue dopant in toluene solution showed a peak emission of 438 nm, which is about 20 nm hypsochromic shift compared with DSA-amine symmetric dopant, due to the shorter chromophoric conjugated length of the mono(styryl) amine. OLED device based on this blue dopant achieved a very high efficiency of 5.4 cd/A, with CIE coordinates of (0.14, 0.13) [234]. 

A second problem that has repeatedly concerned us is the inability of the Sequence Rule to provide descriptors for some elements of stereoisomerism. When Cahn et al. (16) first encountered this problem with the all-cis and all-trans isomers of inositol, they attributed it to the fact that the symmetry has become so high that they have no asymmetric, nor even a pseudo-asymmetric atom. This interpretation, we believe, is incorrect. If the two ring ligands of any carbon atom of m-inositol were not heteromorphic, their exchange could not yield an isomer, as it clearly does. Each atom is a center of stereoisomerism with a pair of enantiomorphic ligands (Cg+g hi) and indistinguishable from the traditional pseudoasymmetric atom. The description of cu-inositol as all-5 could be accomplished by the same device that would allow one to specify the configurations of C(l) and C(4) of 4-methylcyclohexanol. 

In reflection, the intensity of the X-ray wavefield inside the crystal falls off very rapidly away from the surface, due to transfer of energy to the diffracted beam. Absorption also becomes important at low incident angles to the surface. By choosing the radiation and the reflection (inclnding its symmetry), the penetration may be varied between about 0.05 and 10 micrometres. This is ideally matched to device stmctures. This is quantified by the extinction distance g, defined as the depth at which the incident intensity has decreased to 1/e of its value at the surface. This may be calculated from diffraction theory, and some examples, for GaAs with CuK radiation, are shown in Table 3.2. It is assumed that the wafer surface is (001), hence the 004 reflection is symmetric and the others asymmetric. 

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