Application of Optoelectronic Properties

Cathodoluminescence microscopy and spectroscopy techniques are powerful tools for analyzing the spatial uniformity of stresses in mismatched heterostructures, such as GaAs/Si and GaAs/InP. The stresses in such systems are due to the difference in thermal expansion coefficients between the epitaxial layer and the substrate. The presence of stress in the epitaxial layer leads to the modification of the band structure, and thus affects its electronic properties it also can cause the migration of dislocations, which may lead to the degradation of optoelectronic devices based on such mismatched heterostructures. This application employs low-temperature (preferably liquid-helium) CL microscopy and spectroscopy in conjunction with the known behavior of the optical transitions in the presence of stress to analyze the spatial uniformity of stress in GaAs epitaxial layers. This analysis can reveal,... 

XPS has been used in almost every area in which the properties of surfaces are important. The most prominent areas can be deduced from conferences on surface analysis, especially from ECASIA, which is held every two years. These areas are adhesion, biomaterials, catalysis, ceramics and glasses, corrosion, environmental problems, magnetic materials, metals, micro- and optoelectronics, nanomaterials, polymers and composite materials, superconductors, thin films and coatings, and tribology and wear. The contributions to these conferences are also representative of actual surface-analytical problems and studies [2.33 a,b]. A few examples from the areas mentioned above are given below more comprehensive discussions of the applications of XPS are given elsewhere [1.1,1.3-1.9, 2.34—2.39]. 

The many possible combinations of II-V and II-VI compounds allow the tailoring of electronic and opto-electronic properties to suit specific applications. Of particular importance is the control of the stoichiometry of the element involved. This is achieved by the proper handling of the MOCVD reactions. Being able to tailor the bandgap imparts great flexibility in the design of transistors and optoelectronic devices. 

The m-V and II-VI semiconductor compounds have excellent optical properties and are the most important group of optoelectronic materials, which are all produced by CVD for many optoelectronic applications. The properties of these materials and their CVD reactions are reviewed in Ch. 12, Secs. 3.0 and 4.0 and Ch. 13, Sec. 6.0. It is possible to tailor the bandgap, by the proper combination of these materials, to suit any given application (See Fig. 13.2 of Ch. 13). 

High-Temperature Crystallization The size-tunable optical and electronic properties of semiconductor nanocrystals are attractive for a variety of optoelectronic applications. In solution-phase crystallization, precursors undergo chemical reaction to form nuclei, and particle growth is arrested with capping ligands that... 

The silver white, shiny, metal-like semiconductor is considered a semimetal. The atomic weight is greater than that of the following neighbor (iodine), because tellurium isotopes are neutron-rich (compare Ar/K). Its main use is in alloys, as the addition of small amounts considerably improves properties such as hardness and corrosion resistance. New applications of tellurium include optoelectronics (lasers), electrical resistors, thermoelectric elements (a current gives rise to a temperature gradient), photocopier drums, infrared cameras, and solar cells. Tellurium accelerates the vulcanization of rubber. 

The last of the lanthanides, this metal is also the hardest and the densest of them. It is a component of cerium mischmetal. Lutetium has some applications in optoelectronics. Shows great similarities to ytterbium. Its discoverer, Georges Urbain, carried out 15 000 fractional crystallizations to isolate pure lutetium (record ). The element has special catalytic properties (oil industry). 176Lu is generated artificially and is a good beta emitter (research purposes). 177Lu has a half-life of six days and is used in nuclear medicine. 

There is another class of amorphous semiconductors based on chalcogens which predate the developments that have occurred in J-Si. Because their use has been limited, eg, to switching types of devices and optical memories, this discussion is restricted to the optoelectronic properties of tf-Si-based alloys and their role in some applications. 

Nowadays, polymeric photoconductors may be used in electrophotography, microfilms, photothermoplastic recording, spatial light modulators, and nonlinear elements. The combination of photosensitivity with high quality electrical and mechanical properties permits the use of such materials in optoelectronics, holography, laser recording and information processes. The applications of the various types of polymers were reported in the final parts of the relevant items in the earlier sections. Here, we will briefly analyze the common features of photoconductive polymer applications. The separate questions of each type have been dealt with in some books and papers [3, 11, 14, 329]. 

The ease of orientation of l-l.c. s in the electric and magnetic field and their response in optical properties are widely investigated in view of theoretical aspects and technological application. This is reflected in numerous reviews and articles65 Especially the technological application of I.c. s for display devices in optoelectronics pushed forward the development of I.c. s. By measuring electric and magnetic field effects powerful methods exist, to characterize the elastic and viscous behavior of I.c. s. 

Polysilane high polymers possessing fully saturated all-silicon backbone have attracted remarkable attention recently because of their unique optoelectronic properties and their importance in possible applications as photoresists, photoconductors, polymerization initiators, nonlinear optical materials etc. A number of review articles have been published on this topic4-9. The studies in this field have stimulated both experimental and theoretical chemists to elaborate on understanding the excited state nature of polysilanes and oligosilanes and of their mechanistic photochemistry. 

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